TW347591B - Process for producing field effect devices - Google Patents

Abstract

A process for producing a field effect transistor, which comprises the following steps: forming an oxide layer required for isolating a field effect transistor on a silicon semiconductor wafer; forming a gate oxide layer of the field effect transistor; forming a polysilicon layer and a first dielectric layer, and etching off the first dielectric layer by using photolithography and etching techniques thereby forming a trench, the region of the trench being to be used as the gate of the field effect transistor; using the polysilicon layer and the first dielectric layer as the protective mask of ion implantation, and using an ion implantation technique for performing a channel doping which comprises forming a doping region only on the surface of the silicon semiconductor wafer in the trench; selectively growing a metal on the surface of the polysilicon layer in the trench; removing the first dielectric layer; using the metal as the etching protective mask, etching off the polysilicon layer thereby forming a recessed metal-polycide gate; and forming the source/drain.