TW252216B - Process of lightly doped drain transistor component - Google Patents

Abstract

An improved process of lightly doped drain transistor component includes the following steps: - forming a gate oxide on substrate; - forming a conductive layer on the gate oxide surface, and defining pattern by etching; - with the conductive layer as mask implementing the first ion implantation to from lightly doped source/drain area; - forming a thin oxide on the exposed surface of conductive layer and gate oxide; - forming a conductive spacer on the thin oxide of the conductive sidewall part; - forming a insulating spacer on the sidewall of the conductive spacer; - etching to remove the exposed thin oxide to form the ditch between the conductive layer and the conductive spacer; - forming a conductive stuff to fill the ditch, and the conductive layer, conductive stuff and the conductive spacer commonly constitute a gate electrode; - with the gate electrode and the insulating spacer as mask implementing the second ion implantation to form source/drain area, completing the transistor component.