TW231373B - Fabricating method for EEPROM IC with MONOS/MNOS structrue - Google Patents

Fabricating method for EEPROM IC with MONOS/MNOS structrue

Info

Publication number
TW231373B
TW231373B TW083101302A TW83101302A TW231373B TW 231373 B TW231373 B TW 231373B TW 083101302 A TW083101302 A TW 083101302A TW 83101302 A TW83101302 A TW 83101302A TW 231373 B TW231373 B TW 231373B
Authority
TW
Taiwan
Prior art keywords
eeprom
drain
silicon substrate
source
structrue
Prior art date
Application number
TW083101302A
Other languages
Chinese (zh)
Inventor
Jyh-Guang Lin
Herng-Sheng Hwang
Kuen-Luh Chen
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW083101302A priority Critical patent/TW231373B/en
Application granted granted Critical
Publication of TW231373B publication Critical patent/TW231373B/en

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10—Energy storage using batteries

Landscapes

  • Non-Volatile Memory (AREA)

Abstract

A fabricating method for EEPROM IC with MONOS/MNOS structrue includes thefollowing steps: 1. providing one silicon substrate slightly doped with the first conductiveimpurity; 2. putting on photoresist and exposing the designated area for source/drain,implanting ion, implanting the second conductive ion, then removingphotoresist; 3. proceeding heat oxidization to form buried source/drain and the thickoxide on its top, and thin oxide except the source/drain on the surfaceof silicon substrate; 4. etching the thin oxide on the surface of silicon substrate; 5. forming one tunnel oxide and depositing one nitride oxide, constitutingNO dielectric insulation layer structure, which can be used as floatinggate; 6. depositing the definition control gate layer; 7. providing appropriate metallurgy to connect elements to form the wanted EEPROM IC.
TW083101302A 1994-02-17 1994-02-17 Fabricating method for EEPROM IC with MONOS/MNOS structrue TW231373B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW083101302A TW231373B (en) 1994-02-17 1994-02-17 Fabricating method for EEPROM IC with MONOS/MNOS structrue

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW083101302A TW231373B (en) 1994-02-17 1994-02-17 Fabricating method for EEPROM IC with MONOS/MNOS structrue

Publications (1)

Publication Number Publication Date
TW231373B true TW231373B (en) 1994-10-01

Family

ID=51348642

Family Applications (1)

Application Number Title Priority Date Filing Date
TW083101302A TW231373B (en) 1994-02-17 1994-02-17 Fabricating method for EEPROM IC with MONOS/MNOS structrue

Country Status (1)

Country Link
TW (1) TW231373B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8143860B2 (en) 2005-01-19 2012-03-27 Atmel Corporation Single chip microcontroller including battery management and protection
US9331184B2 (en) 2013-06-11 2016-05-03 United Microelectronics Corp. Sonos device and method for fabricating the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8143860B2 (en) 2005-01-19 2012-03-27 Atmel Corporation Single chip microcontroller including battery management and protection
US9331184B2 (en) 2013-06-11 2016-05-03 United Microelectronics Corp. Sonos device and method for fabricating the same
US9508734B2 (en) 2013-06-11 2016-11-29 United Microelectronics Corp. Sonos device

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