JPS53100780A - Complementary type mos transistor - Google Patents

Complementary type mos transistor

Info

Publication number
JPS53100780A
JPS53100780A JP1762477A JP1762477A JPS53100780A JP S53100780 A JPS53100780 A JP S53100780A JP 1762477 A JP1762477 A JP 1762477A JP 1762477 A JP1762477 A JP 1762477A JP S53100780 A JPS53100780 A JP S53100780A
Authority
JP
Japan
Prior art keywords
mos transistor
type mos
complementary type
complementary
cmosfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1762477A
Other languages
Japanese (ja)
Other versions
JPS5819137B2 (en
Inventor
Toshio Matsuoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Original Assignee
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Sanyo Electric Co Ltd, Sanyo Electric Co Ltd filed Critical Tokyo Sanyo Electric Co Ltd
Priority to JP52017624A priority Critical patent/JPS5819137B2/en
Publication of JPS53100780A publication Critical patent/JPS53100780A/en
Publication of JPS5819137B2 publication Critical patent/JPS5819137B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To prevent latch-up phenomena effectively by externally connecting the P<+> source in the P channel FET in the N epitaxial layer on a substrate to N<+> connection layer in a CMOSFET.
JP52017624A 1977-02-15 1977-02-15 Complementary MOS transistor Expired JPS5819137B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52017624A JPS5819137B2 (en) 1977-02-15 1977-02-15 Complementary MOS transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52017624A JPS5819137B2 (en) 1977-02-15 1977-02-15 Complementary MOS transistor

Publications (2)

Publication Number Publication Date
JPS53100780A true JPS53100780A (en) 1978-09-02
JPS5819137B2 JPS5819137B2 (en) 1983-04-16

Family

ID=11949012

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52017624A Expired JPS5819137B2 (en) 1977-02-15 1977-02-15 Complementary MOS transistor

Country Status (1)

Country Link
JP (1) JPS5819137B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5737878A (en) * 1980-08-19 1982-03-02 Toshiba Corp Semiconductor integrated circuit
EP0138162A2 (en) * 1983-10-14 1985-04-24 International Business Machines Corporation CMOS structure

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60134934U (en) * 1984-02-20 1985-09-07 トキコ株式会社 disc brake
JPS6181025U (en) * 1984-10-31 1986-05-29
JPS61112131U (en) * 1984-12-26 1986-07-16

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS501676A (en) * 1973-05-07 1975-01-09
JPS5011794A (en) * 1973-06-04 1975-02-06
JPS5028795A (en) * 1973-07-13 1975-03-24

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS501676A (en) * 1973-05-07 1975-01-09
JPS5011794A (en) * 1973-06-04 1975-02-06
JPS5028795A (en) * 1973-07-13 1975-03-24

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5737878A (en) * 1980-08-19 1982-03-02 Toshiba Corp Semiconductor integrated circuit
JPS6318866B2 (en) * 1980-08-19 1988-04-20 Tokyo Shibaura Electric Co
EP0138162A2 (en) * 1983-10-14 1985-04-24 International Business Machines Corporation CMOS structure

Also Published As

Publication number Publication date
JPS5819137B2 (en) 1983-04-16

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