KR100949109B1 - 반도체 장치 및 그 제조 방법 - Google Patents
반도체 장치 및 그 제조 방법 Download PDFInfo
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- KR100949109B1 KR100949109B1 KR1020080020891A KR20080020891A KR100949109B1 KR 100949109 B1 KR100949109 B1 KR 100949109B1 KR 1020080020891 A KR1020080020891 A KR 1020080020891A KR 20080020891 A KR20080020891 A KR 20080020891A KR 100949109 B1 KR100949109 B1 KR 100949109B1
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- conductive oxide
- oxide layer
- ferroelectric
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- 239000004065 semiconductor Substances 0.000 title claims description 76
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- 239000003990 capacitor Substances 0.000 claims abstract description 125
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- 239000012298 atmosphere Substances 0.000 claims description 31
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 31
- 239000001301 oxygen Substances 0.000 claims description 31
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- VRIVJOXICYMTAG-IYEMJOQQSA-L iron(ii) gluconate Chemical compound [Fe+2].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O VRIVJOXICYMTAG-IYEMJOQQSA-L 0.000 description 18
- 238000005229 chemical vapour deposition Methods 0.000 description 17
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 14
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- 230000004888 barrier function Effects 0.000 description 9
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- 229910010037 TiAlN Inorganic materials 0.000 description 8
- 229910000457 iridium oxide Inorganic materials 0.000 description 8
- 238000002955 isolation Methods 0.000 description 8
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- 238000012545 processing Methods 0.000 description 8
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- 230000008021 deposition Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 229910052707 ruthenium Inorganic materials 0.000 description 7
- 229910052719 titanium Inorganic materials 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000012528 membrane Substances 0.000 description 6
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 6
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
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- 150000001875 compounds Chemical class 0.000 description 4
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- 238000005468 ion implantation Methods 0.000 description 4
- 229910052745 lead Inorganic materials 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 125000004430 oxygen atom Chemical group O* 0.000 description 4
- 238000009832 plasma treatment Methods 0.000 description 4
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- 229910052726 zirconium Inorganic materials 0.000 description 4
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- 229910004121 SrRuO Inorganic materials 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
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- 238000006731 degradation reaction Methods 0.000 description 3
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- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 3
- 239000013081 microcrystal Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 229910052762 osmium Inorganic materials 0.000 description 3
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 3
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- 239000010970 precious metal Substances 0.000 description 3
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- 229910052702 rhenium Inorganic materials 0.000 description 3
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 3
- 229910052703 rhodium Inorganic materials 0.000 description 3
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000003980 solgel method Methods 0.000 description 3
- 229910052712 strontium Inorganic materials 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
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- JFWLFXVBLPDVDZ-UHFFFAOYSA-N [Ru]=O.[Sr] Chemical compound [Ru]=O.[Sr] JFWLFXVBLPDVDZ-UHFFFAOYSA-N 0.000 description 2
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- 238000004458 analytical method Methods 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
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- JIWAALDUIFCBLV-UHFFFAOYSA-N oxoosmium Chemical compound [Os]=O JIWAALDUIFCBLV-UHFFFAOYSA-N 0.000 description 2
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- SJLOMQIUPFZJAN-UHFFFAOYSA-N oxorhodium Chemical compound [Rh]=O SJLOMQIUPFZJAN-UHFFFAOYSA-N 0.000 description 2
- 229910003445 palladium oxide Inorganic materials 0.000 description 2
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- 229910003450 rhodium oxide Inorganic materials 0.000 description 2
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 2
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 2
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- 239000010937 tungsten Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910019897 RuOx Inorganic materials 0.000 description 1
- -1 SrBi 2 (Ta Chemical class 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000000274 adsorptive effect Effects 0.000 description 1
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- 229910052791 calcium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
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- 230000000593 degrading effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
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- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
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- 230000008016 vaporization Effects 0.000 description 1
- 239000006200 vaporizer Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/65—Electrodes comprising a noble metal or a noble metal oxide, e.g. platinum (Pt), ruthenium (Ru), ruthenium dioxide (RuO2), iridium (Ir), iridium dioxide (IrO2)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
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- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
도전성 산화막 | 성막온도 | 성막가스 Ar:O2(Sccm) | HRBS 결과 x(IrOx) |
IrOx | 20℃ | 100:52 | 1.20 |
IrOx | 20℃ | 100:59 | 1.50 |
IrOx | 300℃ | 140:60 | 1.92 |
IrOy | 20℃ | 100:100 | 2.10 |
IrOy | 60℃ | 100:100 | 2.10 |
IrOz | 300℃ | 120:80 | 2.02 |
IrOz | 300℃ | 110:90 | 2.04 |
Claims (10)
- 반도체 기판과,상기 반도체 기판의 상방에 형성되고, 상부 전극과 하부 전극 사이에 커패시터막이 삽입되어 이루어지는 커패시터 구조를 포함하고,상기 상부 전극은 M1, M2, M3을 각각 1개 또는 복수의 금속 원소로서,화학량론 조성이 조성 파라미터(x1)를 사용하여 화학식 M1Ox1로 표시되고, 실제의 조성이 조성 파라미터(x2)를 사용하여 화학식 M1Ox2로 표시되는 산화물로 이루어지는 제 1 층과,상기 제 1 층 위에 형성되어 있고, 화학량론 조성이 조성 파라미터(y1)를 사용하여 화학식 M2Oy1로 표시되고, 실제의 조성이 조성 파라미터(y2)를 사용하여 화학식 M2Oy2로 표시되는 산화물로 이루어지는 제 2 층과,상기 제 2 층 위에 형성되어 있고, 화학량론 조성이 조성 파라미터(z1)를 사용하여 화학식 M3Oz1로 표시되고, 실제의 조성이 조성 파라미터(z2)를 사용하여 화학식 M3Oz2로 표시되는 산화물로 이루어지는 제 3 층을 갖고 구성되어 있고,상기 제 2 층은, 상기 제 1 층 및 상기 제 3 층보다도 산화의 비율이 높게 구성되어, 상기 조성 파라미터 x1, x2, y1, y2, z1 및 z2의 사이에는,y2/y1>x2/x1, y2/y1>z2/z1 및 z2/z1≥x2/x1의 관계가 성립하는 것을 특징으로 하는 반도체 장치.
- 제 1 항에 있어서,상기 상부 전극은, 상기 제 3 층 위에 형성되어 있고, 귀금속 또는 귀금속을 포함하는 합금으로 이루어지는 제 4 층을 더 갖는 것을 특징으로 하는 반도체 장치.
- 제 1 항 또는 제 2 항에 있어서,상기 제 3 층의 막두께는, 상기 제 2 층의 막두께보다도 얇은 50nm 이하인 것을 특징으로 하는 반도체 장치.
- 제 1 항 또는 제 2 항에 있어서,상기 제 1 층의 결정 입경(粒徑)은 상기 제 2 층의 결정 입경보다도 작은 것을 특징으로 하는 반도체 장치.
- 제 1 항 또는 제 2 항에 있어서,상기 제 3 층의 결정 입경은 상기 제 2 층의 결정 입경보다도 작은 것을 특징으로 하는 반도체 장치.
- 제 1 항 또는 제 2 항에 있어서,상기 커패시터막은 강유전체막인 것을 특징으로 하는 반도체 장치.
- 커패시터 구조를 갖는 반도체 장치의 제조 방법으로서,반도체 기판의 상방에, 상기 커패시터 구조의 하부 전극을 형성하는 공정과,상기 하부 전극 위에 커패시터막을 형성하는 공정과,상기 커패시터막 위에, 적어도, 제 1 도전성 산화층, 제 2 도전성 산화층 및 제 3 도전성 산화층을 순차적으로 적층하여, 상부 전극을 형성하는 공정을 포함하고,상기 제 1 도전성 산화층 및 상기 제 3 도전성 산화층의 형성 공정을, 상기 제 2 도전성 산화층의 퇴적 공정보다도, 산화의 비율이 낮은 조건하에서 실행하는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제 7 항에 있어서,상기 제 2 도전성 산화층을 퇴적하는 공정 후에, 상기 제 2 도전성 산화층을, 산소를 포함하는 분위기 중에서 제 3 온도로 열처리하는 공정을 포함하는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제 7 항 또는 제 8 항에 있어서,상기 제 2 도전성 산화층을, 30℃ 이상 90℃ 이하의 범위 내의 온도에서 성막하는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제 7 항 또는 제 8 항에 있어서,상기 커패시터막은 강유전체막인 것을 특징으로 하는 반도체 장치의 제조 방법.
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JP5593935B2 (ja) | 2010-08-04 | 2014-09-24 | 富士通セミコンダクター株式会社 | 強誘電体キャパシタの製造方法及び強誘電体キャパシタ |
EP2617076B1 (en) * | 2010-09-15 | 2014-12-10 | Ricoh Company, Limited | Electromechanical transducing device and manufacturing method thereof |
US10003081B2 (en) * | 2010-10-26 | 2018-06-19 | Ford Global Technologies, Llc | Catalyst assembly and method of making the same |
US9640802B2 (en) * | 2010-10-26 | 2017-05-02 | Ford Global Technologies, Llc | Catalyst assembly and method of making the same |
US8395196B2 (en) | 2010-11-16 | 2013-03-12 | International Business Machines Corporation | Hydrogen barrier liner for ferro-electric random access memory (FRAM) chip |
KR20140048654A (ko) | 2012-10-16 | 2014-04-24 | 삼성전자주식회사 | 반도체 소자 |
US9276057B2 (en) * | 2014-01-27 | 2016-03-01 | United Microelectronics Corp. | Capacitor structure and method of manufacturing the same |
JP6751866B2 (ja) * | 2016-04-22 | 2020-09-09 | 国立研究開発法人産業技術総合研究所 | 半導体強誘電体記憶素子の製造方法及び半導体強誘電体記憶トランジスタ |
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