TW289163B - Lightly doped drain method and mask ROM device thereof - Google Patents
Lightly doped drain method and mask ROM device thereofInfo
- Publication number
- TW289163B TW289163B TW85101242A TW85101242A TW289163B TW 289163 B TW289163 B TW 289163B TW 85101242 A TW85101242 A TW 85101242A TW 85101242 A TW85101242 A TW 85101242A TW 289163 B TW289163 B TW 289163B
- Authority
- TW
- Taiwan
- Prior art keywords
- forming
- control gate
- substrate
- mask
- dosage
- Prior art date
Links
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- Semiconductor Memories (AREA)
Abstract
A method of fabricating ROM semiconductor device on one dopedsemiconductor substrate with field oxide, in which there is one gate oxide between field oxide on substrate surface, comprises the steps of: (1) forming one control gate on the gate oxide; (2) forming control gate electrode mask above the device, in which the mask has one punch-through via; (3) forming one lightly doped drain(LDD) mask above exposed control gate of the device; (4) through the mask via by ion implantation implanting dopant with first dosage so as to forming inverse LDD implanted doped area with first dosage degree in the substrate; (5) forming space near the control gate on the substrate; (6) through spacer and the control gate on exposed portion of self-aligned substrate by ion implantation implanting one dopant with second dosage level so as to supply one doped area with second dosage level which is different from the first's; (7) thereafter supplying one mask ROM device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW85101242A TW289163B (en) | 1996-02-01 | 1996-02-01 | Lightly doped drain method and mask ROM device thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW85101242A TW289163B (en) | 1996-02-01 | 1996-02-01 | Lightly doped drain method and mask ROM device thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
TW289163B true TW289163B (en) | 1996-10-21 |
Family
ID=51398170
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW85101242A TW289163B (en) | 1996-02-01 | 1996-02-01 | Lightly doped drain method and mask ROM device thereof |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW289163B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6323091B1 (en) | 1999-07-16 | 2001-11-27 | Zilog, Inc. | Method of forming semiconductor memory device with LDD |
-
1996
- 1996-02-01 TW TW85101242A patent/TW289163B/en not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6323091B1 (en) | 1999-07-16 | 2001-11-27 | Zilog, Inc. | Method of forming semiconductor memory device with LDD |
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