ITMI20042243A1 - Processo per la realizzazione di un dispositivo mos di potenza ad alta densita' di integrazione - Google Patents
Processo per la realizzazione di un dispositivo mos di potenza ad alta densita' di integrazioneInfo
- Publication number
- ITMI20042243A1 ITMI20042243A1 IT002243A ITMI20042243A ITMI20042243A1 IT MI20042243 A1 ITMI20042243 A1 IT MI20042243A1 IT 002243 A IT002243 A IT 002243A IT MI20042243 A ITMI20042243 A IT MI20042243A IT MI20042243 A1 ITMI20042243 A1 IT MI20042243A1
- Authority
- IT
- Italy
- Prior art keywords
- realization
- high density
- power device
- density mos
- intension
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28123—Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects
- H01L21/2815—Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects part or whole of the electrode is a sidewall spacer or made by a similar technique, e.g. transformation under mask, plating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
- H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
- H01L29/4933—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement with a silicide layer contacting the silicon layer, e.g. Polycide gate
Priority Applications (10)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT002243A ITMI20042243A1 (it) | 2004-11-19 | 2004-11-19 | Processo per la realizzazione di un dispositivo mos di potenza ad alta densita' di integrazione |
EP05025287A EP1659637B1 (en) | 2004-11-19 | 2005-11-18 | Method of manufacturing a power MOS device |
DE602005025845T DE602005025845D1 (de) | 2004-11-19 | 2005-11-18 | Verfahren zur Herstellung einer MOS-Leistungsanordnung |
EP10011934A EP2302684A3 (en) | 2004-11-19 | 2005-11-18 | Power MOS device |
US11/285,759 US7569883B2 (en) | 2004-11-19 | 2005-11-21 | Switching-controlled power MOS electronic device |
US11/285,741 US7875936B2 (en) | 2004-11-19 | 2005-11-21 | Power MOS electronic device and corresponding realizing method |
US11/285,742 US7601610B2 (en) | 2004-11-19 | 2005-11-21 | Method for manufacturing a high integration density power MOS device |
US12/551,999 US8013384B2 (en) | 2004-11-19 | 2009-09-01 | Method for manufacturing a high integration density power MOS device |
US12/967,845 US8420487B2 (en) | 2004-11-19 | 2010-12-14 | Power MOS electronic device and corresponding realizing method |
US12/967,861 US8482085B2 (en) | 2004-11-19 | 2010-12-14 | Power MOS electronic device and corresponding realizing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT002243A ITMI20042243A1 (it) | 2004-11-19 | 2004-11-19 | Processo per la realizzazione di un dispositivo mos di potenza ad alta densita' di integrazione |
Publications (1)
Publication Number | Publication Date |
---|---|
ITMI20042243A1 true ITMI20042243A1 (it) | 2005-02-19 |
Family
ID=36088155
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT002243A ITMI20042243A1 (it) | 2004-11-19 | 2004-11-19 | Processo per la realizzazione di un dispositivo mos di potenza ad alta densita' di integrazione |
Country Status (4)
Country | Link |
---|---|
US (2) | US7601610B2 (it) |
EP (2) | EP1659637B1 (it) |
DE (1) | DE602005025845D1 (it) |
IT (1) | ITMI20042243A1 (it) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9178054B2 (en) | 2013-12-09 | 2015-11-03 | Micrel, Inc. | Planar vertical DMOS transistor with reduced gate charge |
US9184278B2 (en) * | 2013-12-09 | 2015-11-10 | Micrel, Inc. | Planar vertical DMOS transistor with a conductive spacer structure as gate |
US9607635B1 (en) * | 2016-04-22 | 2017-03-28 | International Business Machines Corporation | Current perpendicular-to-plane sensors having hard spacers |
US9947348B1 (en) | 2017-02-28 | 2018-04-17 | International Business Machines Corporation | Tunnel magnetoresistive sensor having leads supporting three-dimensional current flow |
US10803889B2 (en) | 2019-02-21 | 2020-10-13 | International Business Machines Corporation | Apparatus with data reader sensors more recessed than servo reader sensor |
US11074930B1 (en) | 2020-05-11 | 2021-07-27 | International Business Machines Corporation | Read transducer structure having an embedded wear layer between thin and thick shield portions |
US11114117B1 (en) | 2020-05-20 | 2021-09-07 | International Business Machines Corporation | Process for manufacturing magnetic head having a servo read transducer structure with dielectric gap liner and a data read transducer structure with an embedded wear layer between thin and thick shield portions |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4055884A (en) | 1976-12-13 | 1977-11-01 | International Business Machines Corporation | Fabrication of power field effect transistors and the resulting structures |
