EP0772241B1 - Dispositif de puissance à haute densité en technologie MOS - Google Patents

Dispositif de puissance à haute densité en technologie MOS Download PDF

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Publication number
EP0772241B1
EP0772241B1 EP95830453A EP95830453A EP0772241B1 EP 0772241 B1 EP0772241 B1 EP 0772241B1 EP 95830453 A EP95830453 A EP 95830453A EP 95830453 A EP95830453 A EP 95830453A EP 0772241 B1 EP0772241 B1 EP 0772241B1
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EP
European Patent Office
Prior art keywords
power device
conductivity type
portions
stripes
technology power
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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EP95830453A
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German (de)
English (en)
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EP0772241A1 (fr
Inventor
Angelo Magri'
Ferruccio Frisina
Giuseppe Ferla
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STMicroelectronics SRL
CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
Original Assignee
STMicroelectronics SRL
CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
SGS Thomson Microelectronics SRL
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Priority to DE69533134T priority Critical patent/DE69533134T2/de
Priority to EP95830453A priority patent/EP0772241B1/fr
Priority to US08/738,584 priority patent/US6054737A/en
Priority to JP8288758A priority patent/JPH09252115A/ja
Publication of EP0772241A1 publication Critical patent/EP0772241A1/fr
Priority to US08/960,561 priority patent/US6030870A/en
Priority to US09/426,510 priority patent/US6548864B2/en
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Publication of EP0772241B1 publication Critical patent/EP0772241B1/fr
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
    • H01L29/0856—Source regions
    • H01L29/0869—Shape

Definitions

  • the present invention relates to a high density MOS technology power device.
  • MOS technology power devices are composed of a plurality of elementary functional units integrated in a same semiconductor chip.
  • Each elementary functional unit forms an elementary vertical MOSFET, and aLL the elementary functional units are connected in parallel; in this way, each elementary vertical MOSFET contributes for a respective fraction to the overaLL current of the power device.
  • a MOS technology power device chip comprises a lightly doped semiconductor layer of a first conductivity type forming a common drain layer for all the elementary vertical MOSFETs; the lightly doped layer is superimposed over a heavily doped semiconductor substrate.
  • Each elementary functional unit comprises a body region of a second conductivity type formed in the drain layer.
  • the body region of the elementary functional units has a polygonal Layout, for example square or hexagonal; for this reason, the elementary functional units are also called “elementary ceLLs".
  • MOS technology power devices are also known wherein the body region of the elementary functional units is an elongated stripe.
  • the vertical structure of the elementary functional units i.e. the cross-section of the cell or of the stripes
  • Fig. 1 wherein the heavily doped semiconductor substrate is indicated by 1 and the common drain layer is indicated by 2.
  • the body region 3 of the elementary functional unit comprises a central heavily doped portion 4, caLLed "deep body region", and a lateral portion 5, having a lower dopant concentration, forming the channel region of the elementary vertical MOSFET; the doping level of the lateral portion 5 of the body region determines the threshold voltage of the power device.
  • two source regions 6 of the same conductivity type as the common drain layer 2 are formed inside the body region 3.
  • a thin oxide layer 7 (gate oxide) and a poLysiLicon layer 8 (the gate electrode of the power device) cover the surface of the portions of the drain layer 1 between the body regions 3, and extend over the lateral portions 5 of the body region.
  • the poLysiLicon layer 8 is covered by a dielectric layer 9 in which contact windows 11 are opened over each body region to allow a superimposed metal layer 10 (the source electrode of the power device) to come into contact with the source regions 6 and with the deep body region 4.
  • the short-circuit between the source regions and the body region is essential to prevent a parasitic bipolar junction transistor having emitter, base and collector formed by the source regions, the body region and the drain Layer 1 from triggering on; the heavily doped deep body region 4 increases the ruggedness of the power device because it reduces the base resistance of such a parasitic transistor.
  • This process involves the use of four photolithographic masks: a first mask is used for the formation of the deep body regions 4; a second mask is used to selectively etch the poLysiLicon and oxide layers; a third mask is used to form the source regions 6 (the mask for the introduction of the dopants forming the source regions is provided partially by the poLysiLicon and oxide layers, and partially by photoresist isles over the middle portion of the deep body regions); a fourth mask is used to open the contact windows in the dielectric Layer.
  • the electrical parameters to be optimized are the output resistance in the on condition (Ron), the gate-to-drain capacitance (feedback capacitance) and the gate-to-source capacitance (input capacitance).
