JPS60245173A - Insulated gate type semiconductor device - Google Patents
Insulated gate type semiconductor deviceInfo
- Publication number
- JPS60245173A JPS60245173A JP10025184A JP10025184A JPS60245173A JP S60245173 A JPS60245173 A JP S60245173A JP 10025184 A JP10025184 A JP 10025184A JP 10025184 A JP10025184 A JP 10025184A JP S60245173 A JPS60245173 A JP S60245173A
- Authority
- JP
- Grant status
- Application
- Patent type
- Prior art keywords
- channel
- semiconductor
- gate
- type
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78663—Amorphous silicon transistors
- H01L29/78666—Amorphous silicon transistors with normal-type structure, e.g. with top gate
Abstract
PURPOSE:To obtain an IGEFT having high reverse withstand strength by using a nonsingle crystal semiconductor to which hydrogen or halogen element is added as a channel, extending a region aided to crystallize to the interior of the channel, and providing source and drain adjacent to the channel. CONSTITUTION:A laminate of nonsingle crystal semiconductor 2 which contains hydrogen of density higher than 1atom% and Si3N4 3 is formed on a quartz glass substrate 1, an N<+> type polysilicon gate electrode 4 is formed by a resist mask 6, P ions are implanted to form N type layers 7, 8. It is annealed with strong light 10 of mercury lamp, polycrystallized to the outside of the layers 7, 8, the bottom is approached to the substrate 1, advanced to channel side from the junction boundaries 17, 17' of the layers 7, 8, and the ends 15, 15' are disposed at the channel side from gate electrode ends 16, 16'. With this structure, the breakdown voltage of junction increases at the reverse bias time to obtain a high withstand IGFET.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10025184A JPS60245173A (en) | 1984-05-18 | 1984-05-18 | Insulated gate type semiconductor device |
Applications Claiming Priority (13)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10025184A JPS60245173A (en) | 1984-05-18 | 1984-05-18 | Insulated gate type semiconductor device |
US06912498 US4727044A (en) | 1984-05-18 | 1986-09-29 | Method of making a thin film transistor with laser recrystallized source and drain |
US07153477 US4959700A (en) | 1984-05-18 | 1988-02-03 | Insulated gate field effect transistor and its manufacturing method |
US07707178 US5142344A (en) | 1984-05-18 | 1991-05-24 | Insulated gate field effect transistor and its manufacturing method |
JP33372592A JP2648784B2 (en) | 1984-05-18 | 1992-11-20 | LCD panel insulated gate field effect semiconductor device |
US07987179 US5315132A (en) | 1984-05-18 | 1992-12-08 | Insulated gate field effect transistor |
US08054842 US5313077A (en) | 1984-05-18 | 1993-04-30 | Insulated gate field effect transistor and its manufacturing method |
US08171769 US6660574B1 (en) | 1984-05-18 | 1993-12-22 | Method of forming a semiconductor device including recombination center neutralizer |
US08473953 US5543636A (en) | 1984-05-18 | 1995-06-07 | Insulated gate field effect transistor |
US08944136 US6680486B1 (en) | 1984-05-18 | 1997-10-06 | Insulated gate field effect transistor and its manufacturing method |
US08947731 US6221701B1 (en) | 1984-05-18 | 1997-10-16 | Insulated gate field effect transistor and its manufacturing method |
US09406794 US6635520B1 (en) | 1984-05-18 | 1999-09-28 | Operation method of semiconductor devices |
US09406791 US6734499B1 (en) | 1984-05-18 | 1999-09-28 | Operation method of semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS60245173A true true JPS60245173A (en) | 1985-12-04 |
Family
ID=14269004
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10025184A Pending JPS60245173A (en) | 1984-05-18 | 1984-05-18 | Insulated gate type semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60245173A (en) |
Cited By (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03246973A (en) * | 1990-02-23 | 1991-11-05 | Toshiba Corp | Thin film transistor and its manufacture |
US5294821A (en) * | 1990-10-09 | 1994-03-15 | Seiko Epson Corporation | Thin-film SOI semiconductor device having heavily doped diffusion regions beneath the channels of transistors |
JPH0799317A (en) * | 1993-08-12 | 1995-04-11 | Semiconductor Energy Lab Co Ltd | Insulated thin-film gate type semiconductor device and manufacture thereof |
US5849601A (en) * | 1990-12-25 | 1998-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method for manufacturing the same |
US5859445A (en) * | 1990-11-20 | 1999-01-12 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device including thin film transistors having spoiling impurities added thereto |
US5917225A (en) * | 1992-03-05 | 1999-06-29 | Semiconductor Energy Laboratory Co., Ltd. | Insulated gate field effect transistor having specific dielectric structures |
US5962870A (en) * | 1991-08-26 | 1999-10-05 | Semiconductor Energy Laboratory Co., Ltd. | Insulated gate field effect semiconductor devices |
