TW258831B - New capacitor structure for DRAM and process thereof - Google Patents
New capacitor structure for DRAM and process thereofInfo
- Publication number
- TW258831B TW258831B TW82110002A TW82110002A TW258831B TW 258831 B TW258831 B TW 258831B TW 82110002 A TW82110002 A TW 82110002A TW 82110002 A TW82110002 A TW 82110002A TW 258831 B TW258831 B TW 258831B
- Authority
- TW
- Taiwan
- Prior art keywords
- forming
- insulator
- capacitor structure
- layer
- conductive layer
- Prior art date
Links
Landscapes
- Semiconductor Memories (AREA)
Abstract
A process of new capacitor structure for DRAM includes the following steps: (1) supplying a Si substrate, forming field oxide layer, transistor structure, and one insulator in sequences on the substrate with each transistor structure all with source/drain electrodes and one gate layer; (2) implementing ion implantation to the insulator surface with mass of ions; (3) opening contact opening on specified source/drain area; (4) forming one first conductive layer and defining needed structure; (5) removing the insulator part with implanted ion by etching; (6) forming one dielectric layer on exposed the first conductive layer adn insulator surface; (7) forming one second conductive layer on the dielectric layer surface to complete capacitor structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW82110002A TW258831B (en) | 1993-11-27 | 1993-11-27 | New capacitor structure for DRAM and process thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW82110002A TW258831B (en) | 1993-11-27 | 1993-11-27 | New capacitor structure for DRAM and process thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW258831B true TW258831B (en) | 1995-10-01 |
Family
ID=51401797
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW82110002A TW258831B (en) | 1993-11-27 | 1993-11-27 | New capacitor structure for DRAM and process thereof |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TW258831B (en) |
-
1993
- 1993-11-27 TW TW82110002A patent/TW258831B/en active
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