JPS60245173A - Insulated gate type semiconductor device - Google Patents

Insulated gate type semiconductor device

Info

Publication number
JPS60245173A
JPS60245173A JP10025184A JP10025184A JPS60245173A JP S60245173 A JPS60245173 A JP S60245173A JP 10025184 A JP10025184 A JP 10025184A JP 10025184 A JP10025184 A JP 10025184A JP S60245173 A JPS60245173 A JP S60245173A
Authority
JP
Japan
Prior art keywords
channel
layers
gate electrode
obtain
crystal semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10025184A
Inventor
Shunpei Yamazaki
Original Assignee
Semiconductor Energy Lab Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Lab Co Ltd filed Critical Semiconductor Energy Lab Co Ltd
Priority to JP10025184A priority Critical patent/JPS60245173A/en
Publication of JPS60245173A publication Critical patent/JPS60245173A/en
Priority claimed from US06/912,498 external-priority patent/US4727044A/en
Priority claimed from JP4333725A external-priority patent/JP2648784B2/en
Application status is Pending legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409Unipolar field-effect transistors
    • H01L29/66477Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742Thin film unipolar transistors
    • H01L29/6675Amorphous silicon or polysilicon transistors
    • H01L29/66757Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02524Group 14 semiconducting materials
    • H01L21/02532Silicon, silicon germanium, germanium
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/0262Reduction or decomposition of gaseous compounds, e.g. CVD
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/268Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651Silicon transistors
    • H01L29/7866Non-monocrystalline silicon transistors
    • H01L29/78663Amorphous silicon transistors
    • H01L29/78666Amorphous silicon transistors with normal-type structure, e.g. with top gate

Abstract

PURPOSE:To obtain an IGEFT having high reverse withstand strength by using a nonsingle crystal semiconductor to which hydrogen or halogen element is added as a channel, extending a region aided to crystallize to the interior of the channel, and providing source and drain adjacent to the channel. CONSTITUTION:A laminate of nonsingle crystal semiconductor 2 which contains hydrogen of density higher than 1atom% and Si3N4 3 is formed on a quartz glass substrate 1, an N<+> type polysilicon gate electrode 4 is formed by a resist mask 6, P ions are implanted to form N type layers 7, 8. It is annealed with strong light 10 of mercury lamp, polycrystallized to the outside of the layers 7, 8, the bottom is approached to the substrate 1, advanced to channel side from the junction boundaries 17, 17' of the layers 7, 8, and the ends 15, 15' are disposed at the channel side from gate electrode ends 16, 16'. With this structure, the breakdown voltage of junction increases at the reverse bias time to obtain a high withstand IGFET.
JP10025184A 1984-05-18 1984-05-18 Insulated gate type semiconductor device Pending JPS60245173A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10025184A JPS60245173A (en) 1984-05-18 1984-05-18 Insulated gate type semiconductor device

Applications Claiming Priority (13)

Application Number Priority Date Filing Date Title
JP10025184A JPS60245173A (en) 1984-05-18 1984-05-18 Insulated gate type semiconductor device
US06/912,498 US4727044A (en) 1984-05-18 1986-09-29 Method of making a thin film transistor with laser recrystallized source and drain
US07/153,477 US4959700A (en) 1984-05-18 1988-02-03 Insulated gate field effect transistor and its manufacturing method
US07/707,178 US5142344A (en) 1984-05-18 1991-05-24 Insulated gate field effect transistor and its manufacturing method
JP4333725A JP2648784B2 (en) 1984-05-18 1992-11-20 LCD panel insulated gate field effect semiconductor device
US07/987,179 US5315132A (en) 1984-05-18 1992-12-08 Insulated gate field effect transistor
US08/054,842 US5313077A (en) 1984-05-18 1993-04-30 Insulated gate field effect transistor and its manufacturing method
US08/171,769 US6660574B1 (en) 1984-05-18 1993-12-22 Method of forming a semiconductor device including recombination center neutralizer
US08/473,953 US5543636A (en) 1984-05-18 1995-06-07 Insulated gate field effect transistor
US08/944,136 US6680486B1 (en) 1984-05-18 1997-10-06 Insulated gate field effect transistor and its manufacturing method
US08/947,731 US6221701B1 (en) 1984-05-18 1997-10-16 Insulated gate field effect transistor and its manufacturing method
US09/406,794 US6635520B1 (en) 1984-05-18 1999-09-28 Operation method of semiconductor devices
US09/406,791 US6734499B1 (en) 1984-05-18 1999-09-28 Operation method of semiconductor devices

