KR970009278B1 - Method for manufacturing a semiconductor device - Google Patents
Method for manufacturing a semiconductor device Download PDFInfo
- Publication number
- KR970009278B1 KR970009278B1 KR93015488A KR930015488A KR970009278B1 KR 970009278 B1 KR970009278 B1 KR 970009278B1 KR 93015488 A KR93015488 A KR 93015488A KR 930015488 A KR930015488 A KR 930015488A KR 970009278 B1 KR970009278 B1 KR 970009278B1
- Authority
- KR
- South Korea
- Prior art keywords
- forming
- region
- film
- oxide
- nitride film
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 150000004767 nitrides Chemical class 0.000 abstract 5
- 238000005530 etching Methods 0.000 abstract 2
- 238000005468 ion implantation Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 229920005591 polysilicon Polymers 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
forming a field oxide defining an active region in a well of a semiconductor substrate; forming a gate electrode, a first pad oxide and a first nitride film by etching a polysilicon film, an oxide film and a nitride film; forming a second pad oxide and a second nitride film by etching an oxide film and a nitride film on the side wall of the gate electrode; forming an N+ conduction region which is to be an N+ source/drain region by using the first, second pad oxide and the first, second nitride film as an ion implantation mask; forming a thick oxide film on top of the N+ conduction region; forming an N- conduction region which is to be an N- source/drain region; and forming an N+ conduction region which is to be a pocket region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR93015488A KR970009278B1 (en) | 1993-08-10 | 1993-08-10 | Method for manufacturing a semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR93015488A KR970009278B1 (en) | 1993-08-10 | 1993-08-10 | Method for manufacturing a semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR950007165A KR950007165A (en) | 1995-03-21 |
| KR970009278B1 true KR970009278B1 (en) | 1997-06-09 |
Family
ID=19361043
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR93015488A KR970009278B1 (en) | 1993-08-10 | 1993-08-10 | Method for manufacturing a semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR970009278B1 (en) |
-
1993
- 1993-08-10 KR KR93015488A patent/KR970009278B1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR950007165A (en) | 1995-03-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| G160 | Decision to publish patent application | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20121022 Year of fee payment: 16 |
|
| EXPY | Expiration of term |