TW428235B - Fabricating method of P-type metal oxide semiconductor transistor - Google Patents

Fabricating method of P-type metal oxide semiconductor transistor

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Publication number
TW428235B
TW428235B TW88114690A TW88114690A TW428235B TW 428235 B TW428235 B TW 428235B TW 88114690 A TW88114690 A TW 88114690A TW 88114690 A TW88114690 A TW 88114690A TW 428235 B TW428235 B TW 428235B
Authority
TW
Taiwan
Prior art keywords
gate
substrate
oxide semiconductor
metal oxide
type metal
Prior art date
Application number
TW88114690A
Other languages
Chinese (zh)
Inventor
Jian-Ting Lin
Jen-Chiou Shiu
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW88114690A priority Critical patent/TW428235B/en
Application granted granted Critical
Publication of TW428235B publication Critical patent/TW428235B/en

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Abstract

This invention is about the fabricating method of P-type metal oxide semiconductor transistor and includes the followings: gate is formed on substrate and is followed by the formation of spacer on sidewall of gate; source/drain are formed in the substrate, which is on both sides of gate, and metal silicide layer is formed on both upper surface of gate and substrate surface; after that, spacer is removed and the extending doped-region of source/drain is formed on the substrate in between gate and source/drain. Then, the puncture-resist doped region is formed in the substrate on the inter periphery of source/drain.
TW88114690A 1999-08-27 1999-08-27 Fabricating method of P-type metal oxide semiconductor transistor TW428235B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW88114690A TW428235B (en) 1999-08-27 1999-08-27 Fabricating method of P-type metal oxide semiconductor transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW88114690A TW428235B (en) 1999-08-27 1999-08-27 Fabricating method of P-type metal oxide semiconductor transistor

Publications (1)

Publication Number Publication Date
TW428235B true TW428235B (en) 2001-04-01

Family

ID=21642067

Family Applications (1)

Application Number Title Priority Date Filing Date
TW88114690A TW428235B (en) 1999-08-27 1999-08-27 Fabricating method of P-type metal oxide semiconductor transistor

Country Status (1)

Country Link
TW (1) TW428235B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011125036A1 (en) 2010-04-06 2011-10-13 Faculdade De Ciências E Tecnologia Da Universidade Nova De Lisboa P-type oxide alloys based on copper oxides, tin oxides, tin-copper alloy oxides and metal alloy thereof, and nickel oxide, with embedded metals thereof, fabrication process and use thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011125036A1 (en) 2010-04-06 2011-10-13 Faculdade De Ciências E Tecnologia Da Universidade Nova De Lisboa P-type oxide alloys based on copper oxides, tin oxides, tin-copper alloy oxides and metal alloy thereof, and nickel oxide, with embedded metals thereof, fabrication process and use thereof

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