US6013928A (en) * | 1991-08-23 | 2000-01-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having interlayer insulating film and method for forming the same |
US6147375A (en) * | 1992-02-05 | 2000-11-14 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix display device |
US6204099B1 (en) | 1995-02-21 | 2001-03-20 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing insulated gate thin film semiconductor device |
US6271066B1 (en) | 1991-03-18 | 2001-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor material and method for forming the same and thin film transistor |
US6323069B1 (en) | 1992-03-25 | 2001-11-27 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a thin film transistor using light irradiation to form impurity regions |
US6331717B1 (en) | 1993-08-12 | 2001-12-18 | Semiconductor Energy Laboratory Co. Ltd. | Insulated gate semiconductor device and process for fabricating the same |
US6337731B1 (en) | 1992-04-28 | 2002-01-08 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method of driving the same |
US6369788B1 (en) | 1990-11-26 | 2002-04-09 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and driving method for the same |
US6479329B2 (en) | 1994-09-16 | 2002-11-12 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing semiconductor device |
US6562672B2 (en) | 1991-03-18 | 2003-05-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor material and method for forming the same and thin film transistor |
US6624450B1 (en) * | 1992-03-27 | 2003-09-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
US6797550B2 (en) | 2001-12-21 | 2004-09-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method therefor |
US6893906B2 (en) | 1990-11-26 | 2005-05-17 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and driving method for the same |
US6911358B2 (en) | 2001-12-28 | 2005-06-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS582073A (en) * | 1981-06-29 | 1983-01-07 | Sony Corp | Field effect transistor |
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS582073A (en) * | 1981-06-29 | 1983-01-07 | Sony Corp | Field effect transistor |
Cited By (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03246973A (en) * | 1990-02-23 | 1991-11-05 | Toshiba Corp | Thin film transistor and its manufacture |
US5294821A (en) * | 1990-10-09 | 1994-03-15 | Seiko Epson Corporation | Thin-film SOI semiconductor device having heavily doped diffusion regions beneath the channels of transistors |
US7462515B2 (en) | 1990-11-13 | 2008-12-09 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and driving method for the same |
US5859445A (en) * | 1990-11-20 | 1999-01-12 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device including thin film transistors having spoiling impurities added thereto |
US6011277A (en) * | 1990-11-20 | 2000-01-04 | Semiconductor Energy Laboratory Co., Ltd. | Gate insulated field effect transistors and method of manufacturing the same |
US6369788B1 (en) | 1990-11-26 | 2002-04-09 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and driving method for the same |
US6893906B2 (en) | 1990-11-26 | 2005-05-17 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and driving method for the same |
US5849601A (en) * | 1990-12-25 | 1998-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method for manufacturing the same |
US6271066B1 (en) | 1991-03-18 | 2001-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor material and method for forming the same and thin film transistor |
US6562672B2 (en) | 1991-03-18 | 2003-05-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor material and method for forming the same and thin film transistor |
US6013928A (en) * | 1991-08-23 | 2000-01-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having interlayer insulating film and method for forming the same |
US7821011B2 (en) | 1991-08-26 | 2010-10-26 | Semiconductor Energy Laboratory Co., Ltd. | Insulated gate field effect semiconductor devices and method of manufacturing the same |
US5962870A (en) * | 1991-08-26 | 1999-10-05 | Semiconductor Energy Laboratory Co., Ltd. | Insulated gate field effect semiconductor devices |
US6803600B2 (en) | 1991-08-26 | 2004-10-12 | Semiconductor Energy Laboratory Co., Ltd. | Insulated gate field effect semiconductor devices and method of manufacturing the same |
US6331723B1 (en) | 1991-08-26 | 2001-12-18 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix display device having at least two transistors having LDD region in one pixel |
US6147375A (en) * | 1992-02-05 | 2000-11-14 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix display device |
US6476447B1 (en) | 1992-02-05 | 2002-11-05 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix display device including a transistor |
US5917225A (en) * | 1992-03-05 | 1999-06-29 | Semiconductor Energy Laboratory Co., Ltd. | Insulated gate field effect transistor having specific dielectric structures |
US6569724B2 (en) | 1992-03-25 | 2003-05-27 | Semiconductor Energy Laboratory Co., Ltd. | Insulated gate field effect transistor and method for forming the same |
