SG52166A1 - Process for manufacture of mos gated device with reduced mask count - Google Patents
Process for manufacture of mos gated device with reduced mask countInfo
- Publication number
- SG52166A1 SG52166A1 SG1995001261A SG1995001261A SG52166A1 SG 52166 A1 SG52166 A1 SG 52166A1 SG 1995001261 A SG1995001261 A SG 1995001261A SG 1995001261 A SG1995001261 A SG 1995001261A SG 52166 A1 SG52166 A1 SG 52166A1
- Authority
- SG
- Singapore
- Prior art keywords
- mask
- cell
- manufacture
- gated device
- mos gated
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 210000004027 cell Anatomy 0.000 abstract 2
- 210000005056 cell body Anatomy 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41716—Cathode or anode electrodes for thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66363—Thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66727—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the source electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Semiconductor Memories (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Thyristors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Measuring Fluid Pressure (AREA)
- Thin Film Transistor (AREA)
- Control Of Multiple Motors (AREA)
- Non-Volatile Memory (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/299,533 US5795793A (en) | 1994-09-01 | 1994-09-01 | Process for manufacture of MOS gated device with reduced mask count |
Publications (1)
Publication Number | Publication Date |
---|---|
SG52166A1 true SG52166A1 (en) | 1998-09-28 |
Family
ID=23155225
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG1995001261A SG52166A1 (en) | 1994-09-01 | 1995-08-31 | Process for manufacture of mos gated device with reduced mask count |
Country Status (17)
Country | Link |
---|---|
US (2) | US5795793A (fr) |
EP (2) | EP1686616A3 (fr) |
JP (2) | JP3527247B2 (fr) |
KR (1) | KR100295631B1 (fr) |
CN (1) | CN1311526C (fr) |
AT (1) | ATE358331T1 (fr) |
BR (1) | BR9508883A (fr) |
CA (1) | CA2199013A1 (fr) |
CZ (1) | CZ62997A3 (fr) |
DE (1) | DE69535441T2 (fr) |
FI (1) | FI970850A (fr) |
HU (1) | HUT76792A (fr) |
NO (1) | NO970934L (fr) |
PL (1) | PL178316B1 (fr) |
SG (1) | SG52166A1 (fr) |
TW (1) | TW280944B (fr) |
WO (1) | WO1996007200A1 (fr) |
Families Citing this family (77)
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US5798554A (en) * | 1995-02-24 | 1998-08-25 | Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno | MOS-technology power device integrated structure and manufacturing process thereof |
US5843796A (en) * | 1995-09-11 | 1998-12-01 | Delco Electronics Corporation | Method of making an insulated gate bipolar transistor with high-energy P+ im |
DE69531783T2 (de) * | 1995-10-09 | 2004-07-15 | Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno - Corimme | Herstellungsverfahren für Leistungsanordnung mit Schutzring |
TW344130B (en) * | 1995-10-11 | 1998-11-01 | Int Rectifier Corp | Termination structure for semiconductor device and process for its manufacture |
DE69534919T2 (de) | 1995-10-30 | 2007-01-25 | Stmicroelectronics S.R.L., Agrate Brianza | Leistungsvorrichtung in MOS-Technologie mit einer einzigen kritischen Größe |
EP0772241B1 (fr) | 1995-10-30 | 2004-06-09 | STMicroelectronics S.r.l. | Dispositif de puissance à haute densité en technologie MOS |
US6228719B1 (en) | 1995-11-06 | 2001-05-08 | Stmicroelectronics S.R.L. | MOS technology power device with low output resistance and low capacitance, and related manufacturing process |
EP0782201B1 (fr) * | 1995-12-28 | 2000-08-30 | STMicroelectronics S.r.l. | Structure intégrée d'un dispositif de puissance en technologie MOS |
US5879968A (en) * | 1996-11-18 | 1999-03-09 | International Rectifier Corporation | Process for manufacture of a P-channel MOS gated device with base implant through the contact window |
US5854503A (en) * | 1996-11-19 | 1998-12-29 | Integrated Device Technology, Inc. | Maximization of low dielectric constant material between interconnect traces of a semiconductor circuit |
KR19980060634A (ko) * | 1996-12-31 | 1998-10-07 | 김영환 | 모스 전계효과 트랜지스터의 제조방법 |
DE19706282A1 (de) * | 1997-02-18 | 1998-08-20 | Siemens Ag | Verfahren zur Erzeugung einer Transistorstruktur |
DE19832329A1 (de) * | 1997-07-31 | 1999-02-04 | Siemens Ag | Verfahren zur Strukturierung von Halbleitern mit hoher Präzision, guter Homogenität und Reproduzierbarkeit |
