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Priority to TW83100747ApriorityCriticalpatent/TW230829B/en
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An insulating method and its structure for field bi-oxide side-wall includes: 1. depositing one thin thickness of oxide and one Si3N4 layer on siliconlayer; 2. proceeding shallow trench etch on Si3N4 layer, oxide and silicon material; 3. proceeding CVD and etch back, forming oxide side-wall with narrow width on the two side-walls of shallow trench; 4. removing Si3N4 layer; 5. depositing polysilicon and proceeding ion doping; 6. etching polysilicon to leave the inside polysilicon material of shallowtrench; 7. removing outside oxide and etching the oxide side-wall; 8. regrowing thin thickness of gate oxide; By forming the doped polysilicon in the center of shallow trench, which isconnected with the bottom silicon layer, and forming two thin thickness ofoxide side-wall around the doped polysilicon.
TW83100747A1994-01-291994-01-29Insulating method and its structure for field bi-oxide side-wall
TW230829B
(en)