JPH0332234B2 - - Google Patents
Info
- Publication number
- JPH0332234B2 JPH0332234B2 JP55041125A JP4112580A JPH0332234B2 JP H0332234 B2 JPH0332234 B2 JP H0332234B2 JP 55041125 A JP55041125 A JP 55041125A JP 4112580 A JP4112580 A JP 4112580A JP H0332234 B2 JPH0332234 B2 JP H0332234B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- drain
- source
- gate
- drain region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 153
- 239000000758 substrate Substances 0.000 claims description 102
- 230000005669 field effect Effects 0.000 claims description 99
- 230000005684 electric field Effects 0.000 claims description 36
- 239000012535 impurity Substances 0.000 claims description 33
- 238000009826 distribution Methods 0.000 claims description 11
- 230000000694 effects Effects 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 96
- 230000015556 catabolic process Effects 0.000 description 66
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 53
- 229920005591 polysilicon Polymers 0.000 description 53
- 239000004020 conductor Substances 0.000 description 49
- 235000012239 silicon dioxide Nutrition 0.000 description 47
- 239000000377 silicon dioxide Substances 0.000 description 47
- 230000002441 reversible effect Effects 0.000 description 38
- 238000004519 manufacturing process Methods 0.000 description 23
- 229920002120 photoresistant polymer Polymers 0.000 description 22
- 238000000034 method Methods 0.000 description 21
- 125000004429 atom Chemical group 0.000 description 20
- 229910052751 metal Inorganic materials 0.000 description 20
- 239000002184 metal Substances 0.000 description 20
- 238000005468 ion implantation Methods 0.000 description 17
- 238000002955 isolation Methods 0.000 description 13
- 229910052698 phosphorus Inorganic materials 0.000 description 13
- 239000011574 phosphorus Substances 0.000 description 13
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 12
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 238000009792 diffusion process Methods 0.000 description 11
- 150000002500 ions Chemical class 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- 238000002161 passivation Methods 0.000 description 10
- 229910052796 boron Inorganic materials 0.000 description 9
- 238000000151 deposition Methods 0.000 description 9
- 239000000243 solution Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 238000001465 metallisation Methods 0.000 description 8
- 230000008901 benefit Effects 0.000 description 7
- 230000008859 change Effects 0.000 description 7
- 230000008021 deposition Effects 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 239000011159 matrix material Substances 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 238000010561 standard procedure Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 239000007943 implant Substances 0.000 description 4
- -1 phosphorous ions Chemical class 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- JRBRVDCKNXZZGH-UHFFFAOYSA-N alumane;copper Chemical compound [AlH3].[Cu] JRBRVDCKNXZZGH-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 230000037230 mobility Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 125000004437 phosphorous atom Chemical group 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 1
- 241000473391 Archosargus rhomboidalis Species 0.000 description 1
- 101150068246 V-MOS gene Proteins 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000002146 bilateral effect Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007728 cost analysis Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000013178 mathematical model Methods 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 239000005360 phosphosilicate glass Substances 0.000 description 1
- 229910021339 platinum silicide Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/404—Multiple field plate structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/765—Making of isolation regions between components by field effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7836—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with a significant overlap between the lightly doped extension and the gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Junction Field-Effect Transistors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
- Local Oxidation Of Silicon (AREA)
- Element Separation (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US2484079A | 1979-03-28 | 1979-03-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55132054A JPS55132054A (en) | 1980-10-14 |
| JPH0332234B2 true JPH0332234B2 (fr) | 1991-05-10 |
Family
ID=21822678
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4112580A Granted JPS55132054A (en) | 1979-03-28 | 1980-03-28 | Semiconductor device and method of fabricating same |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS55132054A (fr) |
| CA (1) | CA1142271A (fr) |
| DE (1) | DE3011778A1 (fr) |
| FR (1) | FR2452789A1 (fr) |
| GB (1) | GB2045525A (fr) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4429237A (en) * | 1981-03-20 | 1984-01-31 | International Business Machines Corp. | High voltage on chip FET driver |
| JPS57204172A (en) * | 1981-06-08 | 1982-12-14 | Ibm | Field effect transistor |
| EP0087155B1 (fr) * | 1982-02-22 | 1991-05-29 | Kabushiki Kaisha Toshiba | Moyens pour éviter le claquage d'une couche d'isolation dans un dispositif semi-conducteur |
| JPS5984572A (ja) * | 1982-11-08 | 1984-05-16 | Nec Corp | 半導体装置 |
| US5087591A (en) * | 1985-01-22 | 1992-02-11 | Texas Instruments Incorporated | Contact etch process |
| US4734752A (en) * | 1985-09-27 | 1988-03-29 | Advanced Micro Devices, Inc. | Electrostatic discharge protection device for CMOS integrated circuit outputs |
| EP0242540A1 (fr) * | 1986-04-21 | 1987-10-28 | International Business Machines Corporation | Procédé et structure pour réduire la résistance dans des circuits intégrés |
| JPS63104466A (ja) * | 1986-10-22 | 1988-05-09 | Mitsubishi Electric Corp | Ｍｏｓ型ダイナミツクｒａｍ |
| US5047820A (en) * | 1988-09-14 | 1991-09-10 | Micrel, Inc. | Semi self-aligned high voltage P channel FET |
| US4885627A (en) * | 1988-10-18 | 1989-12-05 | International Business Machines Corporation | Method and structure for reducing resistance in integrated circuits |
| JP2720624B2 (ja) * | 1991-04-26 | 1998-03-04 | 日本電気株式会社 | Ｍｏｓ集積回路 |
| JP2690244B2 (ja) * | 1992-08-20 | 1997-12-10 | 松下電子工業株式会社 | Ｍｉｓ型高耐圧トランジスタおよびその製造方法 |
| US6552389B2 (en) | 2000-12-14 | 2003-04-22 | Kabushiki Kaisha Toshiba | Offset-gate-type semiconductor device |
| JP2007214398A (ja) * | 2006-02-10 | 2007-08-23 | Nec Corp | 半導体集積回路 |
| JP2009212110A (ja) * | 2008-02-29 | 2009-09-17 | Renesas Technology Corp | トランジスタおよびその製造方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50114182A (fr) * | 1974-02-15 | 1975-09-06 |
-
1980
- 1980-03-07 CA CA000347291A patent/CA1142271A/fr not_active Expired
- 1980-03-26 GB GB8010180A patent/GB2045525A/en not_active Withdrawn
- 1980-03-27 DE DE19803011778 patent/DE3011778A1/de not_active Withdrawn
- 1980-03-28 FR FR8007109A patent/FR2452789A1/fr not_active Withdrawn
- 1980-03-28 JP JP4112580A patent/JPS55132054A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50114182A (fr) * | 1974-02-15 | 1975-09-06 |
Also Published As
| Publication number | Publication date |
|---|---|
| DE3011778A1 (de) | 1980-10-09 |
| JPS55132054A (en) | 1980-10-14 |
| GB2045525A (en) | 1980-10-29 |
| FR2452789A1 (fr) | 1980-10-24 |
| CA1142271A (fr) | 1983-03-01 |
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