US4318759A (en) * | 1980-07-21 | 1982-03-09 | Data General Corporation | Retro-etch process for integrated circuits |
US4748103A (en) * | 1986-03-21 | 1988-05-31 | Advanced Power Technology | Mask-surrogate semiconductor process employing dopant protective region |
EP0518418A1 (en) * | 1991-06-10 | 1992-12-16 | Koninklijke Philips Electronics N.V. | Method of manufacturing a semiconductor device whereby field oxide regions are formed in a surface of a silicon body through oxidation |
US5430314A (en) | 1992-04-23 | 1995-07-04 | Siliconix Incorporated | Power device with buffered gate shield region |
EP1408542A3 (en) | 1994-07-14 | 2009-01-21 | STMicroelectronics S.r.l. | High-speed MOS-technology power device integrated structure, and related manufacturing process |
US5795793A (en) * | 1994-09-01 | 1998-08-18 | International Rectifier Corporation | Process for manufacture of MOS gated device with reduced mask count |
US5510281A (en) * | 1995-03-20 | 1996-04-23 | General Electric Company | Method of fabricating a self-aligned DMOS transistor device using SiC and spacers |
JP3166148B2 (ja) | 1995-07-11 | 2001-05-14 | 横河電機株式会社 | 半導体装置 |
EP0772242B1 (en) * | 1995-10-30 | 2006-04-05 | STMicroelectronics S.r.l. | Single feature size MOS technology power device |
DE69631524T2 (de) | 1996-07-05 | 2004-10-07 | St Microelectronics Srl | Asymmetrische MOS-Technologie-Leistungsanordnung |
US6025230A (en) * | 1997-11-06 | 2000-02-15 | Mageposer Semiconductor Corporation | High speed MOSFET power device with enhanced ruggedness fabricated by simplified processes |
US6187694B1 (en) * | 1997-11-10 | 2001-02-13 | Intel Corporation | Method of fabricating a feature in an integrated circuit using two edge definition layers and a spacer |
GB9726829D0 (en) | 1997-12-19 | 1998-02-18 | Philips Electronics Nv | Power semiconductor devices |
US6107649A (en) * | 1998-06-10 | 2000-08-22 | Rutgers, The State University | Field-controlled high-power semiconductor devices |
US6215152B1 (en) * | 1998-08-05 | 2001-04-10 | Cree, Inc. | MOSFET having self-aligned gate and buried shield and method of making same |
KR20000051294A (ko) * | 1999-01-20 | 2000-08-16 | 김덕중 | 전기적 특성이 향상된 디모스 전계 효과 트랜지스터 및 그 제조 방법 |
JP4917709B2 (ja) | 2000-03-06 | 2012-04-18 | ローム株式会社 | 半導体装置 |
US6710405B2 (en) | 2001-01-17 | 2004-03-23 | Ixys Corporation | Non-uniform power semiconductor device |
US6756644B2 (en) * | 2001-03-28 | 2004-06-29 | International Rectifier Corporation | Ultra low QGD power MOSFET |
DE10131917A1 (de) * | 2001-07-02 | 2003-01-23 | Infineon Technologies Ag | Verfahren zur Erzeugung einer stufenförmigen Struktur auf einem Substrat |
US6706591B1 (en) * | 2002-01-22 | 2004-03-16 | Taiwan Semiconductor Manufacturing Company | Method of forming a stacked capacitor structure with increased surface area for a DRAM device |
US7045845B2 (en) * | 2002-08-16 | 2006-05-16 | Semiconductor Components Industries, L.L.C. | Self-aligned vertical gate semiconductor device |
US6979863B2 (en) * | 2003-04-24 | 2005-12-27 | Cree, Inc. | Silicon carbide MOSFETs with integrated antiparallel junction barrier Schottky free wheeling diodes and methods of fabricating the same |
JP4179147B2 (ja) | 2003-11-28 | 2008-11-12 | 株式会社デンソー | 炭化珪素半導体装置 |
US7105410B2 (en) * | 2004-04-09 | 2006-09-12 | Analog And Power Electronics Corp. | Contact process and structure for a semiconductor device |
US20060086974A1 (en) | 2004-10-26 | 2006-04-27 | Power Integrations, Inc. | Integrated circuit with multi-length power transistor segments |
-
2004
- 2004-11-19 IT IT002243A patent/ITMI20042243A1/it unknown
-
2005
- 2005-11-18 EP EP05025287A patent/EP1659637B1/en not_active Expired - Fee Related
- 2005-11-18 EP EP10011934A patent/EP2302684A3/en not_active Withdrawn
- 2005-11-18 DE DE602005025845T patent/DE602005025845D1/de active Active
- 2005-11-21 US US11/285,742 patent/US7601610B2/en not_active Expired - Fee Related
-
2009
- 2009-09-01 US US12/551,999 patent/US8013384B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US8013384B2 (en) | 2011-09-06 |
DE602005025845D1 (de) | 2011-02-24 |
EP1659637B1 (en) | 2011-01-12 |
EP1659637A2 (en) | 2006-05-24 |
EP2302684A2 (en) | 2011-03-30 |
US20090321826A1 (en) | 2009-12-31 |
EP2302684A3 (en) | 2012-03-14 |
EP1659637A3 (en) | 2006-07-19 |
US20060138537A1 (en) | 2006-06-29 |
US7601610B2 (en) | 2009-10-13 |
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