TW256937B - Method of forming buried contact - Google Patents

Abstract

A method of forming buried contact without damage includes: (1) forming an oxide layer on a Si substrate; (2) forming one first conductive layer on the oxide layer; (3) determining the area to be formed as buried contact by photolithography; (4) removing the first conductive layer of the buried contact area located on the oxide layer; (5) implanting ion to the buried contact area bottom to form an ion implant area; (6) removing the oxide layer of the buried contact area located on the Si substrate to form a buried contact; (7) forming one second conductive layer on the buried contact and the first conductive layer; (8) forming one polysilicon layer on the second conductive layer; (9) determining the area to be formed as source/drain electrode by photolithography; (10) removing the polysilicon, the first conductive layer and the second conductive layer located on the source/drain electrode area to form source/drain electrode area.