  • the Rc component depends on process parameters such as the dopant concentration of the channel region (i.e. on the threshold voltage of the MOS power device) and on the channel length; the Racc component depends on the distance between two adjacent body regions, and decreases as such distance decreases; the Rjfet component depends on the resistivity of the drain layer and on the distance between the body regions, and increases as such a distance decreases; the Repy component depends on the resistivity and thickness of the drain Layer, two parameters which determine the maximum voltage that can be sustained by the MOS power device.
  • the Ron is inversely proportional to the overall channel perimeter of the MOS power device, i.e. to the sum of the channel perimeters of the individual elementary functional units that compose the MOS power device. The Longer the channel perimeter per unit area of the MOS power device, the lower the Ron per unit area.
  • the current structure of the elementary functional units poses however some Limitations to the further reduction of the dimensions thereof. These Limitations are essentially determined by the resolution and the alignment characteristics of the photolithographic apparatus. Referring again to Fig. 1, it appears that the dimension c must be sufficiently Large to guarantee that the metal layer contacts the body region, and can be scaled down to the resolution limit of the photolithographic apparatus; the dimension b must be sufficiently large to guarantee that the metal layer contacts the source region, and must also take into account the alignment errors between the mask defining the contact window 11 in the dielectric layer and the mask for the formation of the source regions; the dimension t must be sufficiently Large to guarantee that the poLysiLicon layer is electrically insulated from the metal layer, and must also take into account the alignment errors between the masks for the definition of the windows in the poLysiLicon layer and in the dielectric Layer.
  • the current structure of the elementary functional units does not allow to reduce the distance between the elementary functional units below specified values that depend on the voltage rating of the MOS power device (approximately 5 ⁇ m for low-voltage devices and from 10 ⁇ m to 30 ⁇ m for medium- and high-voltage devices).
  • the reduction of such a distance below said specified values would in fact cause a rapid increase in the Rjfet component of the Ron of the MOS power device.
  • WO-A-9411904 discloses a device and a method for improving current carrying capability in a semiconductor device.
  • EP-A-543313 discloses a field effect transistor having pack gate held in contact with source electrode without variation in source contact resistance.
  • EP-A-252236 discloses a vertical MOS type semiconductor device.
  • EP-A-4345265 and EP-A-405138 disclose a MOS technology power device comprising a plurality of MOS power transistors formed in a semiconductor layer of a first conductivity type.
  • Each MOS power transistor comprises a body region of a second conductivity type formed in the semiconductor material layer; the body region has the form of a body stripes elongated in a longitudinal direction on a surface of the semiconductor material layer.
  • the body stripe includes a plurality of source portions doped with dopants of the first conductivity type.
  • the plurality of source portions is intercalated in the longitudinal direction with a plurality of body portions of the body stripe wherein no dopants of the first conductivity type are provided.
  • Fig. 1 is a cross-sectional view of a MOS technology power device chip according to the prior art.
  • the chip comprises a heavily doped semiconductor substrate 1, over which a LightLy doped epitaxial layer 2 of a first conductivity type is formed.
  • the MOS power device is composed of a pLuraLity of elementary functional units, formed in the epitaxial Layer 2. Two of said elementary functional units are visible in Fig. 1.
  • Each elementary functional units comprises a body region 3 of a second conductivity type formed in the epitaxial layer 2.
  • the body regions 3 can have a polygonal Layout (for example square or hexagonal), or can be elongated stripes (in this case, Fig. 1 is a cross-section in a direction transversal to the stripes).
  • the body region 3 of the elementary functional unit comprises a central heavily doped portion 4, called "deep body region", and a lateral portion 5, having a lower dopant concentration, forming a channel region; the doping level of the LateraL portion 5 of the body region determines the threshold voltage of the power device.
  • two source regions 6 of the same conductivity type as the epitaxial Layer 2 are formed inside the body region 3.
  • a thin oxide layer 7 (gate oxide) and a poLysiLicon Layer 8 cover the surface of the portions of the drain Layer 2 between the body regions 3, and extend over the lateral portions 5 of the body regions 3.
  • Windows 12 are provided in the polysilicon and gate oxide layers 8, 7 over the body regions 3.
  • the poLysiLicon Layer 8 is covered by a dielectric layer 9 in which contact windows 11 are opened over each body region 3, to allow a superimposed metal layer 10 (the source electrode of the power device) to come into contact with the source regions 6 and the deep body regions 4.
  • the size of an elementary functional unit of the MOS power device substantially corresponds to the dimension Lp of the window 12 in the poLysiLicon and gate oxide Layers 8 and 7.
  • Lp a + 2t
  • a is the dimension of the contact window 11 in the dielectric Layer 9
  • t is distance between the edge of the poLysiLicon layer and the edge of the dielectric layer.
  • Lp c + 2b + 2t.
  • the dimension of the elementary functional units is therefore determined by the three feature sizes c, b and t.
  • Fig. 2 is a top-plan view of a portion of a MOS technology power device according to a first embodiment of the present invention.
  • the MOS power device comprises an epitaxial layer 2 forming a common drain layer; the epitaxial layer 2 is of the N conductivity type for an N channel device and of the P conductivity type for a P channel device.
  • the epitaxial layer 2 is formed over a heavily doped substrate 1; in the case of a power MOSFET the substrate 1 is of the same conductivity type as the epitaxial layer 2, while in the case of an Insulated Gate Bipolar Transistor (IGBT) the substrate 1 and the epitaxial layer 2 are of opposite conductivity types.
  • IGBT Insulated Gate Bipolar Transistor
  • the MOS power device comprises a pLuraLity of elementary functional units formed in the drain layer 2.
  • Each elementary functional unit comprises a body region 3 of the opposite conductivity type of the drain layer 2; the body regions 3 have the form of substantially parallel elongated stripes spaced apart of a distance d.
  • a pLuraLity of heavily doped regions 60 of the opposite conductivity type of the stripe 3 is provided inside each body stripe 3; the regions 60 extend in the longitudinal direction of the body stripes 3, and are intercalated with transversal portions 40 of the body stripe 3.
  • the regions 60 form source regions of the MOS power device.
  • the surface of the drain layer 2 is covered by a silicon dioxide layer 7 (gate oxide) and a polysilicon layer 8 forming the gate electrode of the MOS power device; the gate oxide layer 7 and the polysilicon layer 8 extend over the stripes 3 to the edges of the regions 60.
  • a dielectric layer 9 covers the poLysiLicon Layer 8.
  • ELongated openings 11 are provided in the dielectric layer 9 over the central portion of the stripes 3 to allow a metal layer (not shown) forming the source electrode of the MOS power device to contact both the source regions 60 and the transversal portions 40 of the body stripes 3.
  • the source regions 60 are intercalated in the longitudinal direction of the body stripes 3 with the transversal portions 40 of the body stripes 3 wherein the source regions are absent, even if the transversal dimension a of the contact window 11 is scaled down to the optical resolution limit of the photolithographic apparatus used for the fabrication of the MOS power device, the contact of the source metal layer (not shown) to both the source regions 60 and the body region 3 of the elementary functional units is guaranteed.
  • the channel perimeter is proportional to the ratio Lu/(Lu + s) where Lu is the length of one source region 60 in the longitudinal direction and s is the distance between two consecutive source regions 60 (s is the dimension of the transversal portions 40 of the body stripes wherein the source regions are absent, and the transversal portions 40 of the body stripes 3 are functionally inactive areas from the point of view of the current conduction).
  • Ron of the MOS power device is inversely proportional to the overall channel perimeter of the power device, it appears that the best result for Ron is achieved by making s as smaLL as possible and Lu as Large as possible; the minimum value for s is given by the optical resolution limit of the photolithographic apparatus, while the maximum value for Lu depends on the particular technology and voltage rating of the MOS power device.
  • the source regions 60 in adjacent body stripes 3 are aligned in the transversal direction, i.e. the source regions 60 in adjacent body stripes 3 are one in front of the other. This means that in the portions of the drain Layer 2 comprised between adjacent body stripes 3 there are two current fluxes I (Fig. 3), coming from the facing source regions 60. The distance d between adjacent body stripes 3 cannot therefore be reduced too much.
  • Fig. 5 is a top-plan view showing the Layout and the reciprocal alignment of the photolithographic masks used to fabricate the MOS technology power device structure according to this first embodiment.
  • 15 indicates the mask for the selective etching of the poLysiLicon and gate oxide layers
  • 16 indicates the mask for the selective introduction of the dopants forming the source regions 60
  • 17 in dash-and-dot line indicates the mask for the opening of the contact windows 11 in the dielectric layer 9.
  • One suitable process for the fabrication of the MOS technology power device according to the present invention comprises substantially the same steps as the process for the fabrication of the known MOS technology power device structures, and specificaLLy:
  • a preferred manufacturing process allows to eliminate the need of the mask for the formation of the heavily doped deep body portions of the body stripes, using the poLysiLicon Layer as a mask for the formation of both the heavily doped deep body portions and the channel portions of the body stripes.
  • Two alternative of this preferred process wiLL be now described.
  • a first possibility is to implant a heavy dose of dopants of the opposite conductivity type of the drain layer at an high energy, using as already said the poLysiLicon Layer as a mask (so that the dopants are introduced into the drain Layer through the elongated windows in the poLysiLicon Layer).
  • dopants for example, boron ions can be implanted in a dose of 10 14 -10 15 cm -2 at an energy of 100-300 keV.
  • the distribution of the implanted ions Due to the high implantation energy, the distribution of the implanted ions has a peak Located at a prescribed distance from the surface of the epitaxial layer, namely under the source regions which will be formed in a Later step of the process; in addition, after the implant the distribution of the implanted ions is laterally aligned with the edges of the windows in the poLysiLicon Layer.
  • the implanted ions are then made to diffuse by means of a thermal process to form the body stripes with a central heavily doped deep body portion, and two lateral Less heavily doped channel portions.
  • the thermal process must have a suitable thermal budget, so that in the channel portions the dopant concentration is suitable to obtain the desired threshold voltage for the MOS power device; a suitable thermal budget is 1050-1100 °C for 0.5 to 2 hours.
  • the first implant can involve a dose of dopants in the range 10 13 -10 14 atoms/cm -2 with an energy of approximately 80 keV and is used to control the dopant concentration at the surface of the body stripes, exspecially in the channel portions, to set the desired threshold voltage of the MOS power device.
  • the second implant involves for example a dose of dopant in the range 10 14 -10 15 atoms/cm 2 with an energy comprised between 100 keV and 300 keV, such that the peak concentration of the dopants can be Located at a prescribed depth, namely under the source regions which will be formed in a Later step.
  • a subsequent thermal diffusion process at a temperature in the range 1050-1100 °C for 0.5 to 2 hours determines the LateraL diffusion of the dopant introduced with the first implant, to form the channel portions of the body stripes extending under the gate oxide Layer; the vertical diffusion of the dopant introduced with the second implant does not alter the threshold voltage of the MOS power device, because the dopant ions reach the surface with a concentration lower than the concentration of the dopant introduced with the first implant (in fact, the peak dopant concentration of the dopant introduced with the first implant is located substantially at the surface of the drain layer 2).
  • the vertical and lateral diffusion of the dopants introduced with the second implant forms the heavily doped deep body portions of the body stripes, reducing the resistivity of the body stripes under the source regions.
  • Fig. 6 is a top-plan view of a portion of a MOS power device according to a second embodiment of the present invention.
  • This embodiment is substantially similar to that of Fig. 2, the only difference residing in the fact that the source regions 60 in a given body stripe 3 are shifted in the longitudinal direction with respect to the source regions 60 of the adjacent body stripes 3.
  • Fig. 10 similarly to Fig. 5, is a top-plan view showing the Layout and the reciprocal alignment of some photolithographic masks used to form the MOS technology power device structure according to this second embodiment.
  • 15 indicates the mask for the selective etching of the polysilicon layer
  • 16 indicates the mask for the selective introduction of the dopants forming the source regions 60
  • 17 indicates (in dash-and-dot line) the mask for the opening of the contact windows 11 in the dielectric Layer 9.
  • the distance e between the windows in the polysilicon Layer must be larger than twice the alignment tolerance Lt of the photolithographic apparatus, to prevent that a misalignment in the transversal direction between the mask 15 and the mask 16 gives rise to an incorrect Layout.
  • Lt the alignment tolerance of the photolithographic apparatus
  • Fig. 11 is a top-plan view of a portion of a non-claimed MOS technology power device, which is substantially a variant of the embodiment of Fig. 6 in that the Length s of the transversal portions 40 of the body stripes 3 wherein the source regions 60 are absent is the same as the length Lu of the source regions 60.
  • the channel perimeter for a single elementary functional unit (body stripe) is approximately a half of that achievable with the structures of the embodiments, but with the distance d between adjacent body stripes reduced to a half, because the source regions 60 of a given body stripe 3 faces the transversal portions 40 of the adjacent body stripes 3; as visible in Figs. 12 and 13, the portions of the drain Layer 2 comprised between the body stripes 3 are always interested by a current flux I coming from only one side.
  • Fig. 14 is analogous to Figs. 5 and 10, and is a top-plan view showing the Layout and the reciprocal alignment of some photolithographic masks used to fabricate the structure of Fig. 11.
