TW284918B - Fabrication method of EPROM - Google Patents

Abstract

A fabrication method of EPROM comprises the steps of: supplying one silicon substrate with filed oxide for separatingpredetermined active area; forming gate oxide on the silicon substrate; depositing one polysilicon on the field oxide and gate oxide, through etching pattern making one portion of the polysilicon form one gate electrode; with the gate electrode as mask implanting ion into the silicon substrate to from source/drain electrode; forming one passivation layer; etching predetermined position of the above passivation layer to form one contact; depositing the above passivation layer and contact, and through etching pattern forming one insulator; depositing the above insulator and passivation layer, and through etching patterning one metal contact covering the insulator, completing the EPROM.