TW230267B - Fabricating method for WSi/polysilicon gate with sacrificing layer - Google Patents

Abstract

A fabricating method for metal oxide semiconductor field effect transistorwith lightly doped drain includes the following steps: 1. providing a semiconductor substrate; 2. forming gate structure on the semiconductor substrate, which includes onegate oxide layer, one polysilicon layer, one WSi layer and one TiN layer; 3. forming the first oxide layer on the side wall of gate structure and thesurface of semiconductor substrate; 4. forming a lightly doped area on the semiconductor substrate by ionimplanting method using the gate structure as mask; 5. forming a spacer oxide layer on the neighborhood of the gate structure'sside wall and the semiconductor substrate's surface; 6. forming the second oxide layer on the side wallf the gate structureand the exposed surface of semiconductor substrate; 7. forming a thickly doped source/drain area by ion implanting method usingthe gate structure with spacer oxide layer as mask.