KR970003834B1 - Manufacture for thin film transistor - Google Patents

Manufacture for thin film transistor Download PDF

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Publication number
KR970003834B1
KR970003834B1 KR93020630A KR930020630A KR970003834B1 KR 970003834 B1 KR970003834 B1 KR 970003834B1 KR 93020630 A KR93020630 A KR 93020630A KR 930020630 A KR930020630 A KR 930020630A KR 970003834 B1 KR970003834 B1 KR 970003834B1
Authority
KR
South Korea
Prior art keywords
forming
thin film
gate
film transistor
manufacture
Prior art date
Application number
KR93020630A
Other languages
Korean (ko)
Other versions
KR950012645A (en
Inventor
Myung-Ha Hwang
Original Assignee
Lg Semicon Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lg Semicon Co Ltd filed Critical Lg Semicon Co Ltd
Priority to KR93020630A priority Critical patent/KR970003834B1/en
Publication of KR950012645A publication Critical patent/KR950012645A/en
Application granted granted Critical
Publication of KR970003834B1 publication Critical patent/KR970003834B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Thin Film Transistor (AREA)

Abstract

The present invention relates to a method of making a bottom gate thin film transistor (TFT) that can increase on-current and ON/OFF ratio as well. This method includes the steps of forming a gate line on a semiconductor substrate and forming a gate insulating film; forming a side wall spacer doped with impurity ions on the gate/gate insulating film; depositing a body polysilicon all over the surface and performing recrystallization and thermal treatment to form an LDD by impurity diffusion; and performing high-density ion implantation with
KR93020630A 1993-10-06 1993-10-06 Manufacture for thin film transistor KR970003834B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR93020630A KR970003834B1 (en) 1993-10-06 1993-10-06 Manufacture for thin film transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR93020630A KR970003834B1 (en) 1993-10-06 1993-10-06 Manufacture for thin film transistor

Publications (2)

Publication Number Publication Date
KR950012645A KR950012645A (en) 1995-05-16
KR970003834B1 true KR970003834B1 (en) 1997-03-22

Family

ID=19365326

Family Applications (1)

Application Number Title Priority Date Filing Date
KR93020630A KR970003834B1 (en) 1993-10-06 1993-10-06 Manufacture for thin film transistor

Country Status (1)

Country Link
KR (1) KR970003834B1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1890322A3 (en) * 2006-08-15 2012-02-15 Kovio, Inc. Printed dopant layers

Also Published As

Publication number Publication date
KR950012645A (en) 1995-05-16

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