TW344135B - Process for producing capacitive electrode of DRAM - Google Patents

Process for producing capacitive electrode of DRAM

Info

Publication number
TW344135B
TW344135B TW085102005A TW85102005A TW344135B TW 344135 B TW344135 B TW 344135B TW 085102005 A TW085102005 A TW 085102005A TW 85102005 A TW85102005 A TW 85102005A TW 344135 B TW344135 B TW 344135B
Authority
TW
Taiwan
Prior art keywords
polysilicon layer
layer
forming
polysilicon
dram
Prior art date
Application number
TW085102005A
Other languages
Chinese (zh)
Inventor
Herng-Shenq Hwang
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW085102005A priority Critical patent/TW344135B/en
Application granted granted Critical
Publication of TW344135B publication Critical patent/TW344135B/en

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Abstract

A process for producing capacitive electrode of DRAM, which comprises the following steps: (a) providing a semiconductor substrate thereon formed with a field oxide layer, a transistor element and an insulative layer having a contact opening thereon; (b) forming a first polysilicon layer covering the insulative layer which is connected with the semiconductor substrate through the contact opening; (c) implanting arsenic ions into the first polysilicon layer, and uniformly distributing the ions through a tempering treatment; (d) forming a second polysilicon layer covering the first polysilicon layer; (e) implanting phosphorus ions into the second polysilicon layer; (f) etching the second and the first polysilicon layers thereby defining a pattern thereon and constituting a bottom plate of capacitance; and (g) isotropically etching the bottom plate in which the selection of the solvent used enables the etching rate towards the first polysilicon layer being higher than towards the second polysilicon layer thereby forming a undercut structure for increasing its surface area.
TW085102005A 1996-02-16 1996-02-16 Process for producing capacitive electrode of DRAM TW344135B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW085102005A TW344135B (en) 1996-02-16 1996-02-16 Process for producing capacitive electrode of DRAM

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW085102005A TW344135B (en) 1996-02-16 1996-02-16 Process for producing capacitive electrode of DRAM

Publications (1)

Publication Number Publication Date
TW344135B true TW344135B (en) 1998-11-01

Family

ID=58263713

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085102005A TW344135B (en) 1996-02-16 1996-02-16 Process for producing capacitive electrode of DRAM

Country Status (1)

Country Link
TW (1) TW344135B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112259453A (en) * 2020-10-22 2021-01-22 绍兴同芯成集成电路有限公司 Method for slotting surface of chip and chip

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112259453A (en) * 2020-10-22 2021-01-22 绍兴同芯成集成电路有限公司 Method for slotting surface of chip and chip

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