TW288199B - Process of fabricating lightly doped drain with inverse-T-shaped gate - Google Patents

Abstract

A process of fabricating lightly doped drain with inverse-T-shaped gate comprises of the steps of: (1) forming one gate oxide on substrate; (2) forming at least two layers of stacked amorphous silicon on the gate oxide; (3) forming first insulator on top of the stacked amorphous silicon, in which the first insulator is formed by masking one photoresist; (4) forming lightly doped source/drain electrode with the photoresist as implantation mask; (5) removing partial stacked amorphous silicon where is not masked by the photoresist to make the bottom expose; (6) forming second insulator spacer on the stacked amorphous silicon sidewall; (7) forming heavily doped source/drain with first insulator and second insulator spacer as implantation mask; (8) removing the stacked amorphous silicon bottom and the gate oxide where is not masked by the spacer; (9) removing the first insulator and second insulator spacer; (10) forming third insulator spacer on the gate oxide and the stacked amorphous silicon sidewall; (11) forming metal silicide on the stacked amorphous silicon top and above partial heavily doped source/drain electrode.