TW432119B - Method for manufacturing thin film using atomic layer deposition - Google Patents

Method for manufacturing thin film using atomic layer deposition Download PDF

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Publication number
TW432119B
TW432119B TW087119573A TW87119573A TW432119B TW 432119 B TW432119 B TW 432119B TW 087119573 A TW087119573 A TW 087119573A TW 87119573 A TW87119573 A TW 87119573A TW 432119 B TW432119 B TW 432119B
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Taiwan
Prior art keywords
transformer
reactant
plate
bottom plate
circuit board
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TW087119573A
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English (en)
Inventor
Yeong-Kwan Kim
Sang-In Lee
Chang-Soo Park
Sang-Min Lee
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Samsung Electronics Co Ltd
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    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/45561—Gas plumbing upstream of the reaction chamber
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Description

M432119 接的方式係如料八_心其絕緣距 線％，拉長再連接於電路板"，，，才能人側接 然而，延種連接方式，在變壓器與二次側 =r存在，形成了空間上的浪費，在裝置或 化的趨勢下’這樣的空間浪f是極為可惜的，因此本案提出— 個可以縮小這樣的空·費而仍可符合安全規範的技術。 【新型内容】 本創作之主要目的在於提供一種變壓器承座，其可節省々 緣空間並仍可符合絕緣的安全規範。 巴 ▲為了達成前述目的’依據本創作所提供之—種變壓器承 座’包含有：一底板，係絕緣材質；一立板，係絕緣材質°，由 =板之邊緣向上延伸而成，該立板至少具有—後部，該後部 對應位於該底板之後側；其令，該底板係用以置於一電路板或 ，子设備上，且該底板係用以供—變壓器置放；在置放—變壓 3該底板時’該變壓器之一次側接線位於該底板前側，該變 塗裔之二次側接線係包覆有絕緣材，而攸過該立板的後部頂緣 ，向下延伸而連接於該電路板或電子設備。藉此，可以達到節 瘤絕緣空間並可符合絕緣的安全規範。 【實施方式】 為了詳細說明本創作之構造及特點所在，茲舉以下之較佳 實施例並配合圖式說明如後，其中： 如第圖至第二圖所示，本創作第一較佳實施例所提供之 M432119 一種變壓器承座10，主要具有： 一底板11，係絕緣材質。 立板15，係絕緣材質，與該底板U 一體成型， 底板11之邊緣向上延伸而成，該立板15具有二側部Μ 後。P 18側部16分別位於該底板u之兩側，該 18對應位於該底板11之後側且呈弧狀。 ° °亥底板11係用以置於—電路板99(錢子設備)上，且該 底板11係用以供—變壓器91置放；在置放-變壓器91於^ 底板11時，該變壓器91之-次側接線92位於該變壓器^ 且位於該底板n _，雜_ 91之二次難線94(為 條接線)係包I：有絕騎，而鹤該立板丨5的後部18頂 向下延伸而連接於該電路板99。
