JP4711624B2 - 銅電極形成アプリケーションのためのald窒化タンタル及びアルファ相タンタルの集積 - Google Patents
銅電極形成アプリケーションのためのald窒化タンタル及びアルファ相タンタルの集積 Download PDFInfo
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- JP4711624B2 JP4711624B2 JP2003541048A JP2003541048A JP4711624B2 JP 4711624 B2 JP4711624 B2 JP 4711624B2 JP 2003541048 A JP2003541048 A JP 2003541048A JP 2003541048 A JP2003541048 A JP 2003541048A JP 4711624 B2 JP4711624 B2 JP 4711624B2
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- Prior art keywords
- layer
- tantalum
- containing compound
- depositing
- nitrogen
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- 239000010949 copper Substances 0.000 title claims description 46
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims description 44
- 229910052802 copper Inorganic materials 0.000 title claims description 43
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 title claims description 38
- 229910052715 tantalum Inorganic materials 0.000 title claims description 26
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 title claims description 26
- 230000015572 biosynthetic process Effects 0.000 title description 9
- 230000010354 integration Effects 0.000 title 1
- 238000000034 method Methods 0.000 claims description 83
- 230000004888 barrier function Effects 0.000 claims description 80
- 239000000758 substrate Substances 0.000 claims description 68
- 238000000151 deposition Methods 0.000 claims description 67
- 150000001875 compounds Chemical class 0.000 claims description 62
- 239000007789 gas Substances 0.000 claims description 55
- 229910052751 metal Inorganic materials 0.000 claims description 55
- 239000002184 metal Substances 0.000 claims description 55
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 34
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 34
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 31
- -1 nitrogen-containing compound Chemical class 0.000 claims description 23
- 229910021529 ammonia Inorganic materials 0.000 claims description 17
- 229910052786 argon Inorganic materials 0.000 claims description 17
- 229910052782 aluminium Inorganic materials 0.000 claims description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 15
- 229910002056 binary alloy Inorganic materials 0.000 claims description 15
- 229910052757 nitrogen Inorganic materials 0.000 claims description 15
- 239000010936 titanium Substances 0.000 claims description 15
- 238000010926 purge Methods 0.000 claims description 13
- 229910052719 titanium Inorganic materials 0.000 claims description 13
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 12
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 10
- 239000001307 helium Substances 0.000 claims description 10
- 229910052734 helium Inorganic materials 0.000 claims description 10
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 10
- 239000002245 particle Substances 0.000 claims description 9
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 8
- 229910052721 tungsten Inorganic materials 0.000 claims description 8
- 239000010937 tungsten Substances 0.000 claims description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 7
- 229910052718 tin Inorganic materials 0.000 claims description 7
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 6
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 6
- 229910052726 zirconium Inorganic materials 0.000 claims description 6
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 4
- 229910052749 magnesium Inorganic materials 0.000 claims description 4
- 239000011777 magnesium Substances 0.000 claims description 4
- DIIIISSCIXVANO-UHFFFAOYSA-N 1,2-Dimethylhydrazine Chemical compound CNNC DIIIISSCIXVANO-UHFFFAOYSA-N 0.000 claims description 3
- JUOJXNAVZADLAJ-UHFFFAOYSA-N bis(2-methylpropyl)diazene Chemical compound CC(C)CN=NCC(C)C JUOJXNAVZADLAJ-UHFFFAOYSA-N 0.000 claims description 3
- VSLPMIMVDUOYFW-UHFFFAOYSA-N dimethylazanide;tantalum(5+) Chemical compound [Ta+5].C[N-]C.C[N-]C.C[N-]C.C[N-]C.C[N-]C VSLPMIMVDUOYFW-UHFFFAOYSA-N 0.000 claims description 3
- UCSVJZQSZZAKLD-UHFFFAOYSA-N ethyl azide Chemical compound CCN=[N+]=[N-] UCSVJZQSZZAKLD-UHFFFAOYSA-N 0.000 claims description 3
- HDZGCSFEDULWCS-UHFFFAOYSA-N monomethylhydrazine Chemical compound CNN HDZGCSFEDULWCS-UHFFFAOYSA-N 0.000 claims description 3
- HKOOXMFOFWEVGF-UHFFFAOYSA-N phenylhydrazine Chemical compound NNC1=CC=CC=C1 HKOOXMFOFWEVGF-UHFFFAOYSA-N 0.000 claims description 3
- 229940067157 phenylhydrazine Drugs 0.000 claims description 3
- FDRCQGDMDFRXAU-UHFFFAOYSA-N C(C)(C)(C)N=[Ta](NC(CC)CC)(NC(CC)CC)NC(CC)CC Chemical compound C(C)(C)(C)N=[Ta](NC(CC)CC)(NC(CC)CC)NC(CC)CC FDRCQGDMDFRXAU-UHFFFAOYSA-N 0.000 claims description 2
- YYKBKTFUORICGA-UHFFFAOYSA-N CCN(CC)[Ta](=NC(C)(C)C)(N(CC)CC)N(CC)CC Chemical compound CCN(CC)[Ta](=NC(C)(C)C)(N(CC)CC)N(CC)CC YYKBKTFUORICGA-UHFFFAOYSA-N 0.000 claims description 2
- FBNHWOBJTUBDME-UHFFFAOYSA-N CN(C)[Ta](N(C)C)(N(C)C)=NC(C)(C)C Chemical compound CN(C)[Ta](N(C)C)(N(C)C)=NC(C)(C)C FBNHWOBJTUBDME-UHFFFAOYSA-N 0.000 claims description 2
- BRUWTWNPPWXZIL-UHFFFAOYSA-N ethyl(methyl)azanide;tantalum(5+) Chemical compound [Ta+5].CC[N-]C.CC[N-]C.CC[N-]C.CC[N-]C.CC[N-]C BRUWTWNPPWXZIL-UHFFFAOYSA-N 0.000 claims description 2
- MTHYQSRWPDMAQO-UHFFFAOYSA-N diethylazanide;tantalum(5+) Chemical compound CCN(CC)[Ta](N(CC)CC)(N(CC)CC)(N(CC)CC)N(CC)CC MTHYQSRWPDMAQO-UHFFFAOYSA-N 0.000 claims 2
- SKTCDJAMAYNROS-UHFFFAOYSA-N methoxycyclopentane Chemical compound COC1CCCC1 SKTCDJAMAYNROS-UHFFFAOYSA-N 0.000 claims 1
- MUQNAPSBHXFMHT-UHFFFAOYSA-N tert-butylhydrazine Chemical compound CC(C)(C)NN MUQNAPSBHXFMHT-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 193
- 230000008569 process Effects 0.000 description 42
- 230000008021 deposition Effects 0.000 description 29
- 238000012545 processing Methods 0.000 description 25
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- 239000000463 material Substances 0.000 description 23
- 238000005229 chemical vapour deposition Methods 0.000 description 22
- 238000006243 chemical reaction Methods 0.000 description 21
- 239000003870 refractory metal Substances 0.000 description 14
- 125000004122 cyclic group Chemical group 0.000 description 12
- 239000001257 hydrogen Substances 0.000 description 12
- 229910052739 hydrogen Inorganic materials 0.000 description 12
- 230000012010 growth Effects 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 239000000376 reactant Substances 0.000 description 9
