TW428235B - Fabricating method of P-type metal oxide semiconductor transistor - Google Patents
Fabricating method of P-type metal oxide semiconductor transistorInfo
- Publication number
- TW428235B TW428235B TW88114690A TW88114690A TW428235B TW 428235 B TW428235 B TW 428235B TW 88114690 A TW88114690 A TW 88114690A TW 88114690 A TW88114690 A TW 88114690A TW 428235 B TW428235 B TW 428235B
- Authority
- TW
- Taiwan
- Prior art keywords
- gate
- substrate
- oxide semiconductor
- metal oxide
- type metal
- Prior art date
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
This invention is about the fabricating method of P-type metal oxide semiconductor transistor and includes the followings: gate is formed on substrate and is followed by the formation of spacer on sidewall of gate; source/drain are formed in the substrate, which is on both sides of gate, and metal silicide layer is formed on both upper surface of gate and substrate surface; after that, spacer is removed and the extending doped-region of source/drain is formed on the substrate in between gate and source/drain. Then, the puncture-resist doped region is formed in the substrate on the inter periphery of source/drain.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW88114690A TW428235B (en) | 1999-08-27 | 1999-08-27 | Fabricating method of P-type metal oxide semiconductor transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW88114690A TW428235B (en) | 1999-08-27 | 1999-08-27 | Fabricating method of P-type metal oxide semiconductor transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
TW428235B true TW428235B (en) | 2001-04-01 |
Family
ID=21642067
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW88114690A TW428235B (en) | 1999-08-27 | 1999-08-27 | Fabricating method of P-type metal oxide semiconductor transistor |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW428235B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011125036A1 (en) | 2010-04-06 | 2011-10-13 | Faculdade De Ciências E Tecnologia Da Universidade Nova De Lisboa | P-type oxide alloys based on copper oxides, tin oxides, tin-copper alloy oxides and metal alloy thereof, and nickel oxide, with embedded metals thereof, fabrication process and use thereof |
-
1999
- 1999-08-27 TW TW88114690A patent/TW428235B/en not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011125036A1 (en) | 2010-04-06 | 2011-10-13 | Faculdade De Ciências E Tecnologia Da Universidade Nova De Lisboa | P-type oxide alloys based on copper oxides, tin oxides, tin-copper alloy oxides and metal alloy thereof, and nickel oxide, with embedded metals thereof, fabrication process and use thereof |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW200739748A (en) | Silicide layers in contacts for high-k/metal gate transistors | |
KR100327347B1 (en) | Metal oxide semiconductor field effect transistor having reduced resistance between source and drain and fabricating method thereof | |
WO2005096387A3 (en) | Semiconductor device having a laterally modulated gate workfunction and method of fabrication | |
TW200625471A (en) | Semiconductor device employing an extension spacer and method of forming the same | |
TW200731509A (en) | Semiconductor device and manufacturing method thereof | |
TW200507051A (en) | Self-aligned inner gate recess channel transistor and method of forming the same | |
TW200635044A (en) | Quasi-planar and finfet-like transistors on bulk silicon | |
WO2007110507A3 (en) | Process for fabricating a field-effect transistor with self-aligned gates | |
EP0782182A3 (en) | MOS transistor and manufacturing method of the same | |
TW200703563A (en) | Method of forming a MOS device with an additional layer | |
WO2000075967A3 (en) | Method for fabrication of a low resistivity mosfet gate with thick metal silicide on polysilicon | |
US20100164021A1 (en) | Method of manufacturing semiconductor device | |
WO2005072377A3 (en) | Non-volatile dram and a method of making thereof | |
TW362289B (en) | Manufacturing method of metal oxide semiconductor field effect transistor | |
TW375771B (en) | Process for fabricating metal-silicide-containing semiconductor element | |
TW200620678A (en) | Manufacturing method of semiconductor device | |
TW428235B (en) | Fabricating method of P-type metal oxide semiconductor transistor | |
TW200723406A (en) | Method for fabricating trench metal oxide semiconductor field effect transistor | |
WO2003009404A3 (en) | Transistor and method for making a transistor on a sige/soi substrate | |
WO2005062944A3 (en) | Method of manufacturing self-aligned non-volatile memory device | |
JP2007288051A (en) | Semiconductor device, and manufacturing method thereof | |
TW428239B (en) | Fabricating method of metal gate | |
TWI256673B (en) | High voltage metal oxide semiconductor and fabricating method thereof | |
US7160778B2 (en) | Semiconductor device and method of manufacturing the same | |
TW428257B (en) | Fabricating method of landing pad |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GD4A | Issue of patent certificate for granted invention patent | ||
MK4A | Expiration of patent term of an invention patent |