TW284914B - Fabrication method of metal oxide semiconductor field effect transistor (MOSFET) - Google Patents

Fabrication method of metal oxide semiconductor field effect transistor (MOSFET)

Info

Publication number
TW284914B
TW284914B TW85102583A TW85102583A TW284914B TW 284914 B TW284914 B TW 284914B TW 85102583 A TW85102583 A TW 85102583A TW 85102583 A TW85102583 A TW 85102583A TW 284914 B TW284914 B TW 284914B
Authority
TW
Taiwan
Prior art keywords
insulator
forming
mosfet
metal oxide
oxide semiconductor
Prior art date
Application number
TW85102583A
Other languages
Chinese (zh)
Inventor
Shann-Pyng Chyn
Geeng-Lih Lin
Original Assignee
Ind Tech Res Inst
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ind Tech Res Inst filed Critical Ind Tech Res Inst
Priority to TW85102583A priority Critical patent/TW284914B/en
Application granted granted Critical
Publication of TW284914B publication Critical patent/TW284914B/en

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

A fabrication method of metal oxide semiconductor field effecttransistor (MOSFET) comprises of: supplying one silicon substrate, and defining active region on the silicon substrate; forming one gate; forming one first insulator; forming one opening in the first insulator; with the first insulator as mask performing ion implantation so as to forming one initial voltage adjustment area and one punch through voltage adjustment area on silicin substrate below the opening; forming one second insulator above the first insulator; removing one portion of the second insulator to leave only second insulator portion in the opening; removing the first insulator; with the second insulator as mask forming one gate; forming drain/source.
TW85102583A 1996-02-29 1996-02-29 Fabrication method of metal oxide semiconductor field effect transistor (MOSFET) TW284914B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW85102583A TW284914B (en) 1996-02-29 1996-02-29 Fabrication method of metal oxide semiconductor field effect transistor (MOSFET)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW85102583A TW284914B (en) 1996-02-29 1996-02-29 Fabrication method of metal oxide semiconductor field effect transistor (MOSFET)

Publications (1)

Publication Number Publication Date
TW284914B true TW284914B (en) 1996-09-01

Family

ID=51397888

Family Applications (1)

Application Number Title Priority Date Filing Date
TW85102583A TW284914B (en) 1996-02-29 1996-02-29 Fabrication method of metal oxide semiconductor field effect transistor (MOSFET)

Country Status (1)

Country Link
TW (1) TW284914B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7604390B2 (en) 2006-11-02 2009-10-20 Au Optronics Corp. Supporting structure and fixing component having a through-hole and opening for pin structure engagement and backlight module using the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7604390B2 (en) 2006-11-02 2009-10-20 Au Optronics Corp. Supporting structure and fixing component having a through-hole and opening for pin structure engagement and backlight module using the same

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees