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Application filed by United Microelectronics CorpfiledCriticalUnited Microelectronics Corp
Priority to TW84106406ApriorityCriticalpatent/TW263616B/en
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Insulated Gate Type Field-Effect Transistor
(AREA)
Abstract
A metal oxide semiconductor device comprises: one semiconductor substrate; isolating structure installed on the substrate for defining active region between the isolating structures; one gate stacked layer with sidewall, installed on the substrae in the active region; one pair of lightly doped source/drain region formed in the substrae under two sides of the gate stacked layer; sidewall spacer formed on the sidewall of the gate stacked layer, and with trench-shape position with respect to the isolating structures; one pair of heavily source/drain region installed in the trench, and contacting with the lightly source/drain region.
TW84106406A1995-06-211995-06-21Metal oxide semiconductor device and process thereof
TW263616B
(en)
Metal insulative semiconductor field effect transistor having a planar member and electrodes on its upper surface and method for manufacturing the same