TW429602B - Structure of high voltage device and the fabricating method - Google Patents
Structure of high voltage device and the fabricating methodInfo
- Publication number
- TW429602B TW429602B TW88122235A TW88122235A TW429602B TW 429602 B TW429602 B TW 429602B TW 88122235 A TW88122235 A TW 88122235A TW 88122235 A TW88122235 A TW 88122235A TW 429602 B TW429602 B TW 429602B
- Authority
- TW
- Taiwan
- Prior art keywords
- well region
- conduction type
- region
- trench isolation
- shallow trench
- Prior art date
Links
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
This invention is about a high voltage device structure. The structure includes the second conduction type silicon epitaxy layer that is located on the first conduction type substrate and has a recessed structure. The first well region of the second conduction type is located on the recess side of the silicon epitaxy layer. The second well region of the first conduction type is located on the other side of the recess of silicon epitaxy layer. The third well region of the second conduction type is located in the first well region. Shallow trench isolation is located in the second well region and the fourth well region of the second conduction type is located in the second well region that is under the shallow trench isolation. Gate is located in the recess on top of substrate and covers part of the first well region, the third well region and the shallow trench isolation. Source region of the first conduction type is located in the third well region of the gate side. Drain region of the first conduction type is located in the second well region of the shallow trench isolation that is not covered by gate. Doped region of the second conduction type is located in the silicon epitaxy layer and substrate under the source region.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW88122235A TW429602B (en) | 1999-12-17 | 1999-12-17 | Structure of high voltage device and the fabricating method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW88122235A TW429602B (en) | 1999-12-17 | 1999-12-17 | Structure of high voltage device and the fabricating method |
Publications (1)
Publication Number | Publication Date |
---|---|
TW429602B true TW429602B (en) | 2001-04-11 |
Family
ID=21643444
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW88122235A TW429602B (en) | 1999-12-17 | 1999-12-17 | Structure of high voltage device and the fabricating method |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW429602B (en) |
-
1999
- 1999-12-17 TW TW88122235A patent/TW429602B/en active
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