TW327702B - The damascene process - Google Patents

The damascene process

Info

Publication number
TW327702B
TW327702B TW086110700A TW86110700A TW327702B TW 327702 B TW327702 B TW 327702B TW 086110700 A TW086110700 A TW 086110700A TW 86110700 A TW86110700 A TW 86110700A TW 327702 B TW327702 B TW 327702B
Authority
TW
Taiwan
Prior art keywords
dopant
dielectric
define
semiconductor substrate
conductive layer
Prior art date
Application number
TW086110700A
Other languages
Chinese (zh)
Inventor
Jenn-Tsong Shyu
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW086110700A priority Critical patent/TW327702B/en
Application granted granted Critical
Publication of TW327702B publication Critical patent/TW327702B/en

Links

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  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

A damascene process, it includes following steps: a. Provide a semiconductor substrate, which has doped 1st dopant already; b. Form shallow trench isolation on semiconductor substrate to define an active area; c. Form gate oxide on active area; d. Form polysilicon gate on gate oxide; e. Implant 2nd dopant in between shallow trench and gate to form shallow dopant; f. Form spacer at side wall of polysilicon gate; g. Deposit dielectric on semiconductor substrate; h. Proceed CMP planarization on dielectric layer; i. Define dielectric pattern to form contact opening to expose source/drain and define a conductive layer; j. Implant 2nd type dopant into source/drain area to form source/drain; k. Deposit a thick conductive layer on dielectric; l. Proceed CMP planarization on conductive layer to form metal plug.
TW086110700A 1997-07-28 1997-07-28 The damascene process TW327702B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW086110700A TW327702B (en) 1997-07-28 1997-07-28 The damascene process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW086110700A TW327702B (en) 1997-07-28 1997-07-28 The damascene process

Publications (1)

Publication Number Publication Date
TW327702B true TW327702B (en) 1998-03-01

Family

ID=58262370

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086110700A TW327702B (en) 1997-07-28 1997-07-28 The damascene process

Country Status (1)

Country Link
TW (1) TW327702B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6258679B1 (en) * 1999-12-20 2001-07-10 International Business Machines Corporation Sacrificial silicon sidewall for damascene gate formation

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6258679B1 (en) * 1999-12-20 2001-07-10 International Business Machines Corporation Sacrificial silicon sidewall for damascene gate formation

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