TW428239B - Fabricating method of metal gate - Google Patents
Fabricating method of metal gateInfo
- Publication number
- TW428239B TW428239B TW87108048A TW87108048A TW428239B TW 428239 B TW428239 B TW 428239B TW 87108048 A TW87108048 A TW 87108048A TW 87108048 A TW87108048 A TW 87108048A TW 428239 B TW428239 B TW 428239B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- gate
- opening
- substrate
- metal
- Prior art date
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
This invention is about the fabricating method of metal gate and includes the followings: the metal oxide semiconductor (MOS) having a source/drain and a drain structures is formed on substrate and self-aligned metal silicide layer is formed on both source/drain and gate structures, in which gate structure is composed of a polysilicon layer and a spacer of the polysilicon sidewall; in addition, a sacrificial layer is formed in-between the sidewall of polysilicon layer and spacer as well as the polysilicon layer and substrate; an insulation layer is formed on substrate to cover the whole MOS transistor and a planarization process is performed until metal silicide layer is exposed; after that, metal silicide layer, polysilicon layer and sacrificial layer on the gate structure are removed to form an opening such that substrate surface is exposed at the bottom portion of the opening; then, gate oxide is formed on substrate surface in this opening and the formation of a metal gate on top of the gate oxide is made in the opening.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW87108048A TW428239B (en) | 1998-05-25 | 1998-05-25 | Fabricating method of metal gate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW87108048A TW428239B (en) | 1998-05-25 | 1998-05-25 | Fabricating method of metal gate |
Publications (1)
Publication Number | Publication Date |
---|---|
TW428239B true TW428239B (en) | 2001-04-01 |
Family
ID=21630184
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW87108048A TW428239B (en) | 1998-05-25 | 1998-05-25 | Fabricating method of metal gate |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW428239B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI493603B (en) * | 2011-02-23 | 2015-07-21 | United Microelectronics Corp | Method of manufacturing semiconductor device having metal gate |
-
1998
- 1998-05-25 TW TW87108048A patent/TW428239B/en not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI493603B (en) * | 2011-02-23 | 2015-07-21 | United Microelectronics Corp | Method of manufacturing semiconductor device having metal gate |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20030040158A1 (en) | Semiconductor device and method of fabricating the same | |
EP1227514A3 (en) | Method for forming a gate dielectric with high-K and low-K regions | |
TW334590B (en) | Semiconductor device and its manufacture | |
EP0782182A3 (en) | MOS transistor and manufacturing method of the same | |
US5726081A (en) | Method of fabricating metal contact of ultra-large-scale integration metal-oxide semiconductor field effect transistor with silicon-on-insulator structure | |
US7468303B2 (en) | Semiconductor device and manufacturing method thereof | |
WO2000075967A3 (en) | Method for fabrication of a low resistivity mosfet gate with thick metal silicide on polysilicon | |
US6534405B1 (en) | Method of forming a MOSFET device featuring a dual salicide process | |
US20060160294A1 (en) | Soi device with body contact self-aligned to gate | |
WO2007072305A3 (en) | Source and drain formation in silicon on insulator device | |
US6509264B1 (en) | Method to form self-aligned silicide with reduced sheet resistance | |
TW375771B (en) | Process for fabricating metal-silicide-containing semiconductor element | |
CN101540286A (en) | Method for production of semiconductor device | |
US7569444B2 (en) | Transistor and method for manufacturing thereof | |
TW428239B (en) | Fabricating method of metal gate | |
TW564496B (en) | Semiconductor device and method of manufacturing the same | |
US6255183B1 (en) | Manufacture of a semiconductor device with a MOS transistor having an LDD structure using SiGe spacers | |
TW333675B (en) | The producing method for bottom electrode of comb-type capacitor of DRAM | |
WO2005062944A3 (en) | Method of manufacturing self-aligned non-volatile memory device | |
WO2003009404A3 (en) | Transistor and method for making a transistor on a sige/soi substrate | |
US7385261B2 (en) | Extended drain metal oxide semiconductor transistor and manufacturing method thereof | |
CN101140951A (en) | Integrated transistor device and corresponding manufacturing method | |
TW428235B (en) | Fabricating method of P-type metal oxide semiconductor transistor | |
WO2006103158A3 (en) | Integration scheme for fully silicided gate | |
JP2626532B2 (en) | Semiconductor device and manufacturing method thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GD4A | Issue of patent certificate for granted invention patent | ||
MM4A | Annulment or lapse of patent due to non-payment of fees |