  • the mask for the selective etching of the poLysiLicon layer is indicated with 15
  • the mask for the selective introduction of the dopants for the source regions 60 is indicated with 16
  • the mask for the opening of the contact windows 11 is indicated with 17.
  • the distance e between adjacent windows in the poLysiLicon layer must be greater than twice the alignment tolerance Lt of the photolithographic apparatus in use, to take into account the possible alignment errors between the mask 15 and the mask 16.
  • Fig. 15 is a top-plan view of a portion of a non-claimed MOS power device whereih each body stripe 3 is ideally divided into two longitudinal half-stripes 3' and 3", and in each half-stripe source regions 61 of the opposite conductivity type of the body stripe 3 are intercalated in the longitudinal direction with body portions 41 of the half-stripe wherein the source regions are absent.
  • the source regions 61 in one half-stripe are contiguous to the body portions 41 of the other half-stripe, and face the body portions 41 of the adjacent body stripe 3.
  • Fig. 18 is analogous to Figs. 5, 10 and 14, and is a top-plan view showing the Layout and the reciprocal alignment of some photolithographic masks used to fabricate the structure of Fig. 15.
  • 15 indicates the mask for the selective etching of the poLysiLicon layer
  • 16 indicates the mask for the formation of the source regions 61
  • 17 indicates the mask (in dash-and-dot Line) for the opening of the contact windows 11 in the dielectric layer.
  • the Layout of the three masks is substantially the same as that of Fig. 14, the only difference being the different alignment of mask 16 with respect to mask 15.
  • the distance e between adjacent windows in the poLysiLicon layer is greater than twice the alignment tolerance Lt of the photolithographic apparatus in use, but also the dimension a of the contact window must be greater than 2Lt, to prevent that alignment errors between mask 15 and mask 16 determine an incorrect Layout.
  • the minimum value for dimension a is the optical resolution Limit of the photolithographic apparatus, and since the alignment tolerance Lt is approximately 1/4 the optical resolution limit, the necessity to take into account the possible alignment errors between masks 15 and 16 does not prevent to shrink the transversal dimension of the elementary functional units: the contact of the source metal layer (not shown) to the source regions 61 and to the body portions 41 is guaranteed even if the dimension a of the contact window 11 is reduced to the optical resolution limit of the photolithographic apparatus.
  • Fig. 19 is a top-plan view of a non-claimed MOS power device wherein each body stripe 3 is divided in two half-stripes 3' and 3"; in one (3") of the two half-stripes 3', 3", a source region 62 is provided that extends substantiaLLy for the whole length of the body stripe 3, while in the other half-stripe (3'), no source region is provided at all.
  • a source region 62 is provided that extends substantiaLLy for the whole length of the body stripe 3, while in the other half-stripe (3'), no source region is provided at all.
  • Fig. 21 is a top-plan view showing the Layout and the reciprocal alignment of the photolithographic masks used to form the structure of Fig. 19.
  • the same numerals as in Figs. 5, 10, 14 and 18 have been used.
  • both the distance e between adjacent openings in the poLysiLicon layer and the dimension a of the contact window 11 in the dielectric layer 9 must be at Least twice the alignment tolerance Lt of the photolithographic apparatus in use, to prevent Layout erros due to the alignment errors between the mask 15 and the mask 16.

Claims (9)

  1. Dispositif de puissance formé en technique MOS, comprenant une pluralité de transistors qui contribuent, pour des fractions respectives, au courant global du dispositif de puissance et qui sont formés dans une couche (2) de matériau semiconducteur d'un premier type de conductivité, chaque transistor comprenant une région corps (3) du deuxième type de conductivité, formée dans la couche (2) de matériau semiconducteur, la région corps (3) ayant la forme d'une pluralité de bandes de corps sensiblement parallèles (3) qui sont allongées suivant la direction longitudinale sur une surface de la couche de matériau semiconducteur, chaque corps s'étendant de manière continue suivant ladite direction longitudinale pour sensiblement toute la longueur de la bande et comportant au moins une pluralité de parties source (60) dopées au moyen d'agents dopants du premier type de conductivité, ladite ou lesdites parties source (60) étant alignées suivant ladite direction longitudinale de la bande de corps et intercalées dans la direction longitudinale avec au moins une pluralité de parties corps (40) de la bande de corps (3), où aucun agent dopant du premier type de conductivité n'est fourni, ladite pluralité de parties source (60) et ladite pluralité de parties corps (40) s'étendant suivant une direction qui est transversale par rapport aux bandes de corps (3), les parties source étant centrées dans les bandes de corps dans ladite direction transversale par rapport aux bandes de corps, le dispositif comprenant en outre une pluralité de bandes diélectriques (9) qui sont sensiblement parallèles à la pluralité de bandes de corps allongées (3) et disposées en alternance avec celles-ci, ladite pluralité de bandes diélectriques (9) s'étendant de manière continue le long de ladite direction longitudinale pour sensiblement toute la longueur de la bande et étant disposées de façon à former des fenêtres de contact allongées (11) sur la partie centrale de chaque bande de corps allongée (3), lesdites fenêtres de contact allongées (11) produisant des régions de contact à la fois pour les parties source (60) et les parties corps transversales (40) des bandes de corps (3), lesdites régions de contact étant isolées les unes des autres, le dispositif étant caractérisé en ce que la dimension (Lu) desdites parties source (60) suivant la direction longitudinale est plus grande que la ou les corps (40) suivant la direction longitudinale de façon à maximiser le périmètre de canal.
  2. Dispositif de puissance MOS selon la revendication 1, caractérisé en ce que les parties source (60) et les parties corps (40) d'une bande de corps (3) sont sensiblement alignées, dans la direction transversale, par rapport à leur partie centrale, respectivement avec les parties source (60) et les parties corps (40) de bandes de corps adjacentes (3).
  3. Dispositif de puissance MOS selon la revendication 2, caractérisé en ce que les parties source (60) et les parties corps (40) d'une bande de corps (3) sont sensiblement alignées, dans la direction transversale par rapport à leur partie centrale, respectivement avec les parties corps (40) et les parties source (60) de bandes de corps adjacentes (60).
  4. Dispositif de puissance MOS selon l'une quelconque des revendications précédentes, caractérisé en ce que ladite couche (2) de matériau semiconducteur est superposée à un substrat (1) de matériau semiconducteur.
  5. Dispositif de puissance MOS selon la revendication 4, caractérisé en ce que ladite couche (2) de matériau semiconducteur est légèrement dopée, et ledit substrat (1) de matériau semiconducteur est fortement dopé.
  6. Dispositif de puissance MOS selon la revendication 5, caractérisé en ce que ledit substrat (1) de matériau semiconducteur est du premier type de conductivité.
  7. Dispositif de puissance MOS selon la revendication 5, caractérisé en ce que ledit substrat (1) de matériau semiconducteur est du deuxième type de conductivité.
  8. Dispositif de puissance MOS selon l'une quelconque des revendications précédentes, caractérisé en ce que ledit premier type de conductivité est le type de conductivité N et ledit deuxième type de conductivité est le type de conductivité P.
  9. Dispositif de puissance MOS selon l'une quelconque des revendications 1 à 7, caractérisé en ce que ledit premier type de conductivité est le type de conductivité P et le deuxième type de conductivité est le type de conductivité N.
EP95830453A 1995-10-30 1995-10-30 Dispositif de puissance à haute densité en technologie MOS Expired - Lifetime EP0772241B1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
DE69533134T DE69533134T2 (de) 1995-10-30 1995-10-30 Leistungsbauteil hoher Dichte in MOS-Technologie
EP95830453A EP0772241B1 (fr) 1995-10-30 1995-10-30 Dispositif de puissance à haute densité en technologie MOS
US08/738,584 US6054737A (en) 1995-10-30 1996-10-29 High density MOS technology power device
JP8288758A JPH09252115A (ja) 1995-10-30 1996-10-30 Ｍｏｓ技術パワーデバイス
US08/960,561 US6030870A (en) 1995-10-30 1997-10-29 High density MOS technology power device
US09/426,510 US6548864B2 (en) 1995-10-30 1999-10-26 High density MOS technology power device

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Application Number Priority Date Filing Date Title
EP95830453A EP0772241B1 (fr) 1995-10-30 1995-10-30 Dispositif de puissance à haute densité en technologie MOS

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EP0772241A1 EP0772241A1 (fr) 1997-05-07
EP0772241B1 true EP0772241B1 (fr) 2004-06-09

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US6030870A (en) 2000-02-29
EP0772241A1 (fr) 1997-05-07
DE69533134D1 (de) 2004-07-15
DE69533134T2 (de) 2005-07-07
US20010012654A1 (en) 2001-08-09
US6054737A (en) 2000-04-25
US6548864B2 (en) 2003-04-15
JPH09252115A (ja) 1997-09-22

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