US6537899B2 (en) * | 1997-09-16 | 2003-03-25 | Sanyo Electric Co., Ltd. | Semiconductor device and a method of fabricating the same |
DE19840402C2 (de) * | 1997-12-12 | 2003-07-31 | Nat Semiconductor Corp | Verfahren zum Herstellen einer Struktur eines DMOS-Leistungselementes und Struktur eines DMOS-Leistungselementes |
DE19918198B4 (de) * | 1998-04-23 | 2008-04-17 | International Rectifier Corp., El Segundo | Struktur eines P-Kanal-Graben-MOSFETs |
US6255180B1 (en) * | 1998-05-14 | 2001-07-03 | Cypress Semiconductor Corporation | Semiconductor device with outwardly tapered sidewall spacers and method for forming same |
EP0961325B1 (fr) | 1998-05-26 | 2008-05-07 | STMicroelectronics S.r.l. | Dispositif de puissance en technologie MOS à haute densité d'intégration |
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CN108933167B (zh) * | 2017-05-22 | 2022-05-20 | 比亚迪半导体股份有限公司 | 半导体功率器件及其制作方法 |
CN109300847B (zh) * | 2017-07-25 | 2021-03-09 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法 |
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CN117219666B (zh) * | 2023-11-07 | 2024-01-26 | 湖北九峰山实验室 | 一种具有双触发栅电极的氧化镓异质结晶闸管及其制备方法 |
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DE3402867A1 (de) * | 1984-01-27 | 1985-08-01 | Siemens AG, 1000 Berlin und 8000 München | Halbleiterbauelement mit kontaktloch |
EP0227894A3 (fr) * | 1985-12-19 | 1988-07-13 | SILICONIX Incorporated | Transistor DMOS vertical à haute densité d'intégration |
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DE4137341C1 (fr) * | 1991-11-13 | 1993-04-29 | Siemens Ag, 8000 Muenchen, De | |
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-
1994
- 1994-09-01 US US08/299,533 patent/US5795793A/en not_active Expired - Lifetime
-
1995
- 1995-08-17 HU HU9701354A patent/HUT76792A/hu unknown
- 1995-08-17 KR KR1019970701384A patent/KR100295631B1/ko not_active IP Right Cessation
- 1995-08-17 CZ CZ97629A patent/CZ62997A3/cs unknown
- 1995-08-17 EP EP06010237A patent/EP1686616A3/fr not_active Withdrawn
- 1995-08-17 CA CA002199013A patent/CA2199013A1/fr not_active Abandoned
- 1995-08-17 BR BR9508883A patent/BR9508883A/pt not_active Application Discontinuation
- 1995-08-17 DE DE69535441T patent/DE69535441T2/de not_active Expired - Lifetime
- 1995-08-17 JP JP50879796A patent/JP3527247B2/ja not_active Expired - Lifetime
- 1995-08-17 CN CNB951957783A patent/CN1311526C/zh not_active Expired - Lifetime
- 1995-08-17 PL PL95319098A patent/PL178316B1/pl not_active IP Right Cessation
- 1995-08-17 EP EP95929600A patent/EP0777910B1/fr not_active Expired - Lifetime
- 1995-08-17 AT AT95929600T patent/ATE358331T1/de not_active IP Right Cessation
- 1995-08-17 WO PCT/US1995/010498 patent/WO1996007200A1/fr active IP Right Grant
- 1995-08-25 TW TW084108860A patent/TW280944B/zh not_active IP Right Cessation
- 1995-08-31 SG SG1995001261A patent/SG52166A1/en unknown
-
1996
- 1996-10-08 US US08/727,142 patent/US5731604A/en not_active Expired - Lifetime
-
1997
- 1997-02-28 FI FI970850A patent/FI970850A/fi unknown
- 1997-02-28 NO NO970934A patent/NO970934L/no not_active Application Discontinuation
-
2000
- 2000-05-24 JP JP2000153208A patent/JP3416617B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR970705832A (ko) | 1997-10-09 |
MX9701579A (es) | 1998-03-31 |
JP3527247B2 (ja) | 2004-05-17 |
CN1161758A (zh) | 1997-10-08 |
JPH10505198A (ja) | 1998-05-19 |
US5731604A (en) | 1998-03-24 |
EP0777910A4 (fr) | 1998-10-07 |
EP0777910A1 (fr) | 1997-06-11 |
PL319098A1 (en) | 1997-07-21 |
FI970850A (fi) | 1997-04-24 |
EP0777910B1 (fr) | 2007-03-28 |
TW280944B (fr) | 1996-07-11 |
NO970934L (no) | 1997-04-24 |
AU3464395A (en) | 1996-03-22 |
WO1996007200A1 (fr) | 1996-03-07 |
DE69535441D1 (de) | 2007-05-10 |
ATE358331T1 (de) | 2007-04-15 |
EP1686616A3 (fr) | 2009-03-18 |
JP2000349093A (ja) | 2000-12-15 |
CA2199013A1 (fr) | 1995-08-17 |
EP1686616A2 (fr) | 2006-08-02 |
HUT76792A (en) | 1997-11-28 |
AU698654B2 (en) | 1998-11-05 |
FI970850A0 (fi) | 1997-02-28 |
DE69535441T2 (de) | 2008-04-24 |
KR100295631B1 (ko) | 2001-10-25 |
US5795793A (en) | 1998-08-18 |
CN1311526C (zh) | 2007-04-18 |
PL178316B1 (pl) | 2000-04-28 |
BR9508883A (pt) | 1997-12-30 |
NO970934D0 (no) | 1997-02-28 |
JP3416617B2 (ja) | 2003-06-16 |
CZ62997A3 (en) | 1997-11-12 |
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