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Application filed by United Microelectronics CorpfiledCriticalUnited Microelectronics Corp
Priority to TW83101613ApriorityCriticalpatent/TW280012B/en
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Publication of TW280012BpublicationCriticalpatent/TW280012B/en
Insulated Gate Type Field-Effect Transistor
(AREA)
Abstract
A making method of device with lightly doped drain, that is applicable to semiconductor substrate with formed gate on active region, and the above gate with lateral side, comprises the features of: forming sidewall spacer on lateral side of the above gate, and the above sidewall spacer lower than the above gate; implanting dopant to form highly doped region and lightly doped region under the above sidewall spacer to form drain and source electrode.
TW83101613A1994-02-251994-02-25Making method of device with lightly doped drain
TW280012B
(en)