TW347560B - Process for producing stacked gate of an integrated circuit and structure thereof - Google Patents

Abstract

A process for producing stacked gate of an integrated circuit and structure thereof, which comprises the following steps: (a) a substrate, including a semiconductor substrate, a field oxide layer and a gate oxide layer, the field oxide layer being formed on the semiconductor substrate for being used as insulation for components, and the gate oxide layer being located on the semiconductor substrate; (b) cover the gate oxide layer with a polysilicon layer as the gate of the integrated circuit; (c) covering the polysilicon layer with an amorphous silicon layer capable of filling up the cavities on the surface of the polysilicon layer, thereby forming a planar surface; (d) defining a gate region of the integrated circuit by using lithography and etching techniques; (e) forming a side wall on both sides of the gate as a barrier between the gate and the integrated circuit; (f) performing ion implantation thereby forming an active region of the integrated circuit; and (g) performing a self-aligning silicide metal reaction on the surface of the active region of the integrated circuit thereby forming a silicide metal layer as the metal contact of the integrated circuit.