TW245815B - Process for self-aligned metal silicide - Google Patents

Abstract

A process for self-aligned metal silicide, which is applicable to substrate with filed oxide on multiple specific positions, between which there is one active region, includes: 1. on the field oxide and active region, in sequence forming one oxide, one polysilicon layer, one TEOS and one metal layer; 2. thermal annealing to make the metal layer agglomerate into island structure, and multiple cracks and pits formed in the TEOS; 3. removing the metal island structure; 4. with the TEOS as mask, forming multiple trenches in the polysilicon layer; 5. removing the TEOS; 6. forming one MOS transistor on the active region, one gate electrode on the polysilicon layer, one gate oxide on the oxide layer, sidewall spacer on the side of gate electrode and source/drain area between the gate electrode and oxide; 7. filling the trench of gate electrode with polysilicon; 8. forming one metal layer on the MOS transistor; 9. thermal reactivating to form self-aligned metal silicide.