TW358225B - Manufacturing method of semiconductor gate electrode - Google Patents

Manufacturing method of semiconductor gate electrode

Info

Publication number
TW358225B
TW358225B TW086104202A TW86104202A TW358225B TW 358225 B TW358225 B TW 358225B TW 086104202 A TW086104202 A TW 086104202A TW 86104202 A TW86104202 A TW 86104202A TW 358225 B TW358225 B TW 358225B
Authority
TW
Taiwan
Prior art keywords
crystalline layer
forming
manufacturing
gate electrode
silicon substrate
Prior art date
Application number
TW086104202A
Other languages
Chinese (zh)
Inventor
Jen-Hua Yu
Jia-Shiung Tsai
Original Assignee
Taiwan Semiconductor Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg Co Ltd filed Critical Taiwan Semiconductor Mfg Co Ltd
Priority to TW086104202A priority Critical patent/TW358225B/en
Application granted granted Critical
Publication of TW358225B publication Critical patent/TW358225B/en

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

A manufacturing method of semiconductor gate electrode, including at least: (a) provision of a silicon substrate; (b) forming a gate oxide layer on said silicon substrate; (c) forming a multi-crystalline layer on the silicon substrate; (d) defining the multi-crystalline layer, for forming a thick multi-crystalline layer part and a thin multi-crystalline layer part, where the thick multi-crystalline layer part is in the form of a gate; (e) implanting the lightly doped drain, for forming of a lightly doped area; and (f) carrying out oxidization, of the lateral wall of the thick multi-crystalline layer and the thin multi-crystalline layer part, for forming an oxidized lateral wall layer, and with tempering to the light doped area.
TW086104202A 1997-04-01 1997-04-01 Manufacturing method of semiconductor gate electrode TW358225B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW086104202A TW358225B (en) 1997-04-01 1997-04-01 Manufacturing method of semiconductor gate electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW086104202A TW358225B (en) 1997-04-01 1997-04-01 Manufacturing method of semiconductor gate electrode

Publications (1)

Publication Number Publication Date
TW358225B true TW358225B (en) 1999-05-11

Family

ID=57940500

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086104202A TW358225B (en) 1997-04-01 1997-04-01 Manufacturing method of semiconductor gate electrode

Country Status (1)

Country Link
TW (1) TW358225B (en)

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