TW428239B - Fabricating method of metal gate - Google Patents

Fabricating method of metal gate

Info

Publication number
TW428239B
TW428239B TW87108048A TW87108048A TW428239B TW 428239 B TW428239 B TW 428239B TW 87108048 A TW87108048 A TW 87108048A TW 87108048 A TW87108048 A TW 87108048A TW 428239 B TW428239 B TW 428239B
Authority
TW
Taiwan
Prior art keywords
layer
gate
opening
substrate
metal
Prior art date
Application number
TW87108048A
Other languages
Chinese (zh)
Inventor
Sheng-Shiung Yang
Chuan-Shi Liou
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW87108048A priority Critical patent/TW428239B/en
Application granted granted Critical
Publication of TW428239B publication Critical patent/TW428239B/en

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Abstract

This invention is about the fabricating method of metal gate and includes the followings: the metal oxide semiconductor (MOS) having a source/drain and a drain structures is formed on substrate and self-aligned metal silicide layer is formed on both source/drain and gate structures, in which gate structure is composed of a polysilicon layer and a spacer of the polysilicon sidewall; in addition, a sacrificial layer is formed in-between the sidewall of polysilicon layer and spacer as well as the polysilicon layer and substrate; an insulation layer is formed on substrate to cover the whole MOS transistor and a planarization process is performed until metal silicide layer is exposed; after that, metal silicide layer, polysilicon layer and sacrificial layer on the gate structure are removed to form an opening such that substrate surface is exposed at the bottom portion of the opening; then, gate oxide is formed on substrate surface in this opening and the formation of a metal gate on top of the gate oxide is made in the opening.
TW87108048A 1998-05-25 1998-05-25 Fabricating method of metal gate TW428239B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW87108048A TW428239B (en) 1998-05-25 1998-05-25 Fabricating method of metal gate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW87108048A TW428239B (en) 1998-05-25 1998-05-25 Fabricating method of metal gate

Publications (1)

Publication Number Publication Date
TW428239B true TW428239B (en) 2001-04-01

Family

ID=21630184

Family Applications (1)

Application Number Title Priority Date Filing Date
TW87108048A TW428239B (en) 1998-05-25 1998-05-25 Fabricating method of metal gate

Country Status (1)

Country Link
TW (1) TW428239B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI493603B (en) * 2011-02-23 2015-07-21 United Microelectronics Corp Method of manufacturing semiconductor device having metal gate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI493603B (en) * 2011-02-23 2015-07-21 United Microelectronics Corp Method of manufacturing semiconductor device having metal gate

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Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees