CA1142271A - Semiconducteur a effet de champ - Google Patents
Semiconducteur a effet de champInfo
- Publication number
- CA1142271A CA1142271A CA000347291A CA347291A CA1142271A CA 1142271 A CA1142271 A CA 1142271A CA 000347291 A CA000347291 A CA 000347291A CA 347291 A CA347291 A CA 347291A CA 1142271 A CA1142271 A CA 1142271A
- Authority
- CA
- Canada
- Prior art keywords
- region
- major surface
- surface portion
- portions
- field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005669 field effect Effects 0.000 title claims abstract description 189
- 239000004065 semiconductor Substances 0.000 title claims abstract description 179
- 239000002019 doping agent Substances 0.000 claims abstract description 50
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 239000000463 material Substances 0.000 claims description 174
- 230000015556 catabolic process Effects 0.000 claims description 69
- 238000000034 method Methods 0.000 claims description 54
- 230000002441 reversible effect Effects 0.000 claims description 39
- 238000005468 ion implantation Methods 0.000 claims description 14
- 238000009826 distribution Methods 0.000 claims description 12
- 239000011159 matrix material Substances 0.000 claims description 12
- 150000002500 ions Chemical class 0.000 claims description 9
- 239000002131 composite material Substances 0.000 claims description 7
- QHGVXILFMXYDRS-UHFFFAOYSA-N pyraclofos Chemical compound C1=C(OP(=O)(OCC)SCCC)C=NN1C1=CC=C(Cl)C=C1 QHGVXILFMXYDRS-UHFFFAOYSA-N 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 93
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 56
- 229920005591 polysilicon Polymers 0.000 description 55
- 239000004020 conductor Substances 0.000 description 51
- 235000012239 silicon dioxide Nutrition 0.000 description 46
- 239000000377 silicon dioxide Substances 0.000 description 45
- 229960001866 silicon dioxide Drugs 0.000 description 45
- 230000008569 process Effects 0.000 description 34
- 230000005684 electric field Effects 0.000 description 24
- 229920002120 photoresistant polymer Polymers 0.000 description 24
- 125000004429 atom Chemical group 0.000 description 20
- 238000004519 manufacturing process Methods 0.000 description 19
- 229910052751 metal Inorganic materials 0.000 description 17
- 239000002184 metal Substances 0.000 description 17
- 230000001965 increasing effect Effects 0.000 description 15
- 229910052698 phosphorus Inorganic materials 0.000 description 14
- 235000014786 phosphorus Nutrition 0.000 description 14
- 239000011574 phosphorus Substances 0.000 description 14
- 238000005530 etching Methods 0.000 description 13
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 12
- 238000013461 design Methods 0.000 description 11
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052796 boron Inorganic materials 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 10
- 238000002513 implantation Methods 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 238000000151 deposition Methods 0.000 description 9
- 239000000243 solution Substances 0.000 description 8
- 230000008859 change Effects 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 230000008901 benefit Effects 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 230000006872 improvement Effects 0.000 description 5
- -1 phosphorus ions Chemical class 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 239000007943 implant Substances 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- JRBRVDCKNXZZGH-UHFFFAOYSA-N alumane;copper Chemical compound [AlH3].[Cu] JRBRVDCKNXZZGH-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 3
- PBAYDYUZOSNJGU-UHFFFAOYSA-N chelidonic acid Natural products OC(=O)C1=CC(=O)C=C(C(O)=O)O1 PBAYDYUZOSNJGU-UHFFFAOYSA-N 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 125000004437 phosphorous atom Chemical group 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000005234 chemical deposition Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 235000011007 phosphoric acid Nutrition 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 1
- SYQQWGGBOQFINV-FBWHQHKGSA-N 4-[2-[(2s,8s,9s,10r,13r,14s,17r)-10,13-dimethyl-17-[(2r)-6-methylheptan-2-yl]-3-oxo-1,2,6,7,8,9,11,12,14,15,16,17-dodecahydrocyclopenta[a]phenanthren-2-yl]ethoxy]-4-oxobutanoic acid Chemical compound C1CC2=CC(=O)[C@H](CCOC(=O)CCC(O)=O)C[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2 SYQQWGGBOQFINV-FBWHQHKGSA-N 0.000 description 1
- ODPOAESBSUKMHD-UHFFFAOYSA-L 6,7-dihydrodipyrido[1,2-b:1',2'-e]pyrazine-5,8-diium;dibromide Chemical compound [Br-].[Br-].C1=CC=[N+]2CC[N+]3=CC=CC=C3C2=C1 ODPOAESBSUKMHD-UHFFFAOYSA-L 0.000 description 1