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 8
- 239000012159 carrier gas Substances 0.000 description 8
- 239000013078 crystal Substances 0.000 description 8
- 238000009713 electroplating Methods 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- 229910000077 silane Inorganic materials 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 150000002431 hydrogen Chemical class 0.000 description 7
- 238000009832 plasma treatment Methods 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 238000012546 transfer Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- WYEMLYFITZORAB-UHFFFAOYSA-N boscalid Chemical compound C1=CC(Cl)=CC=C1C1=CC=CC=C1NC(=O)C1=CC=CN=C1Cl WYEMLYFITZORAB-UHFFFAOYSA-N 0.000 description 6
- 238000005137 deposition process Methods 0.000 description 6
- 230000007773 growth pattern Effects 0.000 description 6
- 230000015654 memory Effects 0.000 description 6
- 150000004767 nitrides Chemical class 0.000 description 6
- 239000002243 precursor Substances 0.000 description 6
- MNWRORMXBIWXCI-UHFFFAOYSA-N tetrakis(dimethylamido)titanium Chemical compound CN(C)[Ti](N(C)C)(N(C)C)N(C)C MNWRORMXBIWXCI-UHFFFAOYSA-N 0.000 description 6
- 238000011282 treatment Methods 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- 239000011261 inert gas Substances 0.000 description 5
- 239000012071 phase Substances 0.000 description 5
- 239000002210 silicon-based material Substances 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- UGACIEPFGXRWCH-UHFFFAOYSA-N [Si].[Ti] Chemical compound [Si].[Ti] UGACIEPFGXRWCH-UHFFFAOYSA-N 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- TUTOKIOKAWTABR-UHFFFAOYSA-N dimethylalumane Chemical compound C[AlH]C TUTOKIOKAWTABR-UHFFFAOYSA-N 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 4
- 238000005086 pumping Methods 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 239000010953 base metal Substances 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000007772 electroless plating Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 230000005012 migration Effects 0.000 description 3
- 238000013508 migration Methods 0.000 description 3
- 239000011800 void material Substances 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 238000003917 TEM image Methods 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- JRBRVDCKNXZZGH-UHFFFAOYSA-N alumane;copper Chemical compound [AlH3].[Cu] JRBRVDCKNXZZGH-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000003638 chemical reducing agent Substances 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000007872 degassing Methods 0.000 description 2
- VJDVOZLYDLHLSM-UHFFFAOYSA-N diethylazanide;titanium(4+) Chemical compound [Ti+4].CC[N-]CC.CC[N-]CC.CC[N-]CC.CC[N-]CC VJDVOZLYDLHLSM-UHFFFAOYSA-N 0.000 description 2
- UBHZUDXTHNMNLD-UHFFFAOYSA-N dimethylsilane Chemical compound C[SiH2]C UBHZUDXTHNMNLD-UHFFFAOYSA-N 0.000 description 2
- LNKYFCABELSPAN-UHFFFAOYSA-N ethyl(methyl)azanide;titanium(4+) Chemical compound [Ti+4].CC[N-]C.CC[N-]C.CC[N-]C.CC[N-]C LNKYFCABELSPAN-UHFFFAOYSA-N 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- 150000002736 metal compounds Chemical class 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 2