US6323069B1 (en) | 1992-03-25 | 2001-11-27 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a thin film transistor using light irradiation to form impurity regions |
US6887746B2 (en) | 1992-03-25 | 2005-05-03 | Semiconductor Energy Lab | Insulated gate field effect transistor and method for forming the same |
US6624450B1 (en) * | 1992-03-27 | 2003-09-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
US6337731B1 (en) | 1992-04-28 | 2002-01-08 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method of driving the same |
US7554616B1 (en) | 1992-04-28 | 2009-06-30 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method of driving the same |
US6331717B1 (en) | 1993-08-12 | 2001-12-18 | Semiconductor Energy Laboratory Co. Ltd. | Insulated gate semiconductor device and process for fabricating the same |
JPH0799317A (en) * | 1993-08-12 | 1995-04-11 | Semiconductor Energy Lab Co Ltd | Insulated thin-film gate type semiconductor device and manufacture thereof |
US6437366B1 (en) | 1993-08-12 | 2002-08-20 | Semiconductor Energy Laboratory Co., Ltd. | Insulated gate semiconductor device and process for fabricating the same |
US6500703B1 (en) | 1993-08-12 | 2002-12-31 | Semicondcutor Energy Laboratory Co., Ltd. | Insulated gate semiconductor device and process for fabricating the same |
US7381598B2 (en) | 1993-08-12 | 2008-06-03 | Semiconductor Energy Laboratory Co., Ltd. | Insulated gate semiconductor device and process for fabricating the same |
US7229861B2 (en) | 1994-09-16 | 2007-06-12 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing semiconductor device |
US6479329B2 (en) | 1994-09-16 | 2002-11-12 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing semiconductor device |
US6921686B2 (en) | 1995-02-21 | 2005-07-26 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing insulated gate thin film semiconductor device |
US7045403B2 (en) | 1995-02-21 | 2006-05-16 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing insulated gate thin film semiconductor device |
US6204099B1 (en) | 1995-02-21 | 2001-03-20 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing insulated gate thin film semiconductor device |
US6265745B1 (en) | 1995-02-21 | 2001-07-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing insulated gate thin film semiconductor device |
US6709905B2 (en) | 1995-02-21 | 2004-03-23 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing insulated gate thin film semiconductor device |
US7615423B2 (en) | 1995-02-21 | 2009-11-10 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing insulated gate thin film semiconductor device |
US7319055B2 (en) | 2001-12-21 | 2008-01-15 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating a semiconductor device utilizing crystallization of semiconductor region with laser beam |
US6797550B2 (en) | 2001-12-21 | 2004-09-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method therefor |
US7129121B2 (en) | 2001-12-28 | 2006-10-31 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US6911358B2 (en) | 2001-12-28 | 2005-06-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US7635883B2 (en) | 2001-12-28 | 2009-12-22 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4866495A (en) | High power MOSFET and integrated control circuit therefor for high-side switch application | |
US3890632A (en) | Stabilized semiconductor devices and method of making same | |
JPS582073A (en) | Field effect transistor | |
JPH03248433A (en) | Manufacture of semiconductor device | |
JPS58105574A (en) | Thin film transistor | |
JPS5638867A (en) | Insulated gate type field effect transistor | |
JPS5366181A (en) | High dielectric strength mis type transistor | |
JPH01158775A (en) | Thin film transistor and its manufacture | |
JPS59220971A (en) | Manufacture of semiconductor device | |
JPS61225869A (en) | Thin film transistor device and manufacture thereof | |
JPS5688354A (en) | Semiconductor integrated circuit device | |
GB2064866A (en) | Field effect semiconductor device | |
JPS63204769A (en) | Thin film transistor | |
JPS6167269A (en) | Semiconductor element | |
JPS63200572A (en) | Manufacture of thin film semiconductor device | |
JPS5974674A (en) | Insulation gate semiconductor device and manufacture thereof | |
JPS6028271A (en) | Vertical type mosfet | |
JPS60160169A (en) | Mos transistor and manufacture thereof | |
JPH04212466A (en) | Semiconductor device and manufacture thereof | |
JPS61160975A (en) | Mos field effect transistor | |
JPS63287064A (en) | Mis type semiconductor device and manufacture thereof | |
JPS60245174A (en) | Manufacture of insulated gate type semiconductor device | |
JPS59231860A (en) | Double diffusion type insulated gate field-effect transistor | |
JPH01300567A (en) | Amorphous silicon thin film transistor and manufacture thereof | |
JPS55151363A (en) | Mos semiconductor device and fabricating method of the same |