CN106098542A - Method for increasing reverse blocking voltage of silicon carbide power device - Google Patents

Method for increasing reverse blocking voltage of silicon carbide power device Download PDF

Info

Publication number
CN106098542A
CN106098542A CN 201610440480 CN201610440480A CN106098542A CN 106098542 A CN106098542 A CN 106098542A CN 201610440480 CN201610440480 CN 201610440480 CN 201610440480 A CN201610440480 A CN 201610440480A CN 106098542 A CN106098542 A CN 106098542A
Authority
CN
Grant status
Application
Patent type
Prior art keywords
silicon carbide
blocking voltage
reverse blocking
carbide power
method
Prior art date
Application number
CN 201610440480
Other languages
Chinese (zh)
Inventor
肖承全
李俊焘
代刚
徐星亮
向安
周阳
张�林
杨英坤
张龙
张健
Original Assignee
中国工程物理研究院电子工程研究所
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/0445Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66053Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
    • H01L29/6606Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices

Abstract

The invention discloses a method for increasing reverse blocking voltage of a silicon carbide power device. The method is carried out mainly by the steps of putting the silicon carbide power device under an ultraviolet light source, and enabling the silicon carbide power device to be irradiated by the ultraviolet light for a certain time at the room temperature. Therefore, an effect of effectively increasing the reverse blocking voltage of the SiC power device is achieved. The method is simple to operate and low in cost.

Description

一种提升碳化硅功率器件反向阻断电压的方法 A method for a silicon carbide power device reverse blocking voltage improvement

技术领域 FIELD

[0001]本发明属于宽禁带半导体功率器件领域,尤其涉及一种提升功率器件反向阻断电压的方法。 [0001] The present invention belongs to the wide bandgap semiconductor power device, and more particularly relates to a method for reverse blocking voltage of a power lifting device.

背景技术 Background technique

[0002]碳化硅(SiC)作为第三代半导体材料,较传统硅(Si)材料具有更为优异的物理和化学性质,使得其在功率半导体领域有着巨大的应用潜力。 [0002] The silicon carbide (SiC) as the third generation of semiconductor material than the conventional silicon (Si) material having more excellent physical and chemical properties, such that it has great potential in the field of power semiconductors. 相比Si材料,SiC具有更宽的禁带宽度,更高的临界击穿场强,更高的饱和电子漂移速度及更高的热导率等优点,使其可以在功率半导体领域能够满足Si材料不具备的高温、高压、高频及抗辐照等应用。 Compared Si material, SiC has a wider band gap, the higher the critical breakdown field, the advantages of higher saturated electron drift velocity and higher thermal conductivity and the like, so that it may be able to meet in the field of power semiconductors Si materials do not have a high temperature, high pressure, high frequency applications and anti-irradiation.

[0003]反向阻断电压是功率器件非常重要的性能指标,将直接决定功率器件的应用领域,如200 V以下低压器件主要应用于功率因数校正(PFC)及功率放大、600 V-1.7 kV中压器件主要应用于光伏逆变器及UPS电源、3.3 kV~6.5 kV高压器件主要应用于智能电网及机车牵引。 [0003] The reverse blocking voltage power devices are very important performance will directly determine the power device applications, such as 200 V low voltage device is mainly used in power factor correction (PFC) and a power amplifier, 600 V-1.7 kV the pressure device is mainly used in a photovoltaic power inverter and UPS, 3.3 kV ~ 6.5 kV high-voltage devices and are mainly used in smart grid locomotive traction. 发展SiC高压功率器件的过程中,要完全达到材料赋予的最佳性能,尽可能获得最大的反向阻断电压,需要降低结边缘的电场集中效应,合理的结终端设计尤为重要。 SiC high voltage power device development process, the material to fully achieve optimal performance given, the maximum reverse blocking voltage as possible, it is necessary to reduce the electric field concentration effect junction edges, reasonable junction termination design is particularly important. 目前,结终端技术根据结构的不同可以分为边缘延伸型与刻蚀台阶型,主要包括场限环结构、金属场板结构以及结终端扩展(JTE)技术。 At present, according to techniques junction termination structure can be divided into an edge type and extending etching step type, including field limiting ring structure, the field plate structure, and the metal junction termination extension (the JTE) technology. 通过以上结终端技术,及使用厚外延SiC漂移层,目前已制备了反向阻断电压高达21.7 kV的功率器件。 By the above junction termination technique and a thick epitaxial SiC drift layer, it has a high power device reverse blocking voltage of 21.7 kV was prepared. 但要进一步提升反向阻断电压,需不断优化设计结终端结构或使用更厚的外延层材料,这是比较困难的。 However, to further enhance the reverse blocking voltage, for an optimized design of the junction termination structure continuously or thicker epitaxial layer material, which is difficult.