- 101150071146 COX2 gene Proteins 0.000 description 1
- 101100114534 Caenorhabditis elegans ctc-2 gene Proteins 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- 239000005630 Diquat Substances 0.000 description 1
- 235000012571 Ficus glomerata Nutrition 0.000 description 1
- 240000000365 Ficus racemosa Species 0.000 description 1
- 101150000187 PTGS2 gene Proteins 0.000 description 1
- 235000015125 Sterculia urens Nutrition 0.000 description 1
- 101150068246 V-MOS gene Proteins 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000013178 mathematical model Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- KRTSDMXIXPKRQR-AATRIKPKSA-N monocrotophos Chemical compound CNC(=O)\C=C(/C)OP(=O)(OC)OC KRTSDMXIXPKRQR-AATRIKPKSA-N 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 239000005360 phosphosilicate glass Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910021339 platinum silicide Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000012421 spiking Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000001131 transforming effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/404—Multiple field plate structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/765—Making of isolation regions between components by field effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7836—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with a significant overlap between the lightly doped extension and the gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA000405052A CA1151774A (fr) | 1979-03-28 | 1982-06-11 | Semiconducteur a effet de champ |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US2484079A | 1979-03-28 | 1979-03-28 | |
| US024,840 | 1979-03-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1142271A true CA1142271A (fr) | 1983-03-01 |
Family
ID=21822678
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000347291A Expired CA1142271A (fr) | 1979-03-28 | 1980-03-07 | Semiconducteur a effet de champ |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS55132054A (fr) |
| CA (1) | CA1142271A (fr) |
| DE (1) | DE3011778A1 (fr) |
| FR (1) | FR2452789A1 (fr) |
| GB (1) | GB2045525A (fr) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4429237A (en) * | 1981-03-20 | 1984-01-31 | International Business Machines Corp. | High voltage on chip FET driver |
| JPS57204172A (en) * | 1981-06-08 | 1982-12-14 | Ibm | Field effect transistor |
| EP0087155B1 (fr) * | 1982-02-22 | 1991-05-29 | Kabushiki Kaisha Toshiba | Moyens pour éviter le claquage d'une couche d'isolation dans un dispositif semi-conducteur |
| JPS5984572A (ja) * | 1982-11-08 | 1984-05-16 | Nec Corp | 半導体装置 |
| US5087591A (en) * | 1985-01-22 | 1992-02-11 | Texas Instruments Incorporated | Contact etch process |
| US4734752A (en) * | 1985-09-27 | 1988-03-29 | Advanced Micro Devices, Inc. | Electrostatic discharge protection device for CMOS integrated circuit outputs |
| EP0242540A1 (fr) * | 1986-04-21 | 1987-10-28 | International Business Machines Corporation | Procédé et structure pour réduire la résistance dans des circuits intégrés |
| JPS63104466A (ja) * | 1986-10-22 | 1988-05-09 | Mitsubishi Electric Corp | Ｍｏｓ型ダイナミツクｒａｍ |
| US5047820A (en) * | 1988-09-14 | 1991-09-10 | Micrel, Inc. | Semi self-aligned high voltage P channel FET |
| US4885627A (en) * | 1988-10-18 | 1989-12-05 | International Business Machines Corporation | Method and structure for reducing resistance in integrated circuits |
| JP2720624B2 (ja) * | 1991-04-26 | 1998-03-04 | 日本電気株式会社 | Ｍｏｓ集積回路 |
| JP2690244B2 (ja) * | 1992-08-20 | 1997-12-10 | 松下電子工業株式会社 | Ｍｉｓ型高耐圧トランジスタおよびその製造方法 |
| US6552389B2 (en) | 2000-12-14 | 2003-04-22 | Kabushiki Kaisha Toshiba | Offset-gate-type semiconductor device |
| JP2007214398A (ja) * | 2006-02-10 | 2007-08-23 | Nec Corp | 半導体集積回路 |
| JP2009212110A (ja) * | 2008-02-29 | 2009-09-17 | Renesas Technology Corp | トランジスタおよびその製造方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5435757B2 (fr) * | 1974-02-15 | 1979-11-05 |
-
1980
- 1980-03-07 CA CA000347291A patent/CA1142271A/fr not_active Expired
- 1980-03-26 GB GB8010180A patent/GB2045525A/en not_active Withdrawn
- 1980-03-27 DE DE19803011778 patent/DE3011778A1/de not_active Withdrawn
- 1980-03-28 FR FR8007109A patent/FR2452789A1/fr not_active Withdrawn
- 1980-03-28 JP JP4112580A patent/JPS55132054A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| DE3011778A1 (de) | 1980-10-09 |
| JPH0332234B2 (fr) | 1991-05-10 |
| FR2452789A1 (fr) | 1980-10-24 |
| JPS55132054A (en) | 1980-10-14 |
| GB2045525A (en) | 1980-10-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |