JPS53135284A - Production of field effect transistor - Google Patents
Production of field effect transistorInfo
- Publication number
- JPS53135284A JPS53135284A JP5023277A JP5023277A JPS53135284A JP S53135284 A JPS53135284 A JP S53135284A JP 5023277 A JP5023277 A JP 5023277A JP 5023277 A JP5023277 A JP 5023277A JP S53135284 A JPS53135284 A JP S53135284A
- Authority
- JP
- Japan
- Prior art keywords
- type
- production
- field effect
- effect transistor
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 title 1
- 238000009792 diffusion process Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0873—Drain regions
- H01L29/0878—Impurity concentration or distribution
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
- H01L29/7832—Field effect transistors with field effect produced by an insulated gate with multiple gate structure the structure comprising a MOS gate and at least one non-MOS gate, e.g. JFET or MESFET gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:to prodece a high-performence cascode-connection FET unit with avoiding the trouble of positioning accuracy by providing a ring-shaped or comb-shaped P-type layer on the N-type epi-layer and forming N-type islands between N-type layers by diffusion simultaneously with providing N-type layers in the P-type layer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5023277A JPS53135284A (en) | 1977-04-30 | 1977-04-30 | Production of field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5023277A JPS53135284A (en) | 1977-04-30 | 1977-04-30 | Production of field effect transistor |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62178224A Division JPS6387771A (en) | 1987-07-17 | 1987-07-17 | Field effect transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS53135284A true JPS53135284A (en) | 1978-11-25 |
Family
ID=12853264
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5023277A Pending JPS53135284A (en) | 1977-04-30 | 1977-04-30 | Production of field effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS53135284A (en) |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62104068A (en) * | 1985-10-30 | 1987-05-14 | Mitsubishi Electric Corp | Semiconductor integrated circuit device |
US4952991A (en) * | 1988-08-25 | 1990-08-28 | Nec Corporation | Vertical field-effect transistor having a high breakdown voltage and a small on-resistance |
US5191396A (en) * | 1978-10-13 | 1993-03-02 | International Rectifier Corp. | High power mosfet with low on-resistance and high breakdown voltage |
US5338961A (en) * | 1978-10-13 | 1994-08-16 | International Rectifier Corporation | High power MOSFET with low on-resistance and high breakdown voltage |
US5663080A (en) * | 1991-11-29 | 1997-09-02 | Sgs-Thomson Microelectronics, S.R.L. | Process for manufacturing MOS-type integrated circuits |
US5798554A (en) * | 1995-02-24 | 1998-08-25 | Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno | MOS-technology power device integrated structure and manufacturing process thereof |
US5817546A (en) * | 1994-06-23 | 1998-10-06 | Stmicroelectronics S.R.L. | Process of making a MOS-technology power device |
US5841167A (en) * | 1995-12-28 | 1998-11-24 | Sgs-Thomson Microelectronics S.R.L. | MOS-technology power device integrated structure |
US5869371A (en) * | 1995-06-07 | 1999-02-09 | Stmicroelectronics, Inc. | Structure and process for reducing the on-resistance of mos-gated power devices |
US5981343A (en) * | 1995-10-30 | 1999-11-09 | Sgs-Thomas Microelectronics, S.R.L. | Single feature size mos technology power device |
US6030870A (en) * | 1995-10-30 | 2000-02-29 | Sgs-Thomson Microelectronics, S.R.L. | High density MOS technology power device |
US6228719B1 (en) | 1995-11-06 | 2001-05-08 | Stmicroelectronics S.R.L. | MOS technology power device with low output resistance and low capacitance, and related manufacturing process |
US6492691B2 (en) | 1998-05-26 | 2002-12-10 | Stmicroelectronics S.R.L. | High integration density MOS technology power device structure |
-
1977
- 1977-04-30 JP JP5023277A patent/JPS53135284A/en active Pending
Cited By (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5191396A (en) * | 1978-10-13 | 1993-03-02 | International Rectifier Corp. | High power mosfet with low on-resistance and high breakdown voltage |
US5338961A (en) * | 1978-10-13 | 1994-08-16 | International Rectifier Corporation | High power MOSFET with low on-resistance and high breakdown voltage |
US5598018A (en) * | 1978-10-13 | 1997-01-28 | International Rectifier Corporation | High power MOSFET with low on-resistance and high breakdown voltage |
US5742087A (en) * | 1978-10-13 | 1998-04-21 | International Rectifier Corporation | High power MOSFET with low on-resistance and high breakdown voltage |
JPS62104068A (en) * | 1985-10-30 | 1987-05-14 | Mitsubishi Electric Corp | Semiconductor integrated circuit device |
US4952991A (en) * | 1988-08-25 | 1990-08-28 | Nec Corporation | Vertical field-effect transistor having a high breakdown voltage and a small on-resistance |
US5663080A (en) * | 1991-11-29 | 1997-09-02 | Sgs-Thomson Microelectronics, S.R.L. | Process for manufacturing MOS-type integrated circuits |
US5696399A (en) * | 1991-11-29 | 1997-12-09 | Sgs-Thomson Microelectronics S.R.L. | Process for manufacturing MOS-type integrated circuits |
US5817546A (en) * | 1994-06-23 | 1998-10-06 | Stmicroelectronics S.R.L. | Process of making a MOS-technology power device |
US5798554A (en) * | 1995-02-24 | 1998-08-25 | Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno | MOS-technology power device integrated structure and manufacturing process thereof |
US6111297A (en) * | 1995-02-24 | 2000-08-29 | Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno | MOS-technology power device integrated structure and manufacturing process thereof |
US6046473A (en) * | 1995-06-07 | 2000-04-04 | Stmicroelectronics, Inc. | Structure and process for reducing the on-resistance of MOS-gated power devices |
US5869371A (en) * | 1995-06-07 | 1999-02-09 | Stmicroelectronics, Inc. | Structure and process for reducing the on-resistance of mos-gated power devices |
US5981343A (en) * | 1995-10-30 | 1999-11-09 | Sgs-Thomas Microelectronics, S.R.L. | Single feature size mos technology power device |
US5985721A (en) * | 1995-10-30 | 1999-11-16 | Sgs-Thomson Microelectronics, S.R.L. | Single feature size MOS technology power device |
US6030870A (en) * | 1995-10-30 | 2000-02-29 | Sgs-Thomson Microelectronics, S.R.L. | High density MOS technology power device |
US6054737A (en) * | 1995-10-30 | 2000-04-25 | Sgs-Thomson Microelectronics S.R.L. | High density MOS technology power device |
US6064087A (en) * | 1995-10-30 | 2000-05-16 | Sgs-Thomson Microelectronics, S.R.L. | Single feature size MOS technology power device |
US6228719B1 (en) | 1995-11-06 | 2001-05-08 | Stmicroelectronics S.R.L. | MOS technology power device with low output resistance and low capacitance, and related manufacturing process |
US6051862A (en) * | 1995-12-28 | 2000-04-18 | Sgs-Thomson Microelectronics S.R.L. | MOS-technology power device integrated structure |
US5841167A (en) * | 1995-12-28 | 1998-11-24 | Sgs-Thomson Microelectronics S.R.L. | MOS-technology power device integrated structure |
US6492691B2 (en) | 1998-05-26 | 2002-12-10 | Stmicroelectronics S.R.L. | High integration density MOS technology power device structure |
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