KR100973703B1 - 반도체 장치 및 그 제조 방법 - Google Patents
반도체 장치 및 그 제조 방법 Download PDFInfo
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- KR100973703B1 KR100973703B1 KR1020077027352A KR20077027352A KR100973703B1 KR 100973703 B1 KR100973703 B1 KR 100973703B1 KR 1020077027352 A KR1020077027352 A KR 1020077027352A KR 20077027352 A KR20077027352 A KR 20077027352A KR 100973703 B1 KR100973703 B1 KR 100973703B1
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- interlayer insulating
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 40
- 238000000034 method Methods 0.000 title claims description 96
- 238000004519 manufacturing process Methods 0.000 title claims description 34
- 230000004888 barrier function Effects 0.000 claims abstract description 130
- 239000003990 capacitor Substances 0.000 claims abstract description 89
- 239000011229 interlayer Substances 0.000 claims abstract description 77
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- 238000010438 heat treatment Methods 0.000 claims description 43
- 239000010410 layer Substances 0.000 claims description 41
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 40
- 239000001257 hydrogen Substances 0.000 claims description 40
- 229910052739 hydrogen Inorganic materials 0.000 claims description 40
- 238000009792 diffusion process Methods 0.000 claims description 25
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 14
- 230000015654 memory Effects 0.000 abstract description 50
- 229910052814 silicon oxide Inorganic materials 0.000 description 82
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 78
- 239000007789 gas Substances 0.000 description 61
- 239000010936 titanium Substances 0.000 description 39
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 38
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- 238000005229 chemical vapour deposition Methods 0.000 description 21
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- 229910003446 platinum oxide Inorganic materials 0.000 description 6
- 230000010287 polarization Effects 0.000 description 6
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- 238000000059 patterning Methods 0.000 description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 5
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 4
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- 230000005856 abnormality Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
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- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
- H01L28/57—Capacitors with a dielectric comprising a perovskite structure material comprising a barrier layer to prevent diffusion of hydrogen or oxygen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/65—Electrodes comprising a noble metal or a noble metal oxide, e.g. platinum (Pt), ruthenium (Ru), ruthenium dioxide (RuO2), iridium (Ir), iridium dioxide (IrO2)
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (20)
- 반도체 기판의 위쪽에 형성된 복수개의 강유전체 커패시터와,상기 강유전체 커패시터를 직접 덮어, 수소 또는 물의 확산을 방지하는 제1 배리어막과,상기 제1 배리어막 위에 형성된 층간 절연막과,상기 층간 절연막 위에 형성되어, 상기 강유전체 커패시터에 접속된 배선을 갖고,상기 층간 절연막은 상기 복수개의 강유전체 커패시터 중의 적어도 1개를 위쪽 및 옆쪽으로부터 덮어, 수소 또는 물의 확산을 방지하는 1 또는 2이상의 제2 배리어막을 포함하고,상기 제1 배리어막이 강유전체막의 측면 및 상면을 직접 덮고,상기 1 또는 2이상의 제2 배리어막이 상기 복수개의 강유전체 커패시터를 공통으로 덮는 것을 특징으로 하는 반도체 장치.
- 제1항에 있어서,상기 제2 배리어막은 상기 복수개의 강유전체 커패시터 사이에 위치하는 경사부를 갖고,상기 경사부와 상기 반도체 기판의 표면이 이루는 각도는 60˚ 이하인 것을 특징으로 하는 반도체 장치.
- 제1항에 있어서,상기 제2 배리어막은 상기 강유전체 커패시터의 위쪽에 위치하는 평탄부를 갖는 것을 특징으로 하는 반도체 장치.
- 제1항에 있어서,상기 배선은 복수의 배선층에 걸쳐 형성되고,상기 배선층간에는, 수소 또는 물의 확산을 방지하는 하나 이상의 제3 배리어막이 형성되어 있는 것을 특징으로 하는 반도체 장치.
- 반도체 기판의 위쪽에 복수개의 강유전체 커패시터를 형성하는 공정과,상기 복수개의 강유전체 커패시터를 직접 덮어, 수소 또는 물의 확산을 방지하는 제1 배리어막을 형성하는 공정과,상기 제1 배리어막 위에 층간 절연막을 형성하는 공정과,상기 층간 절연막 위에, 상기 복수개의 강유전체 커패시터에 접속되는 배선을 형성하는 공정을 갖고,상기 제1 배리어막이 강유전체막의 측면 및 상면을 직접 덮고,상기 층간 절연막을 형성하는 공정은, 상기 복수개의 강유전체 커패시터 중의 적어도 1개를 위쪽 및 옆쪽으로부터 덮어, 수소 또는 물의 확산을 방지하는 1 또는 2이상의 제2 배리어막을 형성함으로써, 상기 1 또는 2이상의 제2 배리어막에, 상기 복수개의 강유전체 커패시터를 공통으로 덮는 공정을 갖는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제5항에 있어서,상기 층간 절연막을 형성하는 공정은,상기 제1 배리어막 위에 제1 절연막을 형성하는 공정과,상기 제1 절연막을 평탄화하는 공정과,상기 제1 절연막에 1 또는 2이상의 홈을, 당해 1 또는 2이상의 홈에 의해 상기 복수개의 강유전체 커패시터의 모두가 둘러싸이도록 형성하는 공정과,상기 절연막 위 및 상기 홈의 내부에 상기 제2 배리어막을 형성하는 공정을 갖는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제6항에 있어서,상기 홈의 측면과 상기 반도체 기판의 표면이 이루는 각도를 60˚ 이하로 하는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제6항에 있어서,상기 홈을 형성하는 공정과 상기 제2 배리어막을 형성하는 공정 사이에, 열처리를 실시하는 공정을 갖는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제8항에 있어서,상기 열처리를, 적어도 N2O를 사용하여 발생시킨 플라즈마 분위기 중에서 행하는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제5항에 있어서,상기 배선을 복수의 배선층에 걸쳐 형성하고,상기 배선층간에는, 수소 또는 물의 확산을 방지하는 하나 이상의 제3 배리어막을 형성하는 공정을 갖는 것을 특징으로 하는 반도체 장치의 제조 방법.