Publications (1)

Publication Number Publication Date
JPS60245173A true JPS60245173A (en) 1985-12-04

Family

ID=14269004

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10025184A Pending JPS60245173A (en) 1984-05-18 1984-05-18 Insulated gate type semiconductor device

Country Status (1)

Country Link
JP (1) JPS60245173A (en)

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03246973A (en) * 1990-02-23 1991-11-05 Toshiba Corp Thin film transistor and its manufacture
US5294821A (en) * 1990-10-09 1994-03-15 Seiko Epson Corporation Thin-film SOI semiconductor device having heavily doped diffusion regions beneath the channels of transistors
JPH0799317A (en) * 1993-08-12 1995-04-11 Semiconductor Energy Lab Co Ltd Insulated thin-film gate type semiconductor device and manufacture thereof
US5849601A (en) * 1990-12-25 1998-12-15 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US5859445A (en) * 1990-11-20 1999-01-12 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device including thin film transistors having spoiling impurities added thereto
US5917225A (en) * 1992-03-05 1999-06-29 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect transistor having specific dielectric structures
US5962870A (en) * 1991-08-26 1999-10-05 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect semiconductor devices
US6013928A (en) * 1991-08-23 2000-01-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having interlayer insulating film and method for forming the same
US6147375A (en) * 1992-02-05 2000-11-14 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device
US6204099B1 (en) 1995-02-21 2001-03-20 Semiconductor Energy Laboratory Co., Ltd. Method for producing insulated gate thin film semiconductor device
US6271066B1 (en) 1991-03-18 2001-08-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor material and method for forming the same and thin film transistor
US6323069B1 (en) 1992-03-25 2001-11-27 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a thin film transistor using light irradiation to form impurity regions
US6331717B1 (en) 1993-08-12 2001-12-18 Semiconductor Energy Laboratory Co. Ltd. Insulated gate semiconductor device and process for fabricating the same
US6337731B1 (en) 1992-04-28 2002-01-08 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US6369788B1 (en) 1990-11-26 2002-04-09 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving method for the same
US6479329B2 (en) 1994-09-16 2002-11-12 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device
US6562672B2 (en) 1991-03-18 2003-05-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor material and method for forming the same and thin film transistor
US6624450B1 (en) * 1992-03-27 2003-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US6797550B2 (en) 2001-12-21 2004-09-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method therefor
US6893906B2 (en) 1990-11-26 2005-05-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving method for the same
US6911358B2 (en) 2001-12-28 2005-06-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
CN106098542A (en) * 2016-06-20 2016-11-09 中国工程物理研究院电子工程研究所 A kind of method promoting silicon carbide power device reverse BV

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS582073A (en) * 1981-06-29 1983-01-07 Sony Corp Field effect transistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS582073A (en) * 1981-06-29 1983-01-07 Sony Corp Field effect transistor

