TW284914B - Fabrication method of metal oxide semiconductor field effect transistor (MOSFET) - Google Patents
Fabrication method of metal oxide semiconductor field effect transistor (MOSFET)Info
- Publication number
- TW284914B TW284914B TW85102583A TW85102583A TW284914B TW 284914 B TW284914 B TW 284914B TW 85102583 A TW85102583 A TW 85102583A TW 85102583 A TW85102583 A TW 85102583A TW 284914 B TW284914 B TW 284914B
- Authority
- TW
- Taiwan
- Prior art keywords
- insulator
- forming
- mosfet
- metal oxide
- oxide semiconductor
- Prior art date
Links
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
A fabrication method of metal oxide semiconductor field effecttransistor (MOSFET) comprises of: supplying one silicon substrate, and defining active region on the silicon substrate; forming one gate; forming one first insulator; forming one opening in the first insulator; with the first insulator as mask performing ion implantation so as to forming one initial voltage adjustment area and one punch through voltage adjustment area on silicin substrate below the opening; forming one second insulator above the first insulator; removing one portion of the second insulator to leave only second insulator portion in the opening; removing the first insulator; with the second insulator as mask forming one gate; forming drain/source.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW85102583A TW284914B (en) | 1996-02-29 | 1996-02-29 | Fabrication method of metal oxide semiconductor field effect transistor (MOSFET) |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW85102583A TW284914B (en) | 1996-02-29 | 1996-02-29 | Fabrication method of metal oxide semiconductor field effect transistor (MOSFET) |
Publications (1)
Publication Number | Publication Date |
---|---|
TW284914B true TW284914B (en) | 1996-09-01 |
Family
ID=51397888
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW85102583A TW284914B (en) | 1996-02-29 | 1996-02-29 | Fabrication method of metal oxide semiconductor field effect transistor (MOSFET) |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW284914B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7604390B2 (en) | 2006-11-02 | 2009-10-20 | Au Optronics Corp. | Supporting structure and fixing component having a through-hole and opening for pin structure engagement and backlight module using the same |
-
1996
- 1996-02-29 TW TW85102583A patent/TW284914B/en not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7604390B2 (en) | 2006-11-02 | 2009-10-20 | Au Optronics Corp. | Supporting structure and fixing component having a through-hole and opening for pin structure engagement and backlight module using the same |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |