TW429437B - Method of producing transistor device using mask layer as the photomask of pocket ion implantation - Google Patents

Method of producing transistor device using mask layer as the photomask of pocket ion implantation

Info

Publication number
TW429437B
TW429437B TW88111072A TW88111072A TW429437B TW 429437 B TW429437 B TW 429437B TW 88111072 A TW88111072 A TW 88111072A TW 88111072 A TW88111072 A TW 88111072A TW 429437 B TW429437 B TW 429437B
Authority
TW
Taiwan
Prior art keywords
mask layer
mask
gate electrode
layer
ion implantation
Prior art date
Application number
TW88111072A
Other languages
Chinese (zh)
Inventor
Jiau-Ren Shr
Suei-Hung Chen
Jian-Shing Li
Jia-Hung Tang
Original Assignee
Taiwan Semiconductor Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg filed Critical Taiwan Semiconductor Mfg
Priority to TW88111072A priority Critical patent/TW429437B/en
Application granted granted Critical
Publication of TW429437B publication Critical patent/TW429437B/en

Links

Abstract

The present invention provides a method of producing a transistor device using a mask layer as the mask of a pocket ion implantation, which comprises: sequentially forming a conductive layer and a mask layer on the surface of a semiconductor substrate; defining a pattern of the mask layer and the conductive layer to form a gate electrode; using the mask layer as a mask to implant ions into a region in the semiconductor substrate below the gate electrode thereby forming a pocket ion implantation region; removing the mask layer and oxidizing the gate electrode; forming a lightly doped region on both sides below the gate electrode; forming an insulation sidewall layer on the sidewall of the gate electrode to the surface of the semiconductor substrate; and using the insulation sidewall layer as the mask and implanting ions into the lightly doped region to form a heavily doped region as the source/drain of a transistor.
TW88111072A 1999-06-30 1999-06-30 Method of producing transistor device using mask layer as the photomask of pocket ion implantation TW429437B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW88111072A TW429437B (en) 1999-06-30 1999-06-30 Method of producing transistor device using mask layer as the photomask of pocket ion implantation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW88111072A TW429437B (en) 1999-06-30 1999-06-30 Method of producing transistor device using mask layer as the photomask of pocket ion implantation

Publications (1)

Publication Number Publication Date
TW429437B true TW429437B (en) 2001-04-11

Family

ID=21641333

Family Applications (1)

Application Number Title Priority Date Filing Date
TW88111072A TW429437B (en) 1999-06-30 1999-06-30 Method of producing transistor device using mask layer as the photomask of pocket ion implantation

Country Status (1)

Country Link
TW (1) TW429437B (en)

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