於本第實&例中，該底板u前緣至後緣的距離U 大於該變壓器二次側接線94由該變壓器91之二次側接線％ 起點至該立板後部18的雜L1加上該二讀躲94由
後部18頂緣向下延伸至連接於該電路板99的距離： L3>L1+L2。 J 接下來說明本第一實施例之使用狀態。 請再參閱第三圖，藉由L3>L1+L2的關係，可知只要調整 好L1+L2的長度即可符合較長絕緣距離的規範，而不需再去 顧慮L3的長度。因此’本創作藉由該立才反15與該底板η的 一體成型，以及該立板15的設置方式，可確立u、u及U 之間的_ ’並可讓該魏H9H摘接線94攸過該立板 15，並再向下延伸而連接於該電路板99上的接點，進而形成 5 M432119 所需要的絕緣距離，不需如同習知技術般的需要在電路板99 上保留相當空間，因此不會有空間上的浪費，而仍可符合安全 規範。 值得一提的是’第三圖中所顯示的L3>L1+L2的關係，亦 可依需要而改成為L3<L1+L2的關係，例如，若該立板的高度 較尚而使仔L2增加至L1+L2的距離大於L3，則此時只要調整 好L3的長度即可符合較長絕緣距離的規範，而不需要再去顧 慮L1+L2的長度。 凊再參閱第四圖至第七圖，本創作第二較佳實施例所提供 之一種變壓器承座20 ’主要概同於前揭第一實施例，不同之處 在於： 該立板25的後部28係呈直板狀，該底板 的形狀係對應於該立板25之後部28 該底板2!之後側具有一擋部211，在該變壓器91置於訪 j板21上時，係擋止於該變壓器91之骨架％，藉以使該變歷 ㈣與該立板25分隔於一預定距離，可藉此確保^之距離。 該立板25的後部28頂緣係設有複數凹槽28卜該變壓哭 二次側接線94係通過凹槽281，並受到料哺观的: 位。於本實施例中係以設置複數凹槽為例，然 該變壓器二次側接線94產生 槽的數篁可為至少一個，亦可為複數個。 〇凹 該立板後㈣之相τ緣設 壓器二_線94 _立板25的_ 28^^282’« 而連接於料二次顯點282 _ S向下延伸 282，亚再猎由該等二次側接點282 M432119 連接於該電路板99(戒電子設備）。藉此，該等二次側接點282 . 即可提供與電路板99之間的方便連接的功效。 該立板25之二側部26前緣分別具有—扣持部261，且唁 底板21之前緣係具有二扣持部212，該立板25之扣持部26j 以及該底板21之扣持部212均係扣持於變壓器91之骨架％， 並保持該變壓器91之骨架96抵於該擋部211。其中，竽底板 21之扣持部212數量為一個時亦可以有扣持的功能，並不以兩 • 個為限。 該立板25更設有二壓制部251，在該變壓器91置於該底 板21時，該變壓器91之骨架96即受到該二壓制部251的壓 制。 本第二實施例中，在該變壓器91置於該底板21上時，會 X到該擋部211所擋止，且會受到該二壓制部251的壓制，並 且還會受到該立板25之扣持部261以該底板21之扣持部212 所扣持而抵住該擋部2U，藉此可將該變壓器91牢牢地固定於 • 該底板21上，並且藉由該擋部211來確保Li的距離。、 本弟一實細•例之其餘結構及所能達成的功效均概同於前 揭第一實施例，容不贅述。 5月再參閱第八圖，本創作第三較佳實施例所提供之一種變 壓器承座30，主要概同於前揭第二實施例，不同之處在於： 該立板35之後部38外側面具有複數導線框383，該變壓 為一次側接線（圖中未示)係穿過該等導線框383。藉此，該等 導線框383可對該變壓器二次側接線形成約束的效果。 本第一貫知1例之其餘結構及所此達成的功效均概同於前 7 Μό21\9 揭第二實施例，容不贅述。 。月再參閱第九圖至第十圖，本創作第四較佳實施例所提供 之-種變壓器承座40，主要概同於前揭第—實施例，不同之處 在於： 更包含有一蓋板49’該蓋板49與該立板45係一體成形， 蓋板49係覆蓋該立板45所圍合的區域。 。玄立板45、该蓋板49與該底板41聯合形成一容置空間 R，並於前側形成一開口 〇，該變壓器91係可由該開口 〇置 入該容置空間R内。 »亥憂壓器91二次侧接線94係由該容置空間r内向外延 2，繞過該蓋板49的前緣，再沿該蓋板49的頂面向後側延伸， 最後繞過該立板後部48頂緣而沿該立板後部48外側面向下延 伸而連接於電路板99上。 相較於前揭第一實施例，本第四實施例中的該蓋板49可 拉長該變壓器91二次侧接線94的絕緣距離，因此，該底板41 刖緣至後緣的距離L3，係小於該變壓器二次側接線94以該蓋 板49前緣為起點至該立板後部48頂緣的距離L1加上該二次 側接線94由立板45後部48頂緣向下延伸至連接於該電路板 99的距離L2，亦即，L3<L1+L2。 藉此，絕緣距離即可直接由L3來決定，而仍具有足夠的 絕緣距離’不需如同習知技術般的需要在電路板99上保留相 當空間’因此不會有空間上的浪費，而仍可符合安全規範。 本第四貫施例之其餘結構及所能達成的功效均概同於前 揭第一實施例，容不贅述。 請再參閱第十一圖 提供之一種變壓器承座 之處在於： 至第十三圖，本創作第五較佳實施例所 5〇，主要概同於前揭第二實施例，不同 詨萬^ 有一盖板的’該蓋板％與該立板55係一體成形， 1 Μ部覆蓋該立板％所圍合的區域。此外，該蓋板 有凹槽59卜該變壓器二次側接線94係通過該 凹'91而雙其限位。該蓋板分之前緣具有二扣持部州，扣 持於s亥變壓器91之骨架％。 該立板55、該蓋板59與該底板5】聯合形成一容置空間 R，並於前側形成—開σ 〇，該變壓器91係可由該開口 〇置 入該容置空間R内。 ▲與前揭第二實施例相較，本第五實施例的該蓋板％可拉 長^>1 H—次側接線94的絕緣距離，但由於該蓋板59僅局 部覆蓋該立板55 合的區域，因此，於本第五實施例中，
4底板51月，』緣至後緣的距離u，係可能小於(也可能大於)該 艾£器一-人側接線9 4以該蓋板5 9前緣為起點至該立板後部5 8 頂緣的距_ L1加上该—次側接線94由立板後部％頂緣向下 延伸至連接於該等二次侧接點582的距離L2，亦即，L3<L1+U 或 L3>L1+L2。 在L3>L1+L2的狀況下，則只要調整好L1+L2的長度即可 符合較長絕緣距離的規範，而不需再去顧慮L3的長度。而在 L3<L1+L2的狀況下，則絕緣距離係直接由[3來決定，而仍 具有足夠的絕緣距離。前述兩種狀況均不需如同習知技術般的 需要在電路板99上保留相當空間，因此不會有空間上的浪費， M432119 而仍可符合安全規範。 >本第五實施例之其餘結構及所能達成的功效均概同於前 揭第二實施例，容不贅述。 請再參閱第十四圖至第十五圖，本創作第六較佳實施例所 提供之-種變壓II ^座6G，主要概同於前揭第二實施例，不同 之處在於： 更包含有一蓋板69’該蓋板69與該立板65係一體成形， μ蓋板69係，局部覆盡該立板&所圍合的區域的兩側而於中央 形成一鏤空部位691 ;該變壓器91的二次側接線94係繞過該 立板後部68頂緣而沿該立板後部68外側面向下延伸而連接於 該電路板99。 ' 與前揭第二實施例相較’本第六實施例的該蓋板69係覆 蓋於s亥立板65所圍合的區域的兩側，因此兩側的絕緣距離即 拉長’藉此該立板65外的兩側所置放的元件即可離該立板65 更近’進而節省該電路板(圖中未示)上的空間。 本第六實施例之其餘結構及所能達成的功效均概同於前 揭第二實施例，容不贅述。 請再參閱第十六圖，本創作第七較佳實施例所提供之一種 變壓器承座70 ’主要概同於前揭第二實施例，不同之處在於： 本第七實施例之該立板75不具有二側部，而僅具有該後 部78 〇 藉此，該變壓器91的二次侧接線94同樣繞過該立板後部 78頂緣而沿該立板後部78外側面向下延伸而連接於該電路板 (圖中未示）。 M432119 θ與前揭第二實施例相較，本第七實施例不具有二側部，而 疋僅藉由錢部78來達到増加絕緣雜的效果。 揭第結構及所能達成的功效均概同於前 立：i:知，本創作所可達成之功效在於，藉由該底板騎 立板之結構，可有效的拉長絕緣距離，進而無電^板: 設置絕緣空間，而仍可符合絕緣的安全規範。 路板上 【圖式簡單說明】 第-圖係本創作第—較佳實施例之立體圖。 第二圖係本創作第—較佳實施例之組裝示意圖，顯示置放 及置於電路板上的狀態。 第三圖係沿第二圖中3-3剖線之剖視圖。 ，四圖係本創作第二較佳實施例之立體圖。 =五圖係本創作第二較佳實施例之另—立體圖，顯示背部 之狀％。 