Cited By (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03246973A (en) * 1990-02-23 1991-11-05 Toshiba Corp Thin film transistor and its manufacture
US5294821A (en) * 1990-10-09 1994-03-15 Seiko Epson Corporation Thin-film SOI semiconductor device having heavily doped diffusion regions beneath the channels of transistors
US7462515B2 (en) 1990-11-13 2008-12-09 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving method for the same
US6011277A (en) * 1990-11-20 2000-01-04 Semiconductor Energy Laboratory Co., Ltd. Gate insulated field effect transistors and method of manufacturing the same
US5859445A (en) * 1990-11-20 1999-01-12 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device including thin film transistors having spoiling impurities added thereto
US6893906B2 (en) 1990-11-26 2005-05-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving method for the same
US6369788B1 (en) 1990-11-26 2002-04-09 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving method for the same
US5849601A (en) * 1990-12-25 1998-12-15 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US6562672B2 (en) 1991-03-18 2003-05-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor material and method for forming the same and thin film transistor
US6271066B1 (en) 1991-03-18 2001-08-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor material and method for forming the same and thin film transistor
US6013928A (en) * 1991-08-23 2000-01-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having interlayer insulating film and method for forming the same
US6803600B2 (en) 1991-08-26 2004-10-12 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect semiconductor devices and method of manufacturing the same
US5962870A (en) * 1991-08-26 1999-10-05 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect semiconductor devices
US6331723B1 (en) 1991-08-26 2001-12-18 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device having at least two transistors having LDD region in one pixel
US7821011B2 (en) 1991-08-26 2010-10-26 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect semiconductor devices and method of manufacturing the same
US6147375A (en) * 1992-02-05 2000-11-14 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device
US6476447B1 (en) 1992-02-05 2002-11-05 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device including a transistor
US5917225A (en) * 1992-03-05 1999-06-29 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect transistor having specific dielectric structures
US6323069B1 (en) 1992-03-25 2001-11-27 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a thin film transistor using light irradiation to form impurity regions
US6569724B2 (en) 1992-03-25 2003-05-27 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect transistor and method for forming the same
US6887746B2 (en) 1992-03-25 2005-05-03 Semiconductor Energy Lab Insulated gate field effect transistor and method for forming the same
US6624450B1 (en) * 1992-03-27 2003-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US6337731B1 (en) 1992-04-28 2002-01-08 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US7554616B1 (en) 1992-04-28 2009-06-30 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US6437366B1 (en) 1993-08-12 2002-08-20 Semiconductor Energy Laboratory Co., Ltd. Insulated gate semiconductor device and process for fabricating the same
US7381598B2 (en) 1993-08-12 2008-06-03 Semiconductor Energy Laboratory Co., Ltd. Insulated gate semiconductor device and process for fabricating the same
JPH0799317A (en) * 1993-08-12 1995-04-11 Semiconductor Energy Lab Co Ltd Insulated thin-film gate type semiconductor device and manufacture thereof
US6331717B1 (en) 1993-08-12 2001-12-18 Semiconductor Energy Laboratory Co. Ltd. Insulated gate semiconductor device and process for fabricating the same
US6500703B1 (en) 1993-08-12 2002-12-31 Semicondcutor Energy Laboratory Co., Ltd. Insulated gate semiconductor device and process for fabricating the same
US6479329B2 (en) 1994-09-16 2002-11-12 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device
US7229861B2 (en) 1994-09-16 2007-06-12 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device
US6204099B1 (en) 1995-02-21 2001-03-20 Semiconductor Energy Laboratory Co., Ltd. Method for producing insulated gate thin film semiconductor device
US6921686B2 (en) 1995-02-21 2005-07-26 Semiconductor Energy Laboratory Co., Ltd. Method for producing insulated gate thin film semiconductor device
US7615423B2 (en) 1995-02-21 2009-11-10 Semiconductor Energy Laboratory Co., Ltd. Method for producing insulated gate thin film semiconductor device
US6265745B1 (en) 1995-02-21 2001-07-24 Semiconductor Energy Laboratory Co., Ltd. Method for producing insulated gate thin film semiconductor device
US6709905B2 (en) 1995-02-21 2004-03-23 Semiconductor Energy Laboratory Co., Ltd. Method for producing insulated gate thin film semiconductor device
US7045403B2 (en) 1995-02-21 2006-05-16 Semiconductor Energy Laboratory Co., Ltd. Method for producing insulated gate thin film semiconductor device
US7319055B2 (en) 2001-12-21 2008-01-15 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a semiconductor device utilizing crystallization of semiconductor region with laser beam
US6797550B2 (en) 2001-12-21 2004-09-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method therefor
US7129121B2 (en) 2001-12-28 2006-10-31 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US7635883B2 (en) 2001-12-28 2009-12-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US6911358B2 (en) 2001-12-28 2005-06-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
CN106098542A (en) * 2016-06-20 2016-11-09 中国工程物理研究院电子工程研究所 A kind of method promoting silicon carbide power device reverse BV

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