TW348294B - Process for producing semiconductor capacitor by using HSG and nitrogen ion implantation - Google Patents

Process for producing semiconductor capacitor by using HSG and nitrogen ion implantation

Info

Publication number
TW348294B
TW348294B TW085115187A TW85115187A TW348294B TW 348294 B TW348294 B TW 348294B TW 085115187 A TW085115187 A TW 085115187A TW 85115187 A TW85115187 A TW 85115187A TW 348294 B TW348294 B TW 348294B
Authority
TW
Taiwan
Prior art keywords
forming
polysilicon
hsg
ion implantation
doped region
Prior art date
Application number
TW085115187A
Other languages
Chinese (zh)
Inventor
Horng-Huei Tzeng
Jyh-Yeuan Lu
Original Assignee
Vanguard Int Semiconduct Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vanguard Int Semiconduct Corp filed Critical Vanguard Int Semiconduct Corp
Priority to TW085115187A priority Critical patent/TW348294B/en
Application granted granted Critical
Publication of TW348294B publication Critical patent/TW348294B/en

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  • Semiconductor Integrated Circuits (AREA)

Abstract

A process for producing a polysilicon structure of integrated circuit, which comprises: forming a dielectric layer on a semiconductor wafer; planarizing the dielectric layer; etching the dielectric layer by using photolithography and etching techniques thereby exposing the semiconductor wafer and forming a hole; forming a layer of polysilicon; forming dot particles; using the dot particles as a protective mask and implanting nitrogen atoms into the polysilicon thereby forming a nitrogen doped region; removing the dot particles and retaining only the nitrogen doped region; using the nitrogen doped region as an anti-oxidation mask, and oxidizing the polysilicon thereby forming a poly-oxide layer; and removing the polysilicon oxide layer.
TW085115187A 1996-12-06 1996-12-06 Process for producing semiconductor capacitor by using HSG and nitrogen ion implantation TW348294B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW085115187A TW348294B (en) 1996-12-06 1996-12-06 Process for producing semiconductor capacitor by using HSG and nitrogen ion implantation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW085115187A TW348294B (en) 1996-12-06 1996-12-06 Process for producing semiconductor capacitor by using HSG and nitrogen ion implantation

Publications (1)

Publication Number Publication Date
TW348294B true TW348294B (en) 1998-12-21

Family

ID=58264060

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085115187A TW348294B (en) 1996-12-06 1996-12-06 Process for producing semiconductor capacitor by using HSG and nitrogen ion implantation

Country Status (1)

Country Link
TW (1) TW348294B (en)

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees