JPS60245174A - Manufacture of insulated gate type semiconductor device - Google Patents

Manufacture of insulated gate type semiconductor device

Info

Publication number
JPS60245174A
JPS60245174A JP10025284A JP10025284A JPS60245174A JP S60245174 A JPS60245174 A JP S60245174A JP 10025284 A JP10025284 A JP 10025284A JP 10025284 A JP10025284 A JP 10025284A JP S60245174 A JPS60245174 A JP S60245174A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
gate electrode
layers
light
igfet
obtain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10025284A
Inventor
Shunpei Yamazaki
Original Assignee
Semiconductor Energy Lab Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409Unipolar field-effect transistors
    • H01L29/66477Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742Thin film unipolar transistors
    • H01L29/6675Amorphous silicon or polysilicon transistors
    • H01L29/66757Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02524Group 14 semiconducting materials
    • H01L21/02532Silicon, silicon germanium, germanium
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/0262Reduction or decomposition of gaseous compounds, e.g. CVD
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/268Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651Silicon transistors
    • H01L29/7866Non-monocrystalline silicon transistors
    • H01L29/78663Amorphous silicon transistors
    • H01L29/78666Amorphous silicon transistors with normal-type structure, e.g. with top gate

Abstract

PURPOSE:To obtain an IGFET having high withstand strength by passing a gate insulating film through hydrogen or halogen element-added nonsingle crystal with a gate electrode as a mask to implant an impurity, annealing it with light, and extending the crystallization to a channel region. CONSTITUTION:A laminate of nonsingle crystal semiconductor 2 which contains hydrogen of density higher than 1atom% by a CVD method and Si3N4 3 is formed on a quartz glass substrate 1, an N<+> type polysilicon gate electrode 4 is formed by a resist mask 6. P ions are implanted to form N type layers 7, 8. It is annealed with strong light 10 of mercury lamp, polycrystallized to the outside of the layers 7, 8, the bottom is approached to the substrate 1, set to channel side from the junction boundaries 17, 17' of the layers 7, 8, and the ends 15, 15' are disposed at the channel side from gate electrode ends 16, 16'. Light annealing is performed at 400 deg.C or lower. With this structure, the breakdown voltage of junction increases at the reverse bias time to obtain a high withstand IGFET.
JP10025284A 1984-05-18 1984-05-18 Manufacture of insulated gate type semiconductor device Pending JPS60245174A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10025284A JPS60245174A (en) 1984-05-18 1984-05-18 Manufacture of insulated gate type semiconductor device

Applications Claiming Priority (12)

Application Number Priority Date Filing Date Title
JP10025284A JPS60245174A (en) 1984-05-18 1984-05-18 Manufacture of insulated gate type semiconductor device
US06912498 US4727044A (en) 1984-05-18 1986-09-29 Method of making a thin film transistor with laser recrystallized source and drain
US07153477 US4959700A (en) 1984-05-18 1988-02-03 Insulated gate field effect transistor and its manufacturing method
US07707178 US5142344A (en) 1984-05-18 1991-05-24 Insulated gate field effect transistor and its manufacturing method
US07987179 US5315132A (en) 1984-05-18 1992-12-08 Insulated gate field effect transistor
US08054842 US5313077A (en) 1984-05-18 1993-04-30 Insulated gate field effect transistor and its manufacturing method
US08171769 US6660574B1 (en) 1984-05-18 1993-12-22 Method of forming a semiconductor device including recombination center neutralizer
US08473953 US5543636A (en) 1984-05-18 1995-06-07 Insulated gate field effect transistor
US08944136 US6680486B1 (en) 1984-05-18 1997-10-06 Insulated gate field effect transistor and its manufacturing method
US08947731 US6221701B1 (en) 1984-05-18 1997-10-16 Insulated gate field effect transistor and its manufacturing method
US09406791 US6734499B1 (en) 1984-05-18 1999-09-28 Operation method of semiconductor devices
US09406794 US6635520B1 (en) 1984-05-18 1999-09-28 Operation method of semiconductor devices

Publications (1)

Publication Number Publication Date
JPS60245174A true true JPS60245174A (en) 1985-12-04

Family

ID=14269029

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10025284A Pending JPS60245174A (en) 1984-05-18 1984-05-18 Manufacture of insulated gate type semiconductor device

Country Status (1)

Country Link
JP (1) JPS60245174A (en)

Cited By (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62214669A (en) * 1986-03-14 1987-09-21 Nec Corp Self-aligned amorphous silicon thin film transistor and manufacture thereof
JPH05283694A (en) * 1991-08-23 1993-10-29 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacture thereof
JPH0621096A (en) * 1991-05-11 1994-01-28 Semiconductor Energy Lab Co Ltd Manufacture of insulation gate type field effect transistor
JPH06296023A (en) * 1993-02-10 1994-10-21 Semiconductor Energy Lab Co Ltd Thin-film semiconductor device and manufacture thereof
JPH07111334A (en) * 1993-08-20 1995-04-25 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacture thereof
US5523240A (en) * 1990-05-29 1996-06-04 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a thin film transistor with a halogen doped blocking layer
US5849601A (en) * 1990-12-25 1998-12-15 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US5859445A (en) * 1990-11-20 1999-01-12 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device including thin film transistors having spoiling impurities added thereto
US5946561A (en) * 1991-03-18 1999-08-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US5962897A (en) * 1992-06-18 1999-10-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US5962870A (en) * 1991-08-26 1999-10-05 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect semiconductor devices
US6013928A (en) * 1991-08-23 2000-01-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having interlayer insulating film and method for forming the same
US6147375A (en) * 1992-02-05 2000-11-14 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device
US6204099B1 (en) 1995-02-21 2001-03-20 Semiconductor Energy Laboratory Co., Ltd. Method for producing insulated gate thin film semiconductor device
US6323069B1 (en) 1992-03-25 2001-11-27 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a thin film transistor using light irradiation to form impurity regions
US6331717B1 (en) 1993-08-12 2001-12-18 Semiconductor Energy Laboratory Co. Ltd. Insulated gate semiconductor device and process for fabricating the same
US6448577B1 (en) 1990-10-15 2002-09-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with grain boundaries
US6479329B2 (en) 1994-09-16 2002-11-12 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device
US6482752B1 (en) * 1993-10-26 2002-11-19 Semiconductor Energy Laboratory Co., Ltd. Substrate processing apparatus and method and a manufacturing method of a thin film semiconductor device
US6500704B1 (en) 1995-07-03 2002-12-31 Sanyo Electric Co., Ltd Semiconductor device, display device and method of fabricating the same
US6500703B1 (en) 1993-08-12 2002-12-31 Semicondcutor Energy Laboratory Co., Ltd. Insulated gate semiconductor device and process for fabricating the same
US6624477B1 (en) 1992-10-09 2003-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US6660575B1 (en) 1991-10-04 2003-12-09 Semiconductor Energy Laboratory Co., Ltd. Method for forming a semiconductor device
US6790714B2 (en) 1995-07-03 2004-09-14 Sanyo Electric Co., Ltd. Semiconductor device, display device and method of fabricating the same
US6797550B2 (en) 2001-12-21 2004-09-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method therefor
US6911358B2 (en) 2001-12-28 2005-06-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US7554616B1 (en) 1992-04-28 2009-06-30 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS582073A (en) * 1981-06-29 1983-01-07 Sony Corp Field effect transistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS582073A (en) * 1981-06-29 1983-01-07 Sony Corp Field effect transistor