发明内容 SUMMARY

[0004]本发明提供了一种提升碳化硅功率器件反向阻断电压的方法,操作简单、成本低廉,通过后期处理,对SiC功率器件的反向阻断电压具有非常好的提升效果。 [0004] The present invention provides a method of lifting a silicon carbide power device reverse blocking voltage, simple operation, low cost, through post-processing, has a very good effect of improving the reverse blocking voltage SiC power device.

[0005]本发明的技术方案如下: [0005] aspect of the present invention is as follows:

一种提升碳化硅功率器件反向阻断电压的方法,其特征在于:将碳化硅功率器件放置在紫外光光源下,在室温下经一定时间的紫外光照射。 A method for reverse blocking voltage of the silicon carbide power devices to enhance, characterized in that: a silicon carbide power device placed under UV light source, UV irradiation after a predetermined time at room temperature.

[0006]所述碳化硅功率器件可以是PiN二极管、肖特基二极管(SBD)、结势皇二极管(JBS),双极性晶体管(BJT)或门极关断晶闸管(GTO)。 [0006] The silicon carbide power device may be a PiN diode, a Schottky diode (the SBD), Huang diode junction potential (the JBS), bipolar transistors (BJT) or gate turn-off thyristor (GTO).

[0007]优选地,所述紫外光光源为汞灯、氙灯或氘灯。 [0007] Preferably, the UV light source is a mercury lamp, a deuterium lamp or a xenon lamp.

[0008]优选地,所述紫外光的照射时间为2-120小时。 [0008] Preferably, the ultraviolet irradiation time is 2-120 hours.

[0009]本发明具有以下优点: [0009] The present invention has the following advantages:

本发明利用紫外光在碳化硅和二氧化硅界面产生的额外负电荷来缓解结边缘的电场集中效应,操作简单,成本低廉,只需配置简单的紫外光源,即可达到反向阻断电压非常好的提升效果。 Additional negative charges in the present invention with ultraviolet light generated at the interface of silicon carbide and silicon dioxide to alleviate electric field concentration effect junction edge, simple operation, low cost, simple configuration of only the ultraviolet light source, can be achieved very reverse blocking voltage good enhance the effect.

附图说明 BRIEF DESCRIPTION

[0010]图1为本发明采用汞灯辐照碳化硅PiN 二极管前后反向阻断电压特性曲线示意图。 [0010] Fig 1 a schematic view of using the reverse blocking voltage characteristic before and after mercury lamp irradiation SiC PiN diode of the present invention.

具体实施方式 detailed description

[0011] 实施例1 [0011] Example 1

取碳化硅肖特基二极管(Sm)),经测量反向阻断电压1.6 kv; G of silicon carbide Schottky diode (Sm)), the measured reverse blocking voltage 1.6 kv;

将碳化硅Sm)放置在氙灯下,功率为22.8 mff/cm2,照射32小时; Silicon carbide Sm) is placed in a xenon lamp, a power of 22.8 mff / cm2, irradiation of 32 hours;

取碳化硅Sm),经测量反向阻断电压上升到了2.3 kV。 G of silicon carbide Sm), the measured reverse blocking voltage up to 2.3 kV.