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 2
- 238000009736 wetting Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
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- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 239000005046 Chlorosilane Substances 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229940126062 Compound A Drugs 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
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- 238000007796 conventional method Methods 0.000 description 1
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- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
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- KSOCVFUBQIXVDC-FMQUCBEESA-N p-azophenyltrimethylammonium Chemical compound C1=CC([N+](C)(C)C)=CC=C1\N=N\C1=CC=C([N+](C)(C)C)C=C1 KSOCVFUBQIXVDC-FMQUCBEESA-N 0.000 description 1
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- RPESBQCJGHJMTK-UHFFFAOYSA-I pentachlorovanadium Chemical compound [Cl-].[Cl-].[Cl-].[Cl-].[Cl-].[V+5] RPESBQCJGHJMTK-UHFFFAOYSA-I 0.000 description 1
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- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- OEIMLTQPLAGXMX-UHFFFAOYSA-I tantalum(v) chloride Chemical compound Cl[Ta](Cl)(Cl)(Cl)Cl OEIMLTQPLAGXMX-UHFFFAOYSA-I 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- UBZYKBZMAMTNKW-UHFFFAOYSA-J titanium tetrabromide Chemical compound Br[Ti](Br)(Br)Br UBZYKBZMAMTNKW-UHFFFAOYSA-J 0.000 description 1
- NLLZTRMHNHVXJJ-UHFFFAOYSA-J titanium tetraiodide Chemical compound I[Ti](I)(I)I NLLZTRMHNHVXJJ-UHFFFAOYSA-J 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
- PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical compound C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- DUNKXUFBGCUVQW-UHFFFAOYSA-J zirconium tetrachloride Chemical compound Cl[Zr](Cl)(Cl)Cl DUNKXUFBGCUVQW-UHFFFAOYSA-J 0.000 description 1
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Description
[0001]本発明の実施形態は、集積回路素子を製造するための方法に関する。特に本発明の実施形態は、一つ以上の周期的堆積プロセスを使用して電極配線構造を形成することに関する。
[0002]集積回路(IC)素子の構造サイズは、4分の1ミクロン以下にまで小型化されているので、電気抵抗と電流密度は懸念と改善の分野になっている。多層配線技術は、コンタクト、プラグ、バイア、ライン、ワイヤ、その他の特徴部(構造要素)を含む高いアスペクト比の特徴部に形成された、IC素子中の導電性経路を与える。基板上に相互接続(配線)を形成するための典型的なプロセスは、一つ以上の層を堆積することと、一つ以上の特徴部を形成するためにこれらの層の少なくとも一つをエッチングすることと、これらの特徴部にバリア層を堆積することと、特徴部を充填するために一つ以上の層を堆積することと、を含む。典型的には特徴部は、下位の導電性層と上位の導電性層との間に配置された誘電体材料内に形成される。相互接続は、上位導電性層と下位導電性層とを接続するためにこの特徴部内に形成される。これらの相互接続特徴部の信頼度の高い形成は、回路の製造と、個別の基板とダイ(チップ)とにおける回路密度及び品質を改善するための止むことのない努力とにとって重要である。
[0010]本発明の上述の特徴を達成する仕方が詳細に理解できるように、上記に簡単に要約された本発明の更に特定の説明は、付属の図面に示された本発明の実施形態を参照することによって行われる。しかしながら、本発明が、他の同等に有効な実施形態にも適用可能であるので、付属の図面が本発明の単に典型的な実施形態を説明するものであって、したがって、本発明の範囲を限定するものと考えるべきでないことに留意すべきである。
Claims (18)
- 基板上に電極配線(金属相互接続)を形成するための方法において:
タンタル含有化合物の1以上の適用量(pulse)と窒素含有化合物の1以上の適用量とを交互に導入することにより、基板の第1の金属層の少なくとも一部分の上にタンタル及び窒素を含むバリア層であって、20オングストローム未満の最終的な厚さを有し、第1の金属層の粒子構造と同じ粒子構造を有するバリア層を堆積するステップと;
前記バリア層の少なくとも一部分の上に二元合金シード層を堆積するステップと;
前記二元合金シード層の少なくとも一部分の上に第2の金属層を堆積するステップと;
を備える、前記方法。 - 前記バリア層は、窒化タンタルを含む、請求項1に記載の方法。
- 前記第2の金属層は、前記第1の金属層の粒子構造と同じ粒子構造を有する、請求項1に記載の方法。
- 各適用量は、前記バリア層が10オングストロームの最終的な厚さになるまで反復される、請求項1に記載の方法。
- 前記バリア層は、10オングストロームの最終的な厚さを有する、請求項1に記載の方法。
- 前記交互の適用量導入は、前記バリア層を形成するために10回から70回の間、反復される、請求項1に記載の方法。
- 前記タンタル含有化合物の各適用量導入と前記窒素含有化合物の各適用量導入の時間中に連続的にパージガスを流すことを更に含む、請求項1に記載の方法。
- 前記パージガスは、アルゴン、窒素、ヘリウム、又はそれらの組合せを含む、請求項7に記載の方法。
- 前記タンタル含有化合物と前記窒素含有化合物の各適用量はある遅延時間だけ分離されている、請求項1に記載の方法。
- 各遅延時間中に、前記タンタル含有化合物の一部又は前記窒素含有化合物の一部が、前記第1の金属層に吸着する、請求項9に記載の方法。
- 前記遅延時間中に、未吸着分子が前記第1の金属層から除去される、請求項10に記載の方法。
- 前記窒素含有化合物は、アンモニア、ヒドラジン、メチルヒドラジン、ジメチルヒドラジン、tブチルヒドラジン、フェニルヒドラジン、アゾイソブタン、エチルアジド、これらの誘導体、及びこれらの組合せからなる群から選択される、請求項1に記載の方法。
- 前記タンタル含有化合物は、t−ブチルイミノトリス(ジエチルアミノ)タンタル(TBTDET)、ペンタキス(エチルメチルアミノ)タンタル(PEMAT)、ペンタキス(ジメチルアミノ)タンタル、(PDMAT)、ペンタキス(ジエチルアミノ)タンタル(PDEAT)、t−ブチルイミノトリス(ジエチルメチルアミノ)タンタル(TBTMET)、t−ブチルイミノトリス(ジメチルアミノ)タンタル(TBTDMT)、ビス(シクロペンタジエニル)三水素化タンタル((Cp)2TaH3)、ビス(メチルシクロペンタジエニル)三水素化タンタル((CpMe)2TaH3)、これらの誘導体、及びこれらの組合せからなる群から選択される、請求項1に記載の方法。
- 前記第1、第2の金属層は、各々タングステン、銅又はそれらの組合せを含む、請求項1に記載の方法。
- 前記二元合金シード層は、前記バリア層の上に堆積された前記第1のシード層と前記第1のシード層の上に堆積された第2のシード層とを含む、請求項1に記載の方法。
- 前記第1のシード層は、銅と、アルミニウム、マグネシウム、チタン、ジルコニウム、錫(すず)、及びそれらの組合せからなる群から選択された金属との合金を含むか、又は前記第1のシード層はアルミニウム、マグネシウム、チタン、ジルコニウム、錫、及びそれらの組合せからなる群から選択された金属を含む、請求項15に記載の方法。
- 基板上の第1の粒子構造を有する第1の金属層の少なくとも一部分の上に10オングストロームの厚さを有する二層バリアを堆積するステップと、
二元合金シード層を堆積するステップと、
前記二元合金シード層の少なくとも一部分の上に第2の金属層を堆積するステップと、を含む基板上に電極配線を形成するための方法であって、
前記二層バリアは、
タンタル含有化合物の一つ以上の適用量と窒素含有化合物の一つ以上の適用量とを交互に導入することによって堆積された窒化タンタルの第1の層と、
アルファ相タンタルの第2の層と、
を含み、
前記二層バリアは、前記第1の粒子構造と同じ第2の粒子構造を有する、方法。 - 基板上に電極配線を形成するための方法において:
基板表面に、第1の粒子構造を有する第1の金属層を堆積するステップと;
タンタル含有化合物の一つ以上の適用量と窒素含有化合物の一つ以上の適用量とを交互に導入することによって、前記第1の金属層の少なくとも一部分の上に前記第1の粒子構造と同じ第2の粒子構造を有し、10オングストロームの厚さを有する窒化タンタルバリア層を堆積するステップと;
銅と、アルミニウム、マグネシウム、チタン、ジルコニウム、錫、及びこれらの組合せからなる群から選択された金属とを含む二元合金シード層を堆積するステップと;
前記二元合金シード層の少なくとも一部分の上に第2の金属層を堆積するステップと;
を備える、前記方法。
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
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US34608601P | 2001-10-26 | 2001-10-26 | |
US60/346,086 | 2001-10-26 | ||
US10/193,333 US20030082307A1 (en) | 2001-10-26 | 2002-07-10 | Integration of ALD tantalum nitride and alpha-phase tantalum for copper metallization application |
US10/193,333 | 2002-07-10 | ||
US10/199,415 | 2002-07-18 | ||
US10/199,415 US20030082301A1 (en) | 2001-10-26 | 2002-07-18 | Enhanced copper growth with ultrathin barrier layer for high performance interconnects |
PCT/US2002/034277 WO2003038892A2 (en) | 2001-10-26 | 2002-10-25 | Atomic-layer-deposited tantalum nitride and alpha-phase tantalum as barrier layers for copper metallization |
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US7049226B2 (en) | 2001-09-26 | 2006-05-23 | Applied Materials, Inc. | Integration of ALD tantalum nitride for copper metallization |
CN100593235C (zh) * | 2003-06-13 | 2010-03-03 | 应用材料公司 | 用于铜金属化的ald氮化钽的集成 |
US7605469B2 (en) | 2004-06-30 | 2009-10-20 | Intel Corporation | Atomic layer deposited tantalum containing adhesion layer |
JP4783561B2 (ja) * | 2004-09-27 | 2011-09-28 | 株式会社アルバック | 銅配線の形成方法 |
CN100369215C (zh) * | 2005-12-02 | 2008-02-13 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种去除暴露区域聚合物的解吸附工艺 |
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CN1575517A (zh) | 2005-02-02 |
WO2003038892A3 (en) | 2004-02-26 |
WO2003038892A2 (en) | 2003-05-08 |
TWI223867B (en) | 2004-11-11 |
JP2005508092A (ja) | 2005-03-24 |
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