TW328624B - The manufacturing method for MOS with gate-side air-gap structure - Google Patents
The manufacturing method for MOS with gate-side air-gap structureInfo
- Publication number
- TW328624B TW328624B TW086110021A TW86110021A TW328624B TW 328624 B TW328624 B TW 328624B TW 086110021 A TW086110021 A TW 086110021A TW 86110021 A TW86110021 A TW 86110021A TW 328624 B TW328624 B TW 328624B
- Authority
- TW
- Taiwan
- Prior art keywords
- spacer
- semiconductor substrate
- polysilicon gate
- substrate
- amorphous silicon
- Prior art date
Links
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
A manufacturing method for MOS with gate-side air-gap structure includes the following steps: - Define to form polysilicon gate structure on semiconductor substrate; - Proceed 1st ion implantation on substrate to form lightly doped source and drain in substrate at both sides of polysilicon gate structure; - Form nitride spacer at sidewall of polysilicon gate structure; - Form amorphous silicon spacer at sidewall of nitride spacer; - Proceed 2nd ion implantation to semiconductor substrate, polysilicon gate and amorphous silicon spacer; - Proceed slightly annealing on substrate to form heavily doped source and drain on semiconductor substrate; - Remove nitride spacer; - Use wet oxidation process for oxidation amorphous silicon spacer to form doped oxide spacer with air-gap, and form extended doping region in semiconductor substrate under the doped oxide spacer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW086110021A TW328624B (en) | 1997-07-15 | 1997-07-15 | The manufacturing method for MOS with gate-side air-gap structure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW086110021A TW328624B (en) | 1997-07-15 | 1997-07-15 | The manufacturing method for MOS with gate-side air-gap structure |
Publications (1)
Publication Number | Publication Date |
---|---|
TW328624B true TW328624B (en) | 1998-03-21 |
Family
ID=58262441
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086110021A TW328624B (en) | 1997-07-15 | 1997-07-15 | The manufacturing method for MOS with gate-side air-gap structure |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW328624B (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11987876B2 (en) | 2018-03-19 | 2024-05-21 | Lam Research Corporation | Chamfer-less via integration scheme |
US12051589B2 (en) | 2016-06-28 | 2024-07-30 | Lam Research Corporation | Tin oxide thin film spacers in semiconductor device manufacturing |
US12094711B2 (en) | 2017-02-17 | 2024-09-17 | Lam Research Corporation | Tin oxide films in semiconductor device manufacturing |
-
1997
- 1997-07-15 TW TW086110021A patent/TW328624B/en not_active IP Right Cessation
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US12051589B2 (en) | 2016-06-28 | 2024-07-30 | Lam Research Corporation | Tin oxide thin film spacers in semiconductor device manufacturing |
US12094711B2 (en) | 2017-02-17 | 2024-09-17 | Lam Research Corporation | Tin oxide films in semiconductor device manufacturing |
US11987876B2 (en) | 2018-03-19 | 2024-05-21 | Lam Research Corporation | Chamfer-less via integration scheme |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |