JPS58206121A - Manufacture of thin-film semiconductor device - Google Patents

Manufacture of thin-film semiconductor device

Info

Publication number
JPS58206121A
JPS58206121A JP9006782A JP9006782A JPS58206121A JP S58206121 A JPS58206121 A JP S58206121A JP 9006782 A JP9006782 A JP 9006782A JP 9006782 A JP9006782 A JP 9006782A JP S58206121 A JPS58206121 A JP S58206121A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
silicon
substrate
island
film
irradiated onto
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9006782A
Inventor
Shusuke Kotake
Nobuo Mukai
Yasuhisa Oana
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/265Bombardment with radiation with high-energy radiation producing ion implantation

Abstract

PURPOSE:To promote an increase in crystal grain size of silicon and electrical activation of impurity atoms by a method wherein an island-like silicon region formed on a substrate through deposition is subjected to the ion implanting process, and an energy beam is then irradiated onto the substrate. CONSTITUTION:A silicon thin film 2 deposited on a glass substrate 1 is etched, and an SiO2 film 3 is then coated all over the surface to form an insulating film. Source and drain regions 6, 7 are selectively subjected to ion implantation 5. After removing a resist mask 4, a laser beam 8 is irradiated onto the island-like silicon region. A source electrode 9, drain electrode 10 and a gate electrode 11 are formed on the SiO2 film 3.
JP9006782A 1982-05-27 1982-05-27 Manufacture of thin-film semiconductor device Pending JPS58206121A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9006782A JPS58206121A (en) 1982-05-27 1982-05-27 Manufacture of thin-film semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9006782A JPS58206121A (en) 1982-05-27 1982-05-27 Manufacture of thin-film semiconductor device

Publications (1)

Publication Number Publication Date
JPS58206121A true true JPS58206121A (en) 1983-12-01

Family

ID=13988192

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9006782A Pending JPS58206121A (en) 1982-05-27 1982-05-27 Manufacture of thin-film semiconductor device

Country Status (1)

Country Link
JP (1) JPS58206121A (en)

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6242436A (en) * 1985-08-19 1987-02-24 Sony Corp Manufacture of semiconductor device
JPS6295874A (en) * 1985-10-23 1987-05-02 Sony Corp Manufacture of semiconductor device
JPS62299011A (en) * 1986-06-18 1987-12-26 Matsushita Electric Ind Co Ltd Annealing of polycrystalline thin-film substrate
JPS6347980A (en) * 1986-08-18 1988-02-29 Fujitsu Ltd Manufacture of thin film transistor
JPH02224255A (en) * 1989-02-27 1990-09-06 Hitachi Ltd Thin film semiconductor device and manufacture thereof
JPH0442969A (en) * 1990-06-06 1992-02-13 Matsushita Electric Ind Co Ltd Semiconductor device and manufacture thereof
WO1994000882A1 (en) * 1992-06-24 1994-01-06 Seiko Epson Corporation Thin film transistor, solid-state device, display device, and method for manufacturing thin film transistor
JPH0697443A (en) * 1991-07-12 1994-04-08 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JPH06291316A (en) * 1992-02-25 1994-10-18 Semiconductor Energy Lab Co Ltd Thin film insulated gate semiconductor device and manufacture thereof
JPH0758342A (en) * 1994-07-11 1995-03-03 Sony Corp Production of thin-film transistor
US5397718A (en) * 1992-02-21 1995-03-14 Matsushita Electric Industrial Co., Ltd. Method of manufacturing thin film transistor
US5894151A (en) * 1992-02-25 1999-04-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having reduced leakage current
US5942768A (en) * 1994-10-07 1999-08-24 Semionductor Energy Laboratory Co., Ltd. Semiconductor device having improved crystal orientation
US6028333A (en) * 1991-02-16 2000-02-22 Semiconductor Energy Laboratory Co., Ltd. Electric device, matrix device, electro-optical display device, and semiconductor memory having thin-film transistors
US6221701B1 (en) * 1984-05-18 2001-04-24 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect transistor and its manufacturing method
US6417543B1 (en) 1993-01-18 2002-07-09 Semiconductor Energy Laboratory Co., Ltd. MIS semiconductor device with sloped gate, source, and drain regions
US6709907B1 (en) 1992-02-25 2004-03-23 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a thin film transistor
JP2006019527A (en) * 2004-07-01 2006-01-19 Dainippon Printing Co Ltd Manufacturing method for polycrystalline silicon thin film, manufacturing method for thin film transistor, and substrate with silicon thin film

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5688317A (en) * 1979-12-20 1981-07-17 Fujitsu Ltd Manufacture of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5688317A (en) * 1979-12-20 1981-07-17 Fujitsu Ltd Manufacture of semiconductor device

Cited By (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6660574B1 (en) 1984-05-18 2003-12-09 Semiconductor Energy Laboratory Co., Ltd. Method of forming a semiconductor device including recombination center neutralizer
US6221701B1 (en) * 1984-05-18 2001-04-24 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect transistor and its manufacturing method
JPS6242436A (en) * 1985-08-19 1987-02-24 Sony Corp Manufacture of semiconductor device
JPS6295874A (en) * 1985-10-23 1987-05-02 Sony Corp Manufacture of semiconductor device
JPS62299011A (en) * 1986-06-18 1987-12-26 Matsushita Electric Ind Co Ltd Annealing of polycrystalline thin-film substrate
JPS6347980A (en) * 1986-08-18 1988-02-29 Fujitsu Ltd Manufacture of thin film transistor
JPH02224255A (en) * 1989-02-27 1990-09-06 Hitachi Ltd Thin film semiconductor device and manufacture thereof
JPH0442969A (en) * 1990-06-06 1992-02-13 Matsushita Electric Ind Co Ltd Semiconductor device and manufacture thereof
US6028333A (en) * 1991-02-16 2000-02-22 Semiconductor Energy Laboratory Co., Ltd. Electric device, matrix device, electro-optical display device, and semiconductor memory having thin-film transistors
JPH0697443A (en) * 1991-07-12 1994-04-08 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
US5397718A (en) * 1992-02-21 1995-03-14 Matsushita Electric Industrial Co., Ltd. Method of manufacturing thin film transistor
US6709907B1 (en) 1992-02-25 2004-03-23 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a thin film transistor
JPH06291316A (en) * 1992-02-25 1994-10-18 Semiconductor Energy Lab Co Ltd Thin film insulated gate semiconductor device and manufacture thereof
US7148542B2 (en) 1992-02-25 2006-12-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of forming the same
US5894151A (en) * 1992-02-25 1999-04-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having reduced leakage current
US7649227B2 (en) 1992-02-25 2010-01-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of forming the same
US5757048A (en) * 1992-06-24 1998-05-26 Seiko Epson Corporation Thin film transistor, solid state device, display device and manufacturing method of a thin film transistor
WO1994000882A1 (en) * 1992-06-24 1994-01-06 Seiko Epson Corporation Thin film transistor, solid-state device, display device, and method for manufacturing thin film transistor
US5508216A (en) * 1992-06-24 1996-04-16 Seiko Epson Corporation Thin film transistor, solid device, display device and manufacturing method of a thin film transistor
US6984551B2 (en) 1993-01-18 2006-01-10 Semiconductor Energy Laboratory Co., Ltd. MIS semiconductor device and method of fabricating the same
US7351624B2 (en) 1993-01-18 2008-04-01 Semiconductor Energy Laboratory Co., Ltd. MIS semiconductor device and method of fabricating the same
US6417543B1 (en) 1993-01-18 2002-07-09 Semiconductor Energy Laboratory Co., Ltd. MIS semiconductor device with sloped gate, source, and drain regions
JPH0758342A (en) * 1994-07-11 1995-03-03 Sony Corp Production of thin-film transistor
US5942768A (en) * 1994-10-07 1999-08-24 Semionductor Energy Laboratory Co., Ltd. Semiconductor device having improved crystal orientation
US6211536B1 (en) 1994-10-07 2001-04-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having improved crystal orientation
US6627487B2 (en) 1994-10-07 2003-09-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2006019527A (en) * 2004-07-01 2006-01-19 Dainippon Printing Co Ltd Manufacturing method for polycrystalline silicon thin film, manufacturing method for thin film transistor, and substrate with silicon thin film

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