WO2003038892A3 - Atomic-layer-deposited tantalum nitride and alpha-phase tantalum as barrier layers for copper metallization - Google Patents
Atomic-layer-deposited tantalum nitride and alpha-phase tantalum as barrier layers for copper metallization Download PDFInfo
- Publication number
- WO2003038892A3 WO2003038892A3 PCT/US2002/034277 US0234277W WO03038892A3 WO 2003038892 A3 WO2003038892 A3 WO 2003038892A3 US 0234277 W US0234277 W US 0234277W WO 03038892 A3 WO03038892 A3 WO 03038892A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- atomic
- alpha
- tantalum
- barrier layers
- Prior art date
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4411—Cooling of the reaction chamber walls
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
- C23C16/45508—Radial flow
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45512—Premixing before introduction in the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45582—Expansion of gas before it reaches the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
- H01L21/28562—Selective deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB02821269XA CN1319146C (en) | 2001-10-26 | 2002-10-25 | Integration of ald tantalum nitride and alpha-phase tantalum for copper metallization application |
KR10-2004-7006190A KR20040058239A (en) | 2001-10-26 | 2002-10-25 | Integration of ald tantalum nitride and alpha-phase tantalum for copper metallization application |
JP2003541048A JP4711624B2 (en) | 2001-10-26 | 2002-10-25 | Integration of ALD tantalum nitride and alpha phase tantalum for copper electrode formation applications |
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US34608601P | 2001-10-26 | 2001-10-26 | |
US60/346,086 | 2001-10-26 | ||
US10/193,333 US20030082307A1 (en) | 2001-10-26 | 2002-07-10 | Integration of ALD tantalum nitride and alpha-phase tantalum for copper metallization application |
US10/193,333 | 2002-07-10 | ||
US10/199,415 | 2002-07-18 | ||
US10/199,415 US20030082301A1 (en) | 2001-10-26 | 2002-07-18 | Enhanced copper growth with ultrathin barrier layer for high performance interconnects |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2003038892A2 WO2003038892A2 (en) | 2003-05-08 |
WO2003038892A3 true WO2003038892A3 (en) | 2004-02-26 |
Family
ID=27393190
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2002/034277 WO2003038892A2 (en) | 2001-10-26 | 2002-10-25 | Atomic-layer-deposited tantalum nitride and alpha-phase tantalum as barrier layers for copper metallization |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP4711624B2 (en) |
CN (1) | CN1319146C (en) |
TW (1) | TWI223867B (en) |
WO (1) | WO2003038892A2 (en) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7049226B2 (en) | 2001-09-26 | 2006-05-23 | Applied Materials, Inc. | Integration of ALD tantalum nitride for copper metallization |
CN100593235C (en) * | 2003-06-13 | 2010-03-03 | 应用材料公司 | Integration of ALD tantalum nitride for copper metallization |
US7605469B2 (en) | 2004-06-30 | 2009-10-20 | Intel Corporation | Atomic layer deposited tantalum containing adhesion layer |
JP4783561B2 (en) | 2004-09-27 | 2011-09-28 | 株式会社アルバック | Method for forming copper wiring |
CN100369215C (en) * | 2005-12-02 | 2008-02-13 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Adsorption stripping process for removing exposed zone polymer |
JP2007073980A (en) * | 2006-10-30 | 2007-03-22 | Toshiba Corp | Tan film for semiconductor device and semiconductor device using the same |
KR100881716B1 (en) | 2007-07-02 | 2009-02-06 | 주식회사 하이닉스반도체 | Method for fabricating tungsten line with reduced sheet resistance tungsten layer and method for fabricating gate of semiconductor device using the same |
US20100102417A1 (en) * | 2008-10-27 | 2010-04-29 | Applied Materials, Inc. | Vapor deposition method for ternary compounds |
US8227344B2 (en) * | 2010-02-26 | 2012-07-24 | Tokyo Electron Limited | Hybrid in-situ dry cleaning of oxidized surface layers |
KR101661768B1 (en) | 2010-09-03 | 2016-09-30 | 엘지전자 주식회사 | Solar cell and manufacturing method thereof |
CN103151302A (en) * | 2013-02-26 | 2013-06-12 | 复旦大学 | Method for preparing low-resistance tantalum and tantalum nitride double-layer barrier layer by utilizing nitrogen-containing plasma |
KR101708242B1 (en) * | 2016-08-11 | 2017-02-20 | 엘지전자 주식회사 | Solar cell and manufacturing method thereof |
US10229826B2 (en) * | 2016-10-21 | 2019-03-12 | Lam Research Corporation | Systems and methods for forming low resistivity metal contacts and interconnects by reducing and removing metallic oxide |
CN109273402B (en) * | 2018-09-13 | 2020-08-25 | 德淮半导体有限公司 | Manufacturing method of metal barrier layer, metal interconnection structure and manufacturing method thereof |
TWI731293B (en) | 2019-01-18 | 2021-06-21 | 元智大學 | Nanotwinned structure |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5221449A (en) * | 1990-10-26 | 1993-06-22 | International Business Machines Corporation | Method of making Alpha-Ta thin films |
EP1077484A2 (en) * | 1999-08-16 | 2001-02-21 | Applied Materials, Inc. | Barrier layer for electroplating processes |
WO2001029891A1 (en) * | 1999-10-15 | 2001-04-26 | Asm America, Inc. | Conformal lining layers for damascene metallization |
US6270572B1 (en) * | 1998-08-07 | 2001-08-07 | Samsung Electronics Co., Ltd. | Method for manufacturing thin film using atomic layer deposition |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6387805B2 (en) * | 1997-05-08 | 2002-05-14 | Applied Materials, Inc. | Copper alloy seed layer for copper metallization |
JP4097747B2 (en) * | 1997-08-07 | 2008-06-11 | 株式会社アルバック | Barrier film formation method |
US6140234A (en) * | 1998-01-20 | 2000-10-31 | International Business Machines Corporation | Method to selectively fill recesses with conductive metal |
KR100279300B1 (en) * | 1998-05-11 | 2001-02-01 | 윤종용 | How to connect metal wires |
US6218302B1 (en) * | 1998-07-21 | 2001-04-17 | Motorola Inc. | Method for forming a semiconductor device |
US6432819B1 (en) * | 1999-09-27 | 2002-08-13 | Applied Materials, Inc. | Method and apparatus of forming a sputtered doped seed layer |
JP2001144089A (en) * | 1999-11-11 | 2001-05-25 | Sony Corp | Method of manufacturing semiconductor device |
DE10196055T1 (en) * | 2000-04-13 | 2003-04-03 | Gelest Inc | Process for the vapor deposition of titanium-silicon-nitrogen films |
-
2002
- 2002-10-25 TW TW91125352A patent/TWI223867B/en not_active IP Right Cessation
- 2002-10-25 CN CNB02821269XA patent/CN1319146C/en not_active Expired - Lifetime
- 2002-10-25 JP JP2003541048A patent/JP4711624B2/en not_active Expired - Fee Related
- 2002-10-25 WO PCT/US2002/034277 patent/WO2003038892A2/en active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5221449A (en) * | 1990-10-26 | 1993-06-22 | International Business Machines Corporation | Method of making Alpha-Ta thin films |
US6270572B1 (en) * | 1998-08-07 | 2001-08-07 | Samsung Electronics Co., Ltd. | Method for manufacturing thin film using atomic layer deposition |
EP1077484A2 (en) * | 1999-08-16 | 2001-02-21 | Applied Materials, Inc. | Barrier layer for electroplating processes |
WO2001029891A1 (en) * | 1999-10-15 | 2001-04-26 | Asm America, Inc. | Conformal lining layers for damascene metallization |
Also Published As
Publication number | Publication date |
---|---|
CN1575517A (en) | 2005-02-02 |
WO2003038892A2 (en) | 2003-05-08 |
TWI223867B (en) | 2004-11-11 |
JP2005508092A (en) | 2005-03-24 |
CN1319146C (en) | 2007-05-30 |
JP4711624B2 (en) | 2011-06-29 |
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