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Application filed by Lg Semicon Co LtdfiledCriticalLg Semicon Co Ltd
Priority to KR93030363ApriorityCriticalpatent/KR970008818B1/en
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Publication of KR970008818B1publicationCriticalpatent/KR970008818B1/en
The semiconductor device manufacturing method comprises the steps of: forming a gate electrode pattern with gate-oxide and polysilicon on the silicon wafer; ion implantation to form a light-doped source-drain region at the side of the gate pattern; forming a metal layer which directly contacts the gate electrode surface; by heat-treatment, forming a silicide film on the gate surface; on the side wall of the gate electrode covered with the silicide, forming a side wall isolation, and forming a heavy-doped drain and source region by implanting high-density ion.