TW429532B - Method for preventing short circuit between polysilicon in the self-aligned contact etching process - Google Patents

Abstract

The present invention discloses a method for preventing the short circuit between polysilicon in the self-aligned contact etching process. The method includes the following steps: (1) providing a semiconductor substrate; (2) forming a thin oxide on the semiconductor substrate; (3) form a plurality of layered structure on the thin oxide; (4) employing the plurality of layered structure as a mask for ion implantation in the semiconductor substrate to form a lightly doped drain area; (5) depositing an uniformly covered silicon hydroxide on the plurality of layered structure and the exposed surface of the thin oxide; (6) depositing an insulation layer on the uniformly covered silicon hydroxide; (7) anisotropically etching the insulation layer to form a spacer on the sidewall of each layered structure; (8) employing the plurality of layered structure and spacer as a mask for ion implantation in the semiconductor substrate to form a heavily doped drain area; (9) forming a overlapped polysilicon inter-dielectric on the exposed surface of the entire formed structure; (10) etching the polysilicon inter-dielectric to form a contact between the layered structures to expose a part of the surface of the semiconductor substrate; finally, forming a conductive layer on the polysilicon inter-dielectric and the sidewall of the contact.