EP0602250A4 - Thin film transistor, solid-state device, display device, and method for manufacturing thin film transistor. - Google Patents

Thin film transistor, solid-state device, display device, and method for manufacturing thin film transistor.

Info

Publication number
EP0602250A4
EP0602250A4 EP93913567A EP93913567A EP0602250A4 EP 0602250 A4 EP0602250 A4 EP 0602250A4 EP 93913567 A EP93913567 A EP 93913567A EP 93913567 A EP93913567 A EP 93913567A EP 0602250 A4 EP0602250 A4 EP 0602250A4
Authority
EP
European Patent Office
Prior art keywords
thin film
film transistor
solid
region
display device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP93913567A
Other languages
German (de)
French (fr)
Other versions
EP0602250B1 (en
EP0602250A1 (en
Inventor
Satoshi Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of EP0602250A1 publication Critical patent/EP0602250A1/en
Publication of EP0602250A4 publication Critical patent/EP0602250A4/en
Application granted granted Critical
Publication of EP0602250B1 publication Critical patent/EP0602250B1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1251—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs comprising TFTs having a different architecture, e.g. top- and bottom gate TFTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
    • H01L29/78627—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile with a significant overlap between the lightly doped drain and the gate electrode, e.g. GOLDD

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thin Film Transistor (AREA)

Abstract

A thin film transistor having improved off-current characteristic and other electric characteristics, comprises an n- source region (112) and an n- drain region (113) which are made up of an n- type silicon film (low concentration region) having a thickness of approximately 400 Å. The silicon film is formed by crystallizing amorphous silicon by, for instance, an SPC technique. The crystallization is executed after the introduction of impurities, serving to activate the impurities. A gate electrode (116) is a metallic electrode and is formed after the formation of the n- source region (112) and n- drain region (113). The gate electrode (116), the n- source region (112), and the n- drain region (113) are not formed in a self-alignment manner.
EP93913567A 1992-06-24 1993-06-23 Thin film transistor, display device, and method for manufacturing thin film transistor Expired - Lifetime EP0602250B1 (en)

Applications Claiming Priority (10)

Application Number Priority Date Filing Date Title
JP166021/92 1992-06-24
JP16602192 1992-06-24
JP16602192 1992-06-24
JP31533192 1992-11-25
JP315331/92 1992-11-25
JP31533192 1992-11-25
JP32531592 1992-12-04
JP325315/92 1992-12-04
JP32531592 1992-12-04
PCT/JP1993/000849 WO1994000882A1 (en) 1992-06-24 1993-06-23 Thin film transistor, solid-state device, display device, and method for manufacturing thin film transistor

Publications (3)

Publication Number Publication Date
EP0602250A1 EP0602250A1 (en) 1994-06-22
EP0602250A4 true EP0602250A4 (en) 1996-01-03
EP0602250B1 EP0602250B1 (en) 1999-08-25

Family

ID=27322616

Family Applications (1)

Application Number Title Priority Date Filing Date
EP93913567A Expired - Lifetime EP0602250B1 (en) 1992-06-24 1993-06-23 Thin film transistor, display device, and method for manufacturing thin film transistor

Country Status (6)

Country Link
US (2) US5508216A (en)
EP (1) EP0602250B1 (en)
KR (1) KR100309934B1 (en)
DE (1) DE69326123T2 (en)
TW (1) TW268133B (en)
WO (1) WO1994000882A1 (en)

