TW327702B - The damascene process - Google Patents
The damascene processInfo
- Publication number
- TW327702B TW327702B TW086110700A TW86110700A TW327702B TW 327702 B TW327702 B TW 327702B TW 086110700 A TW086110700 A TW 086110700A TW 86110700 A TW86110700 A TW 86110700A TW 327702 B TW327702 B TW 327702B
- Authority
- TW
- Taiwan
- Prior art keywords
- dopant
- dielectric
- define
- semiconductor substrate
- conductive layer
- Prior art date
Links
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
A damascene process, it includes following steps: a. Provide a semiconductor substrate, which has doped 1st dopant already; b. Form shallow trench isolation on semiconductor substrate to define an active area; c. Form gate oxide on active area; d. Form polysilicon gate on gate oxide; e. Implant 2nd dopant in between shallow trench and gate to form shallow dopant; f. Form spacer at side wall of polysilicon gate; g. Deposit dielectric on semiconductor substrate; h. Proceed CMP planarization on dielectric layer; i. Define dielectric pattern to form contact opening to expose source/drain and define a conductive layer; j. Implant 2nd type dopant into source/drain area to form source/drain; k. Deposit a thick conductive layer on dielectric; l. Proceed CMP planarization on conductive layer to form metal plug.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW086110700A TW327702B (en) | 1997-07-28 | 1997-07-28 | The damascene process |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW086110700A TW327702B (en) | 1997-07-28 | 1997-07-28 | The damascene process |
Publications (1)
Publication Number | Publication Date |
---|---|
TW327702B true TW327702B (en) | 1998-03-01 |
Family
ID=58262370
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086110700A TW327702B (en) | 1997-07-28 | 1997-07-28 | The damascene process |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW327702B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6258679B1 (en) * | 1999-12-20 | 2001-07-10 | International Business Machines Corporation | Sacrificial silicon sidewall for damascene gate formation |
-
1997
- 1997-07-28 TW TW086110700A patent/TW327702B/en active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6258679B1 (en) * | 1999-12-20 | 2001-07-10 | International Business Machines Corporation | Sacrificial silicon sidewall for damascene gate formation |
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