Cited By (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62214669A (en) * 1986-03-14 1987-09-21 Nec Corp Self-aligned amorphous silicon thin film transistor and manufacture thereof
US6607947B1 (en) 1990-05-29 2003-08-19 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device with fluorinated layer for blocking alkali ions
US7355202B2 (en) 1990-05-29 2008-04-08 Semiconductor Energy Co., Ltd. Thin-film transistor
US5523240A (en) * 1990-05-29 1996-06-04 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a thin film transistor with a halogen doped blocking layer
US6448577B1 (en) 1990-10-15 2002-09-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with grain boundaries
US5859445A (en) * 1990-11-20 1999-01-12 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device including thin film transistors having spoiling impurities added thereto
US6011277A (en) * 1990-11-20 2000-01-04 Semiconductor Energy Laboratory Co., Ltd. Gate insulated field effect transistors and method of manufacturing the same
US5849601A (en) * 1990-12-25 1998-12-15 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US5946561A (en) * 1991-03-18 1999-08-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
JP2561572B2 (en) * 1991-05-11 1996-12-11 株式会社半導体エネルギー研究所 Method of manufacturing insulated gate field effect transistor
JPH0621096A (en) * 1991-05-11 1994-01-28 Semiconductor Energy Lab Co Ltd Manufacture of insulation gate type field effect transistor
JPH05283694A (en) * 1991-08-23 1993-10-29 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacture thereof
US6013928A (en) * 1991-08-23 2000-01-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having interlayer insulating film and method for forming the same
US7821011B2 (en) 1991-08-26 2010-10-26 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect semiconductor devices and method of manufacturing the same
US6803600B2 (en) 1991-08-26 2004-10-12 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect semiconductor devices and method of manufacturing the same
US5962870A (en) * 1991-08-26 1999-10-05 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect semiconductor devices
US6331723B1 (en) 1991-08-26 2001-12-18 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device having at least two transistors having LDD region in one pixel
US6919239B2 (en) 1991-10-04 2005-07-19 Semiconductor Energy Laboratory Co., Ltd. Method for forming a semiconductor device
US6660575B1 (en) 1991-10-04 2003-12-09 Semiconductor Energy Laboratory Co., Ltd. Method for forming a semiconductor device
US6476447B1 (en) 1992-02-05 2002-11-05 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device including a transistor
US6147375A (en) * 1992-02-05 2000-11-14 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device
US6323069B1 (en) 1992-03-25 2001-11-27 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a thin film transistor using light irradiation to form impurity regions
US6569724B2 (en) 1992-03-25 2003-05-27 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect transistor and method for forming the same
US6887746B2 (en) 1992-03-25 2005-05-03 Semiconductor Energy Lab Insulated gate field effect transistor and method for forming the same
US7554616B1 (en) 1992-04-28 2009-06-30 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US5962897A (en) * 1992-06-18 1999-10-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US6790749B2 (en) 1992-10-09 2004-09-14 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US8017506B2 (en) 1992-10-09 2011-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US6624477B1 (en) 1992-10-09 2003-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US6455875B2 (en) 1992-10-09 2002-09-24 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor having enhanced field mobility
US7602020B2 (en) 1992-10-09 2009-10-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US7109108B2 (en) 1992-10-09 2006-09-19 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device having metal silicide
US7723788B2 (en) 1992-10-09 2010-05-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
JPH06296023A (en) * 1993-02-10 1994-10-21 Semiconductor Energy Lab Co Ltd Thin-film semiconductor device and manufacture thereof
US6331717B1 (en) 1993-08-12 2001-12-18 Semiconductor Energy Laboratory Co. Ltd. Insulated gate semiconductor device and process for fabricating the same
US6437366B1 (en) 1993-08-12 2002-08-20 Semiconductor Energy Laboratory Co., Ltd. Insulated gate semiconductor device and process for fabricating the same
US6500703B1 (en) 1993-08-12 2002-12-31 Semicondcutor Energy Laboratory Co., Ltd. Insulated gate semiconductor device and process for fabricating the same
US7381598B2 (en) 1993-08-12 2008-06-03 Semiconductor Energy Laboratory Co., Ltd. Insulated gate semiconductor device and process for fabricating the same
JPH07111334A (en) * 1993-08-20 1995-04-25 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacture thereof
US7271082B2 (en) 1993-10-26 2007-09-18 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US7452794B2 (en) 1993-10-26 2008-11-18 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of a thin film semiconductor device
US7691692B2 (en) 1993-10-26 2010-04-06 Semiconductor Energy Laboratory Co., Ltd. Substrate processing apparatus and a manufacturing method of a thin film semiconductor device
US8304350B2 (en) 1993-10-26 2012-11-06 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US6482752B1 (en) * 1993-10-26 2002-11-19 Semiconductor Energy Laboratory Co., Ltd. Substrate processing apparatus and method and a manufacturing method of a thin film semiconductor device
US7229861B2 (en) 1994-09-16 2007-06-12 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device
US6479329B2 (en) 1994-09-16 2002-11-12 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device
US6709905B2 (en) 1995-02-21 2004-03-23 Semiconductor Energy Laboratory Co., Ltd. Method for producing insulated gate thin film semiconductor device
US7615423B2 (en) 1995-02-21 2009-11-10 Semiconductor Energy Laboratory Co., Ltd. Method for producing insulated gate thin film semiconductor device
US7045403B2 (en) 1995-02-21 2006-05-16 Semiconductor Energy Laboratory Co., Ltd. Method for producing insulated gate thin film semiconductor device
US6921686B2 (en) 1995-02-21 2005-07-26 Semiconductor Energy Laboratory Co., Ltd. Method for producing insulated gate thin film semiconductor device
US6265745B1 (en) 1995-02-21 2001-07-24 Semiconductor Energy Laboratory Co., Ltd. Method for producing insulated gate thin film semiconductor device
US6204099B1 (en) 1995-02-21 2001-03-20 Semiconductor Energy Laboratory Co., Ltd. Method for producing insulated gate thin film semiconductor device
US6790714B2 (en) 1995-07-03 2004-09-14 Sanyo Electric Co., Ltd. Semiconductor device, display device and method of fabricating the same
US6500704B1 (en) 1995-07-03 2002-12-31 Sanyo Electric Co., Ltd Semiconductor device, display device and method of fabricating the same
US7084052B2 (en) 1995-07-03 2006-08-01 Sanyo Electric Co., Ltd. Semiconductor device, display device and method of fabricating the same
US6797550B2 (en) 2001-12-21 2004-09-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method therefor
US7319055B2 (en) 2001-12-21 2008-01-15 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a semiconductor device utilizing crystallization of semiconductor region with laser beam
US7635883B2 (en) 2001-12-28 2009-12-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US6911358B2 (en) 2001-12-28 2005-06-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US7129121B2 (en) 2001-12-28 2006-10-31 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device

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