[0012] 实施例2 [0012] Example 2

取碳化硅结势皇二极管(JBS),经测量反向阻断电压2.8kV; Huang g of silicon carbide diode junction potential (JBS), the measured reverse blocking voltage 2.8 kV;

将碳化硅JBS放置在氘灯下,功率为18.9 mff/cm2,照射48小时; The silicon carbide JBS placed in a deuterium lamp, a power of 18.9 mff / cm2, irradiation of 48 hours;

取碳化硅JBS,经测量反向阻断电压上升到了4.1 kV。 G of silicon carbide JBS, the measured reverse blocking voltage up to 4.1 kV.

[0013] 实施例3 [0013] Example 3

取碳化硅PiN二极管,经测量反向阻断电压4.0 kV; G of silicon carbide PiN diode, the measured reverse blocking voltage 4.0 kV;

将碳化硅PiN二极管放置在汞灯下,功率为23.2 mff/cm2,照射60小时; The SiC PiN diode placed under a mercury lamp, a power of 23.2 mff / cm2, irradiation of 60 hours;

取碳化硅PiN二极管,经测量反向阻断电压上升到了6.8 kV。 G of silicon carbide PiN diode, the measured reverse blocking voltage increased to 6.8 kV.

[0014]采用汞灯辐照碳化硅PiN 二极管前后的反向阻断电压曲线,如图1所示。 [0014] The reverse before and after mercury lamp irradiation SiC PiN diode blocking voltage curve as shown in FIG.

Claims (4)

  1. 1.一种提升碳化硅功率器件反向阻断电压的方法,其特征在于:将碳化硅功率器件放置在紫外光光源下,在室温下经一定时间的紫外光照射。 1. A method for the reverse blocking voltage of a silicon carbide power devices to enhance, characterized in that: a silicon carbide power device placed under UV light source, UV irradiation after a predetermined time at room temperature.
  2. 2.根据权利要求1所述的提升碳化硅功率器件反向阻断电压的方法,其特征在于:所述碳化娃功率器件为PiN 二极管、或肖特基二极管、或结势皇二极管、或双极性晶体管或门极关断晶兩管。 The method according to the reverse blocking voltage of a silicon carbide power device according to claim lifting, characterized in that: the baby carbide power devices PiN diode, or a Schottky diode, or a diode junction potential Huang, or bis bipolar transistors or gate turn-off crystal two.
  3. 3.根据权利要求1所述的提升碳化硅功率器件反向阻断电压的方法,其特征在于:所述的紫外光光源为汞灯、氙灯或氘灯。 The method according to the reverse blocking voltage of a silicon carbide power lift device according to claim, wherein: the ultraviolet light source is a mercury lamp, a deuterium lamp or a xenon lamp.
  4. 4.根据权利要求1所述的提升碳化硅功率器件反向阻断电压的方法,其特征在于:所述的紫外光照射时间为2-120小时。 The method of the reverse blocking voltage of a silicon carbide power lift device according to claim, wherein: the ultraviolet irradiation time is 2-120 hours.
CN 201610440480 2016-06-20 2016-06-20 Method for increasing reverse blocking voltage of silicon carbide power device CN106098542A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 201610440480 CN106098542A (en) 2016-06-20 2016-06-20 Method for increasing reverse blocking voltage of silicon carbide power device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 201610440480 CN106098542A (en) 2016-06-20 2016-06-20 Method for increasing reverse blocking voltage of silicon carbide power device

Publications (1)

Publication Number Publication Date
CN106098542A true true CN106098542A (en) 2016-11-09

Family

ID=57235989

Family Applications (1)

Application Number Title Priority Date Filing Date
CN 201610440480 CN106098542A (en) 2016-06-20 2016-06-20 Method for increasing reverse blocking voltage of silicon carbide power device

Country Status (1)