圖係摘作第二較佳實施例之組裝*意圖 -變壓器以及置於電路板上的狀態。 f七圖係沿第六圖中W剖線之剖視圖。 =八圖係本創作第三較佳實關之立體圖。 ^九圖係摘作第吨佳實施例之立體圖。 第十圖係本創作第四較值實施例之剖視示意圖。 第十-圖係本創作第五較佳實施例之立體圖。 第十-圖係本創作第五較佳實施例之組裝示意圖，顯示置 M432119 放一變壓器以及置於電路板上的狀態。 第十三圖係沿第十二圖中13-13剖線之剖視圖。 第十四圖係本創作第六較佳實施例之立體圖。 第十五圖係本創作第六較佳實施例之組裝示意圖，顯示置 放一變壓器以及置於電路板上的狀態。 第十六圖係本創作第七較佳實施例之組裝示意圖，顯示置 放一變壓器的狀態。 第十七圖係習知變壓器設置於電路板上的示意圖。 第十八圖係習知變壓器設置於電路板上的另一示意圖。 【主要元件符號說明】 10變壓器承座 11底板 18後部 20變壓器承座 15立板 16側部 21底板 211擋部 212扣持部 25立板 251壓制部 26側部 261扣持部 282二次側接點 30變壓器承座 28後部 281凹槽 35立板 40變壓器承座 38後部 383導線框 41底板 49蓋板 45立板 48後部 12 M432119 50變壓器承座 51底板 55立板 59蓋板 591凹槽 592扣持部 60變壓器承座 65立板 68後部 69蓋板 691鏤空部位 70變壓器承座 75立板 78後部 91變壓器 92 —次側接線 94二次側接線 %骨架 99電路板 L1變壓器之二次側接線起點至立板後部的距離 L2二次側接線由立板後部頂緣向下延伸至連接於電路板 的距離 L3底板前緣至後緣的距離 0開口 R容置空間 M432119 新型專利說明書 丨公告本 (本說明書格式、順序，請勿任意更動，※記號部分請勿填寫） -* ※申請案號：I沪a ※申請日：扣Ο ΙΟ 1 7 ※IPC 分類：h|。I f Μ/。ς (2006.01) 一、 新型名稱：（t文/英文） 變壓器承座 二、 中文新型摘要： 籲 一種變壓器承座，包含有：一底板，係絕緣材質；一立板’ 係絕緣材質，由該底板之邊緣向上延伸而成，該立板至少具有 一後部，該後部對應位於該底板之後側；其中，該底板係用以 置於一電路板或電子設備上，且該底板係用以供一變壓器置 放；在置放一變壓器於該底板時，該變壓器之一次側接線位於 該底板前側，該變壓器之二次側接線係包覆有絕緣材，而爬過 該立板的後部頂緣再向下延伸而連接於該電路板或電子設備。 三、英文新型摘要： M432119 ~、申請專利範圍： I.一種變壓器承座，包含有·· 底板，係絕緣材質； 板係、、.巴緣材質，由該底板之邊緣向上延伸而成，七
板至少具有-後部，該後部對應位於該底板之後側；A 其令’該底板係用以置於一電路板或電子設備上，且 ^糸用以供-變壓器置放；在置放一變壓器於該底板時，= =-次側接線位於該底板前側，該變壓器之 ： 包覆有絕緣材，而爬過該立板的後部頂緣再向下延伸而連接= 该電路板或電子設備。 要於 2.依據中請專利朗第i項所述之變壓器承座，盆中 立板與該底板係一體成型。 '、 邊 ,3.依射料概圍第丨項所述之變㈣承座，其中：該 後部之賴下緣設有魏二:欠_點，該賴器之二次側接線 攸過該立板的後部頂緣再向下延伸㈣接於該等二次侧接 點，並再#由該等二次側接點連接於該電路板或電子設備。 4.依據申請專職圍第丨項所述之變壓科座其中：該 立板的後部頂緣係設有至少1槽，該變壓器二次側接線係通 過該至少一凹槽。 5·依據中請專利範圍第1項所述之變壓器承座，其中：該 立板具有至少一壓制部，壓制於該變壓器。 6. 依據申請專利範圍第卜員所述之變壓器承座其中：更 包含有-擋部，位於該底板後側，擋止於該變壓器。 7. 依據中請專利範圍第丨項所述之變壓器承座，其中：該 15 M432119 七、圖式:
第二圖 92

Claims (1)

  1. M432119
    212 261 第六圖 91
    第七圖 M432119
    第八圖
    第九圖 M432119
    第十圖
    第十一圖
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