TW336355B - Process for producing semiconductor device having high resistance and low resistance - Google Patents

Abstract

A process for producing an integrated circuit having a polysilicon high resistance and a polysilicon low resistance formed therein, the process at least comprising: forming a first dielectric layer in a wafer as the insulation layer; forming a first polysilicon layer on the first dielectric layer; etching the first polysilicon layer by photolithography to form a conductive structure on the first dielectric layer; forming a second dielectric layer on the conductive structure; forming a second polysilicon layer on the second dielectric layer; applying first ion implantation to comprehensively implant ions into the second polysilicon layer; doping the second polysilicon layer to form a high resistance region and a low resistance region; the low resistance region being located on the conductive structure, the surface of the low resistance region being higher than the surface of the high resistance region; forming a photoresist to cover the high resistance region and expose the low resistance region; using the photoresist as the mask to carry out a second ion implantation to implant ions into the low resistance region; and removing the resistance.