Country Link
CN (1) CN106098542A (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60245173A (en) * 1984-05-18 1985-12-04 Semiconductor Energy Lab Co Ltd Insulated gate type semiconductor device
JPS61232626A (en) * 1985-04-09 1986-10-16 Agency Of Ind Science & Technol Formation of insulating film
JPS62216369A (en) * 1986-03-18 1987-09-22 Fujitsu Ltd Manufacture of thin film transistor
US20060035419A1 (en) * 2004-08-03 2006-02-16 Victor Lu Low temperature curable materials for optical applications
CN101126791A (en) * 2006-08-15 2008-02-20 中芯国际集成电路制造(上海)有限公司 Method for improving electron device dielectric breakdown voltage and reliability

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60245173A (en) * 1984-05-18 1985-12-04 Semiconductor Energy Lab Co Ltd Insulated gate type semiconductor device
JPS61232626A (en) * 1985-04-09 1986-10-16 Agency Of Ind Science & Technol Formation of insulating film
JPS62216369A (en) * 1986-03-18 1987-09-22 Fujitsu Ltd Manufacture of thin film transistor
US20060035419A1 (en) * 2004-08-03 2006-02-16 Victor Lu Low temperature curable materials for optical applications
CN101126791A (en) * 2006-08-15 2008-02-20 中芯国际集成电路制造(上海)有限公司 Method for improving electron device dielectric breakdown voltage and reliability

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
程泊轩: "4H-SiC PiN二极管抗辐照特性研究", 《中国优秀硕士学位论文全文数据库-信息科技辑》 *

Similar Documents

Publication Publication Date Title
Ryu et al. 10-kV, 123-m cm2 4H-SiC power DMOSFETs
Khanna Insulated gate bipolar transistor IGBT theory and design
Sugawara et al. 12-19 kV 4H-SiC pin diodes with low power loss
Shenoy et al. High-voltage double-implanted power MOSFET's in 6H-SiC
Tolbert et al. Wide bandgap semiconductors for utility applications
US20090224284A1 (en) Semiconductor device and method of producing the same
Grider et al. 10 kV/120 A SiC DMOSFET half H-bridge power modules for 1 MVA solid state power substation
CN1710707A (en) High-power quick soft-restoring diode and mfg technology thereof
CN101540343A (en) 4H-SiC PiN /schottky diode of offset field plate structure and manufacturing method of 4H-SiC PiN /schottky diode
JP2011129547A (en) Semiconductor device and method of manufacturing the same
Ruthing et al. 600 V reverse conducting (RC-) IGBT for drives applications in ultra-thin wafer technology
Udrea et al. High voltage devices-a milestone concept in power ICs
CN102194885A (en) N-type buried-channel silicon carbide metal oxide semiconductor field effect transistor (DEMOSFET) device and preparation method thereof
Niwa et al. 21.7 kV 4H-SiC PiN diode with a space-modulated junction termination extension
US20110108941A1 (en) Fast recovery diode
Wang et al. Design and characterization of high-voltage silicon carbide emitter turn-off thyristor
Mantooth et al. Modeling of wide bandgap power semiconductor devices—Part I
Fukuda et al. Development of ultrahigh-voltage SiC devices
Sintamarean et al. Real field mission profile oriented design of a SiC-based PV-inverter application
CN101540283A (en) Method for manufacturing 4H-SiC PiN/schottky diode of field limiting ring structure
Kimoto et al. 1330 V, 67 m/spl Omega//spl middot/cm/sup 2/4H-SiC (0001) RESURF MOSFET
US20120292636A1 (en) Sic devices with high blocking voltage terminated by a negative bevel
Zhang et al. System modeling and characterization of SiC Schottky power diodes
WO2010110725A1 (en) Silicon carbide bipolar junction transistor
Cui et al. Characterization and modeling of silicon carbide power devices and paralleling operation

Legal Events

Date Code Title Description
C06 Publication
C10 Entry into substantive examination