Families Citing this family (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5953582A (en) * 1993-02-10 1999-09-14 Seiko Epson Corporation Active matrix panel manufacturing method including TFTS having variable impurity concentration levels
DE19500380C2 (en) * 1994-05-20 2001-05-17 Mitsubishi Electric Corp Active matrix liquid crystal display and manufacturing method therefor
JP3403812B2 (en) * 1994-05-31 2003-05-06 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device using thin film transistor
US6133620A (en) * 1995-05-26 2000-10-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and process for fabricating the same
US5915174A (en) * 1994-09-30 1999-06-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for producing the same
JP3494720B2 (en) * 1994-11-01 2004-02-09 株式会社半導体エネルギー研究所 Semiconductor device and manufacturing method thereof, and active matrix type liquid crystal display and image sensor
KR0146899B1 (en) * 1994-11-28 1998-09-15 김광호 Liquid crystal thin film transistor elements and manufacturing method thereof
KR0145900B1 (en) * 1995-02-11 1998-09-15 김광호 Thin film transistor liquid crystal display elements and its manufacturing method
JP3292657B2 (en) * 1995-04-10 2002-06-17 キヤノン株式会社 Thin film transistor and method for manufacturing liquid crystal display device using the same
US6933182B1 (en) * 1995-04-20 2005-08-23 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device and manufacturing system thereof
KR100218500B1 (en) 1995-05-17 1999-09-01 윤종용 Silicone film and manufacturing method thereof, and thin-film transistor and manufacturing method thereof
JPH0955499A (en) * 1995-08-11 1997-02-25 Mitsubishi Electric Corp Semiconductor device and its manufacture
KR100192593B1 (en) * 1996-02-21 1999-07-01 윤종용 Fabrication method of polysilicon thin film transistor
JP3527009B2 (en) * 1996-03-21 2004-05-17 株式会社半導体エネルギー研究所 Semiconductor device and manufacturing method thereof
JP3525316B2 (en) * 1996-11-12 2004-05-10 株式会社半導体エネルギー研究所 Active matrix display
US6140160A (en) 1997-07-28 2000-10-31 Micron Technology, Inc. Method for fabricating a simplified CMOS polysilicon thin film transistor and resulting structure
KR100269600B1 (en) * 1997-09-24 2000-10-16 김영환 fabricatinf method of thin film transistor
JPH11112002A (en) * 1997-10-07 1999-04-23 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacture therefor
KR19990039940A (en) * 1997-11-15 1999-06-05 구자홍 Method of manufacturing thin film transistor
US6338987B1 (en) * 1998-08-27 2002-01-15 Lg.Philips Lcd Co., Ltd. Method for forming polycrystalline silicon layer and method for fabricating thin film transistor
JP4536186B2 (en) * 1998-11-16 2010-09-01 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US6501098B2 (en) 1998-11-25 2002-12-31 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device
KR20000033832A (en) * 1998-11-26 2000-06-15 윤종용 Method for manufacturing polysilicon thin film transistor substrate of liquid crystal display device
JP4641582B2 (en) * 1998-12-18 2011-03-02 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US6469317B1 (en) 1998-12-18 2002-10-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
US6576926B1 (en) 1999-02-23 2003-06-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method thereof
KR100654927B1 (en) * 1999-03-04 2006-12-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 semiconductor device and manufacturing method thereof
US6531713B1 (en) 1999-03-19 2003-03-11 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and manufacturing method thereof
TW444257B (en) 1999-04-12 2001-07-01 Semiconductor Energy Lab Semiconductor device and method for fabricating the same
KR100333276B1 (en) 1999-05-20 2002-04-24 구본준, 론 위라하디락사 TFT of LCD device and the same methode
US7245018B1 (en) * 1999-06-22 2007-07-17 Semiconductor Energy Laboratory Co., Ltd. Wiring material, semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof
TW543206B (en) * 1999-06-28 2003-07-21 Semiconductor Energy Lab EL display device and electronic device
JP2001015553A (en) * 1999-06-29 2001-01-19 Rohm Co Ltd Manufacture of semiconductor device
US6384427B1 (en) 1999-10-29 2002-05-07 Semiconductor Energy Laboratory Co., Ltd. Electronic device
JP4727029B2 (en) * 1999-11-29 2011-07-20 株式会社半導体エネルギー研究所 EL display device, electric appliance, and semiconductor element substrate for EL display device
US7023021B2 (en) 2000-02-22 2006-04-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US6274465B1 (en) * 2000-03-30 2001-08-14 International Business Machines Corporataion DC electric field assisted anneal
SG100658A1 (en) 2000-03-30 2003-12-26 Ibm Dc or ac electric field business anneal
TWI286338B (en) * 2000-05-12 2007-09-01 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
CN1462481A (en) * 2001-05-18 2003-12-17 三洋电机株式会社 Thin film transistor and active matrix type display unit and production method thereof
JP5038560B2 (en) * 2001-08-01 2012-10-03 ゲットナー・ファンデーション・エルエルシー FIELD EFFECT TRANSISTOR AND ITS MANUFACTURING METHOD, AND LIQUID CRYSTAL DISPLAY DEVICE USING THE TRANSISTOR AND ITS MANUFACTURING METHOD
JP4256087B2 (en) * 2001-09-27 2009-04-22 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US6638776B2 (en) * 2002-02-15 2003-10-28 Lsi Logic Corporation Thermal characterization compensation
JP4271413B2 (en) * 2002-06-28 2009-06-03 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
KR100623230B1 (en) * 2003-11-29 2006-09-18 삼성에스디아이 주식회사 Method of fabricating Thin Film Transistor
JP4211644B2 (en) * 2004-03-15 2009-01-21 セイコーエプソン株式会社 Manufacturing method of electro-optical device
TWI267213B (en) * 2006-01-27 2006-11-21 Ind Tech Res Inst Organic light emitting device with integrated color filter and method of manufacturing the same
CN101501748B (en) * 2006-04-19 2012-12-05 伊格尼斯创新有限公司 Stable driving scheme for active matrix displays
US8896065B2 (en) * 2008-04-14 2014-11-25 Sharp Laboratories Of America, Inc. Top gate thin film transistor with independent field control for off-current suppression
JP5234333B2 (en) * 2008-05-28 2013-07-10 Ｎｌｔテクノロジー株式会社 Gate line driving circuit, active matrix substrate, and liquid crystal display device
JP2015065202A (en) 2013-09-24 2015-04-09 株式会社東芝 Semiconductor element, display device, method of manufacturing semiconductor element, and method of manufacturing display device
KR102324764B1 (en) * 2014-11-21 2021-11-10 삼성디스플레이 주식회사 Organic light emitting diode display and manufacturing method thereof
US9508860B2 (en) * 2014-12-31 2016-11-29 Shenzhen China Star Optoelectronics Technology Co., Ltd. Lateral gate electrode TFT switch and liquid crystal display device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0544229A1 (en) * 1991-11-25 1993-06-02 Casio Computer Company Limited Thin film transistor device for driving circuit and matrix circuit

