JPS5387181A - Complementary type mos transistor - Google Patents

Complementary type mos transistor

Info

Publication number
JPS5387181A
JPS5387181A JP222977A JP222977A JPS5387181A JP S5387181 A JPS5387181 A JP S5387181A JP 222977 A JP222977 A JP 222977A JP 222977 A JP222977 A JP 222977A JP S5387181 A JPS5387181 A JP S5387181A
Authority
JP
Japan
Prior art keywords
mos transistor
type mos
complementary type
pmosfet
connection layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP222977A
Other languages
Japanese (ja)
Other versions
JPS5931987B2 (en
Inventor
Chikahisa Kusayanagi
Hiroshi Iioka
Shinichi Miyake
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Original Assignee
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Sanyo Electric Co Ltd, Sanyo Electric Co Ltd filed Critical Tokyo Sanyo Electric Co Ltd
Priority to JP52002229A priority Critical patent/JPS5931987B2/en
Publication of JPS5387181A publication Critical patent/JPS5387181A/en
Publication of JPS5931987B2 publication Critical patent/JPS5931987B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To prevent latch-up by providing an N<+> connection layer on the NMOSFED SIDE with a PMOSFET and a P<+> connection layer on the PMOSFET side with an NMOSFET.
JP52002229A 1977-01-11 1977-01-11 Complementary MOS transistor Expired JPS5931987B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52002229A JPS5931987B2 (en) 1977-01-11 1977-01-11 Complementary MOS transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52002229A JPS5931987B2 (en) 1977-01-11 1977-01-11 Complementary MOS transistor

Publications (2)

Publication Number Publication Date
JPS5387181A true JPS5387181A (en) 1978-08-01
JPS5931987B2 JPS5931987B2 (en) 1984-08-06

Family

ID=11523516

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52002229A Expired JPS5931987B2 (en) 1977-01-11 1977-01-11 Complementary MOS transistor

Country Status (1)

Country Link
JP (1) JPS5931987B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59198749A (en) * 1983-04-25 1984-11-10 Mitsubishi Electric Corp Complementary type field effect transistor
JPS6017948A (en) * 1983-07-11 1985-01-29 Mitsubishi Electric Corp Complementary mos integrated circuit device
JPS61164254A (en) * 1985-01-17 1986-07-24 Sanyo Electric Co Ltd Cmoc semiconductor device
JPS61164252A (en) * 1985-01-17 1986-07-24 Sanyo Electric Co Ltd Cmos semiconductor device
JPS61164253A (en) * 1985-01-17 1986-07-24 Sanyo Electric Co Ltd Cmos semiconductor device
JPS61188962A (en) * 1985-02-18 1986-08-22 Sanyo Electric Co Ltd Cmos semiconductor device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59198749A (en) * 1983-04-25 1984-11-10 Mitsubishi Electric Corp Complementary type field effect transistor
JPS6017948A (en) * 1983-07-11 1985-01-29 Mitsubishi Electric Corp Complementary mos integrated circuit device
JPH0526345B2 (en) * 1983-07-11 1993-04-15 Mitsubishi Electric Corp
JPS61164254A (en) * 1985-01-17 1986-07-24 Sanyo Electric Co Ltd Cmoc semiconductor device
JPS61164252A (en) * 1985-01-17 1986-07-24 Sanyo Electric Co Ltd Cmos semiconductor device
JPS61164253A (en) * 1985-01-17 1986-07-24 Sanyo Electric Co Ltd Cmos semiconductor device
JPS61188962A (en) * 1985-02-18 1986-08-22 Sanyo Electric Co Ltd Cmos semiconductor device
JPH039628B2 (en) * 1985-02-18 1991-02-08 Sanyo Electric Co

Also Published As

Publication number Publication date
JPS5931987B2 (en) 1984-08-06

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