TW331031B - The producing method for buried contact of IC - Google Patents

The producing method for buried contact of IC

Info

Publication number
TW331031B
TW331031B TW086111911A TW86111911A TW331031B TW 331031 B TW331031 B TW 331031B TW 086111911 A TW086111911 A TW 086111911A TW 86111911 A TW86111911 A TW 86111911A TW 331031 B TW331031 B TW 331031B
Authority
TW
Taiwan
Prior art keywords
polysilicon
buried contact
gate
gate oxide
separating
Prior art date
Application number
TW086111911A
Other languages
Chinese (zh)
Inventor
Jong-Jyh Liaw
Original Assignee
Taiwan Semiconductor Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg Co Ltd filed Critical Taiwan Semiconductor Mfg Co Ltd
Priority to TW086111911A priority Critical patent/TW331031B/en
Application granted granted Critical
Publication of TW331031B publication Critical patent/TW331031B/en

Links

Abstract

A producing method for buried contact of IC, by forming shallow trench on semiconductor substrate, and filling SiO2 into shallow trench as insulating layer of IC, then covering gate oxide and separating polysilicon layer on insulating surface. The gate oxide covers on semiconductor substrate surface, and the separating polysilicon layer covers on whole IC surface. The producing method includes following steps: a. Define photoresist on surface, remove portion of gate oxide, separating polysilicon and SiO2 material, define buried contact of IC, and form trench on SiO2 material as buried contact; b. Proceed isotropic etching, etch photoresist layer located at both sides of buried contact, to form photoresist with larger contact; c. Proceed large angle ion implantation, proceed ion implantation for buried contact region, and form doping region on semiconductor substrate; d. Deposit polysilicon to cover on IC surface as gate polysilicon; e. Deposit silicide to cover on polysilicon surface as gate silicide; f. Remove portion of gate oxide, separating polysilicon, polysilicon and silicide layer, and define the gate of IC.
TW086111911A 1997-08-20 1997-08-20 The producing method for buried contact of IC TW331031B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW086111911A TW331031B (en) 1997-08-20 1997-08-20 The producing method for buried contact of IC

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW086111911A TW331031B (en) 1997-08-20 1997-08-20 The producing method for buried contact of IC

Publications (1)

Publication Number Publication Date
TW331031B true TW331031B (en) 1998-05-01

Family

ID=58262674

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086111911A TW331031B (en) 1997-08-20 1997-08-20 The producing method for buried contact of IC

Country Status (1)

Country Link
TW (1) TW331031B (en)

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