TW289163B - Lightly doped drain method and mask ROM device thereof - Google Patents

Lightly doped drain method and mask ROM device thereof

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Publication number
TW289163B
TW289163B TW85101242A TW85101242A TW289163B TW 289163 B TW289163 B TW 289163B TW 85101242 A TW85101242 A TW 85101242A TW 85101242 A TW85101242 A TW 85101242A TW 289163 B TW289163 B TW 289163B
Authority
TW
Taiwan
Prior art keywords
forming
control gate
substrate
mask
dosage
Prior art date
Application number
TW85101242A
Other languages
Chinese (zh)
Inventor
Ian-Long Chiou
Gwo-Jinn Shyu
Original Assignee
Taiwan Semiconductor Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg filed Critical Taiwan Semiconductor Mfg
Priority to TW85101242A priority Critical patent/TW289163B/en
Application granted granted Critical
Publication of TW289163B publication Critical patent/TW289163B/en

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Abstract

A method of fabricating ROM semiconductor device on one dopedsemiconductor substrate with field oxide, in which there is one gate oxide between field oxide on substrate surface, comprises the steps of: (1) forming one control gate on the gate oxide; (2) forming control gate electrode mask above the device, in which the mask has one punch-through via; (3) forming one lightly doped drain(LDD) mask above exposed control gate of the device; (4) through the mask via by ion implantation implanting dopant with first dosage so as to forming inverse LDD implanted doped area with first dosage degree in the substrate; (5) forming space near the control gate on the substrate; (6) through spacer and the control gate on exposed portion of self-aligned substrate by ion implantation implanting one dopant with second dosage level so as to supply one doped area with second dosage level which is different from the first's; (7) thereafter supplying one mask ROM device.
TW85101242A 1996-02-01 1996-02-01 Lightly doped drain method and mask ROM device thereof TW289163B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW85101242A TW289163B (en) 1996-02-01 1996-02-01 Lightly doped drain method and mask ROM device thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW85101242A TW289163B (en) 1996-02-01 1996-02-01 Lightly doped drain method and mask ROM device thereof

Publications (1)

Publication Number Publication Date
TW289163B true TW289163B (en) 1996-10-21

Family

ID=51398170

Family Applications (1)

Application Number Title Priority Date Filing Date
TW85101242A TW289163B (en) 1996-02-01 1996-02-01 Lightly doped drain method and mask ROM device thereof

Country Status (1)

Country Link
TW (1) TW289163B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6323091B1 (en) 1999-07-16 2001-11-27 Zilog, Inc. Method of forming semiconductor memory device with LDD

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6323091B1 (en) 1999-07-16 2001-11-27 Zilog, Inc. Method of forming semiconductor memory device with LDD

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