TW335559B - The method to form a lightly doped drain in thin film transistor - Google Patents

The method to form a lightly doped drain in thin film transistor

Info

Publication number
TW335559B
TW335559B TW086114914A TW86114914A TW335559B TW 335559 B TW335559 B TW 335559B TW 086114914 A TW086114914 A TW 086114914A TW 86114914 A TW86114914 A TW 86114914A TW 335559 B TW335559 B TW 335559B
Authority
TW
Taiwan
Prior art keywords
thin film
film transistor
lightly doped
doped drain
gate
Prior art date
Application number
TW086114914A
Other languages
Chinese (zh)
Inventor
Shyue-Feng Shy
Gang-Jeng Lin
Original Assignee
Ind Tech Res Inst
Chi Mei Optoelectronics Corp
Toppoly Optoelectronics Corp
Prime View Int Corp Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ind Tech Res Inst, Chi Mei Optoelectronics Corp, Toppoly Optoelectronics Corp, Prime View Int Corp Ltd filed Critical Ind Tech Res Inst
Priority to TW086114914A priority Critical patent/TW335559B/en
Application granted granted Critical
Publication of TW335559B publication Critical patent/TW335559B/en

Links

Landscapes

  • Thin Film Transistor (AREA)

Abstract

Firstly, deposit a metal film on glass substrate and define the gate by lithography and etching technology. A gate dielectric layer, second silicon film, upper dielectric and PR are coated on the wafer. Then, etch the sidewall as a slide region by isotropic etching. Finally, to process ion implantation and annealing to form the LDD structure.
TW086114914A 1997-10-08 1997-10-08 The method to form a lightly doped drain in thin film transistor TW335559B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW086114914A TW335559B (en) 1997-10-08 1997-10-08 The method to form a lightly doped drain in thin film transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW086114914A TW335559B (en) 1997-10-08 1997-10-08 The method to form a lightly doped drain in thin film transistor

Publications (1)

Publication Number Publication Date
TW335559B true TW335559B (en) 1998-07-01

Family

ID=58263083

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086114914A TW335559B (en) 1997-10-08 1997-10-08 The method to form a lightly doped drain in thin film transistor

Country Status (1)

Country Link
TW (1) TW335559B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI780695B (en) * 2021-05-10 2022-10-11 力晶積成電子製造股份有限公司 Transistor structure and manufacturing method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI780695B (en) * 2021-05-10 2022-10-11 力晶積成電子製造股份有限公司 Transistor structure and manufacturing method thereof

Similar Documents

Publication Publication Date Title
TW362289B (en) Manufacturing method of metal oxide semiconductor field effect transistor
TW335559B (en) The method to form a lightly doped drain in thin film transistor
WO1998053491A3 (en) Manufacture of a semiconductor device with a mos transistor having an ldd structure
US5937302A (en) Method of forming lightly doped drain region and heavily doping a gate using a single implant step
TW231373B (en) Fabricating method for EEPROM IC with MONOS/MNOS structrue
TW353804B (en) Method of forming asymmetrically-disposed thin film transistors
KR970003834B1 (en) Manufacture for thin film transistor
TW347591B (en) Process for producing field effect devices
TW247369B (en) Process for integrated circuit
TW230267B (en) Fabricating method for WSi/polysilicon gate with sacrificing layer
TW279259B (en) Making method of electrostatic discharge device
KR960035926A (en) Low doping drain thin film transistor manufacturing method
KR970030301A (en) Method of forming junction region of semiconductor device
KR940012653A (en) Method of manufacturing thin film transistor
TW334602B (en) The self-aligned T-gate field transistor device and its producing method
KR970053068A (en) Manufacturing method of semiconductor device
KR970052835A (en) Transistor Formation Method Using Cobalt Silicide Film
KR970023879A (en) Method of manufacturing thin film transistor
KR970054478A (en) Metal silicide gate electrode formation method using double layer spacer
TW363250B (en) Manufacturing method of thin film transistor
KR910005441A (en) Buried contact formation method using silicide
KR970008818B1 (en) Semiconductor manufacture
KR940001450A (en) Gate manufacturing method of field effect transistor
KR910003786A (en) Gate electrode formation method
TW347568B (en) Process of anti-penetration ion implantation with reduced contact capacitance

Legal Events

Date Code Title Description
MK4A Expiration of patent term of an invention patent