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Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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PCT/JP2005/011143 WO2006134664A1 (ja) | 2005-06-17 | 2005-06-17 | 半導体装置及びその製造方法 |
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KR20080007381A KR20080007381A (ko) | 2008-01-18 |
KR100973703B1 true KR100973703B1 (ko) | 2010-08-04 |
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EP2267758B1 (en) * | 2005-06-02 | 2015-09-09 | Fujitsu Semiconductor Limited | Method for manufacturing a ferroelectric memory |
CN101322241A (zh) * | 2005-11-29 | 2008-12-10 | 富士通株式会社 | 半导体器件及其制造方法 |
JP5109391B2 (ja) * | 2007-02-08 | 2012-12-26 | 富士通セミコンダクター株式会社 | 半導体装置およびその製造方法 |
WO2008102438A1 (ja) * | 2007-02-21 | 2008-08-28 | Fujitsu Microelectronics Limited | 半導体装置及びその製造方法 |
CN101617399B (zh) * | 2007-02-27 | 2011-05-18 | 富士通半导体股份有限公司 | 半导体存储器件及其制造、测试方法、封装树脂形成方法 |
JP2008294194A (ja) | 2007-05-24 | 2008-12-04 | Seiko Epson Corp | 強誘電体キャパシタの製造方法及び強誘電体キャパシタ |
US20110079878A1 (en) * | 2009-10-07 | 2011-04-07 | Texas Instruments Incorporated | Ferroelectric capacitor encapsulated with a hydrogen barrier |
JP5771900B2 (ja) * | 2010-03-26 | 2015-09-02 | セイコーエプソン株式会社 | 熱型光検出器、熱型光検出装置及び電子機器 |
KR102434434B1 (ko) * | 2016-03-03 | 2022-08-19 | 삼성전자주식회사 | 반도체 소자 |
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JP2004349474A (ja) | 2003-05-22 | 2004-12-09 | Toshiba Corp | 半導体装置とその製造方法 |
JP2005116756A (ja) | 2003-10-07 | 2005-04-28 | Fujitsu Ltd | 半導体装置及びその製造方法 |
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JPH09293869A (ja) | 1996-04-25 | 1997-11-11 | Nec Corp | 半導体装置およびその製造方法 |
JP2001210798A (ja) | 1999-12-22 | 2001-08-03 | Texas Instr Inc <Ti> | コンデンサ構造の保護のための絶縁性と導電性の障壁の使用 |
JP4428500B2 (ja) * | 2001-07-13 | 2010-03-10 | 富士通マイクロエレクトロニクス株式会社 | 容量素子及びその製造方法 |
JP3962296B2 (ja) | 2001-09-27 | 2007-08-22 | 松下電器産業株式会社 | 強誘電体メモリ装置及びその製造方法 |
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JP2003115545A (ja) | 2001-10-04 | 2003-04-18 | Sony Corp | 誘電体キャパシタおよびその製造方法 |
JP2004095861A (ja) * | 2002-08-30 | 2004-03-25 | Fujitsu Ltd | 半導体装置及びその製造方法 |
JP3621087B1 (ja) * | 2002-11-13 | 2005-02-16 | 松下電器産業株式会社 | 半導体装置及びその製造方法 |
US6943398B2 (en) | 2002-11-13 | 2005-09-13 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method for fabricating the same |
CN1525553A (zh) | 2003-02-26 | 2004-09-01 | ���µ�����ҵ��ʽ���� | 半导体装置的制造方法 |
JP3991035B2 (ja) * | 2003-02-26 | 2007-10-17 | 松下電器産業株式会社 | 半導体装置の製造方法 |
JP2004303996A (ja) * | 2003-03-31 | 2004-10-28 | Seiko Epson Corp | 強誘電体メモリ素子およびその製造方法 |
JP2005166920A (ja) * | 2003-12-02 | 2005-06-23 | Matsushita Electric Ind Co Ltd | 半導体装置 |
JP4025316B2 (ja) * | 2004-06-09 | 2007-12-19 | 株式会社東芝 | 半導体装置の製造方法 |
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JP4042730B2 (ja) * | 2004-09-02 | 2008-02-06 | セイコーエプソン株式会社 | 強誘電体メモリおよびその製造方法 |
KR200442869Y1 (ko) | 2007-01-30 | 2008-12-17 | 한대승 | 다기능 리튬 이온 충전기 |
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KR20040042869A (ko) * | 2002-11-13 | 2004-05-20 | 마츠시타 덴끼 산교 가부시키가이샤 | 반도체장치 및 그 제조방법 |
JP2004349474A (ja) | 2003-05-22 | 2004-12-09 | Toshiba Corp | 半導体装置とその製造方法 |
JP2005116756A (ja) | 2003-10-07 | 2005-04-28 | Fujitsu Ltd | 半導体装置及びその製造方法 |
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CN101203953A (zh) | 2008-06-18 |
CN101203953B (zh) | 2012-04-04 |
JP4930371B2 (ja) | 2012-05-16 |
US20080105911A1 (en) | 2008-05-08 |
JPWO2006134664A1 (ja) | 2009-01-08 |
WO2006134664A1 (ja) | 2006-12-21 |
US7910968B2 (en) | 2011-03-22 |
KR20080007381A (ko) | 2008-01-18 |
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