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58142566A (en) * 1982-02-19 1983-08-24 Seiko Epson Corp Thin film semiconductor device
US6294796B1 (en) * 1982-04-13 2001-09-25 Seiko Epson Corporation Thin film transistors and active matrices including same
JPS58206121A (en) * 1982-05-27 1983-12-01 Toshiba Corp Manufacture of thin-film semiconductor device
JPH0697694B2 (en) * 1983-08-25 1994-11-30 セイコーエプソン株式会社 Complementary thin film transistor
JPH0740607B2 (en) * 1984-10-03 1995-05-01 ソニー株式会社 Method of manufacturing thin film transistor
JPS61104371A (en) * 1984-10-22 1986-05-22 Sony Corp Error rate measuring method
JPS61104671A (en) * 1984-10-29 1986-05-22 Sharp Corp Field effect transistor
JPS61170724A (en) * 1985-01-25 1986-08-01 Seiko Instr & Electronics Ltd Substrate for active matrix display device
JPH02246277A (en) * 1989-03-20 1990-10-02 Matsushita Electron Corp Mos transistor and manufacture thereof
JPH0783127B2 (en) * 1989-04-20 1995-09-06 三菱電機株式会社 Semiconductor device
JP2811786B2 (en) * 1989-08-22 1998-10-15 セイコーエプソン株式会社 Thin film transistor
JP2979196B2 (en) * 1990-09-05 1999-11-15 セイコーインスツルメンツ株式会社 Semiconductor substrate device for light valve and method of manufacturing the same
JPH04139764A (en) * 1990-10-01 1992-05-13 Canon Inc Manufacture of insulated gate thin film transistor
JP2794678B2 (en) * 1991-08-26 1998-09-10 株式会社 半導体エネルギー研究所 Insulated gate semiconductor device and method of manufacturing the same
US5266504A (en) * 1992-03-26 1993-11-30 International Business Machines Corporation Low temperature emitter process for high performance bipolar devices

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0544229A1 (en) * 1991-11-25 1993-06-02 Casio Computer Company Limited Thin film transistor device for driving circuit and matrix circuit

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
K. TANAKA: "Characteristics of Offset-Structure polycrystalline silicon thin film transistors", IEEE ELECTRON DEVICE LETTERS, vol. 9, no. 1, 1 January 1988 (1988-01-01), NEW YORK US, pages 23 - 25, XP001290109 *
LITTLE T W ET AL: "A 9.5 INCH, 1.3 MEGA-PIXEL LOW TEMPERATURE POLY-SI TFT-LCD FABRICATED BY SPC OF VERY THIN FILMS AND AN ECR-CVD GATE INSULATOR", PROCEEDINGS OF THE INTERNATIONAL DISPLAY RESEARCH CONFERENCE, SAN DIEGO, OCT. 15 - 17, 1991, no. CONF. 11, 15 October 1991 (1991-10-15), INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, pages 219 - 222, XP000314357 *
See also references of WO9400882A1 *

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TW268133B (en) 1996-01-11
EP0602250B1 (en) 1999-08-25
DE69326123D1 (en) 1999-09-30
DE69326123T2 (en) 1999-12-23
US5757048A (en) 1998-05-26
US5508216A (en) 1996-04-16
KR100309934B1 (en) 2002-06-20
WO1994000882A1 (en) 1994-01-06
KR940702312A (en) 1994-07-28
EP0602250A1 (en) 1994-06-22

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