TW347591B - Process for producing field effect devices - Google Patents
Process for producing field effect devicesInfo
- Publication number
- TW347591B TW347591B TW085105964A TW85105964A TW347591B TW 347591 B TW347591 B TW 347591B TW 085105964 A TW085105964 A TW 085105964A TW 85105964 A TW85105964 A TW 85105964A TW 347591 B TW347591 B TW 347591B
- Authority
- TW
- Taiwan
- Prior art keywords
- forming
- field effect
- trench
- effect transistor
- etching
- Prior art date
Links
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
- Thin Film Transistor (AREA)
Abstract
A process for producing a field effect transistor, which comprises the following steps: forming an oxide layer required for isolating a field effect transistor on a silicon semiconductor wafer; forming a gate oxide layer of the field effect transistor; forming a polysilicon layer and a first dielectric layer, and etching off the first dielectric layer by using photolithography and etching techniques thereby forming a trench, the region of the trench being to be used as the gate of the field effect transistor; using the polysilicon layer and the first dielectric layer as the protective mask of ion implantation, and using an ion implantation technique for performing a channel doping which comprises forming a doping region only on the surface of the silicon semiconductor wafer in the trench; selectively growing a metal on the surface of the polysilicon layer in the trench; removing the first dielectric layer; using the metal as the etching protective mask, etching off the polysilicon layer thereby forming a recessed metal-polycide gate; and forming the source/drain.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW085105964A TW347591B (en) | 1996-05-20 | 1996-05-20 | Process for producing field effect devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW085105964A TW347591B (en) | 1996-05-20 | 1996-05-20 | Process for producing field effect devices |
Publications (1)
Publication Number | Publication Date |
---|---|
TW347591B true TW347591B (en) | 1998-12-11 |
Family
ID=58263993
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW085105964A TW347591B (en) | 1996-05-20 | 1996-05-20 | Process for producing field effect devices |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW347591B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7157322B2 (en) | 1999-02-09 | 2007-01-02 | Nec Electronics Corporation | Semiconductor device and method for manufacturing same |
-
1996
- 1996-05-20 TW TW085105964A patent/TW347591B/en not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7157322B2 (en) | 1999-02-09 | 2007-01-02 | Nec Electronics Corporation | Semiconductor device and method for manufacturing same |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |