TW348294B - Process for producing semiconductor capacitor by using HSG and nitrogen ion implantation - Google Patents
Process for producing semiconductor capacitor by using HSG and nitrogen ion implantationInfo
- Publication number
- TW348294B TW348294B TW085115187A TW85115187A TW348294B TW 348294 B TW348294 B TW 348294B TW 085115187 A TW085115187 A TW 085115187A TW 85115187 A TW85115187 A TW 85115187A TW 348294 B TW348294 B TW 348294B
- Authority
- TW
- Taiwan
- Prior art keywords
- forming
- polysilicon
- hsg
- ion implantation
- doped region
- Prior art date
Links
Landscapes
- Semiconductor Integrated Circuits (AREA)
Abstract
A process for producing a polysilicon structure of integrated circuit, which comprises: forming a dielectric layer on a semiconductor wafer; planarizing the dielectric layer; etching the dielectric layer by using photolithography and etching techniques thereby exposing the semiconductor wafer and forming a hole; forming a layer of polysilicon; forming dot particles; using the dot particles as a protective mask and implanting nitrogen atoms into the polysilicon thereby forming a nitrogen doped region; removing the dot particles and retaining only the nitrogen doped region; using the nitrogen doped region as an anti-oxidation mask, and oxidizing the polysilicon thereby forming a poly-oxide layer; and removing the polysilicon oxide layer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW085115187A TW348294B (en) | 1996-12-06 | 1996-12-06 | Process for producing semiconductor capacitor by using HSG and nitrogen ion implantation |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW085115187A TW348294B (en) | 1996-12-06 | 1996-12-06 | Process for producing semiconductor capacitor by using HSG and nitrogen ion implantation |
Publications (1)
Publication Number | Publication Date |
---|---|
TW348294B true TW348294B (en) | 1998-12-21 |
Family
ID=58264060
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW085115187A TW348294B (en) | 1996-12-06 | 1996-12-06 | Process for producing semiconductor capacitor by using HSG and nitrogen ion implantation |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW348294B (en) |
-
1996
- 1996-12-06 TW TW085115187A patent/TW348294B/en not_active IP Right Cessation
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |