TW429437B - Method of producing transistor device using mask layer as the photomask of pocket ion implantation - Google Patents
Method of producing transistor device using mask layer as the photomask of pocket ion implantationInfo
- Publication number
- TW429437B TW429437B TW88111072A TW88111072A TW429437B TW 429437 B TW429437 B TW 429437B TW 88111072 A TW88111072 A TW 88111072A TW 88111072 A TW88111072 A TW 88111072A TW 429437 B TW429437 B TW 429437B
- Authority
- TW
- Taiwan
- Prior art keywords
- mask layer
- mask
- gate electrode
- layer
- ion implantation
- Prior art date
Links
Abstract
The present invention provides a method of producing a transistor device using a mask layer as the mask of a pocket ion implantation, which comprises: sequentially forming a conductive layer and a mask layer on the surface of a semiconductor substrate; defining a pattern of the mask layer and the conductive layer to form a gate electrode; using the mask layer as a mask to implant ions into a region in the semiconductor substrate below the gate electrode thereby forming a pocket ion implantation region; removing the mask layer and oxidizing the gate electrode; forming a lightly doped region on both sides below the gate electrode; forming an insulation sidewall layer on the sidewall of the gate electrode to the surface of the semiconductor substrate; and using the insulation sidewall layer as the mask and implanting ions into the lightly doped region to form a heavily doped region as the source/drain of a transistor.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW88111072A TW429437B (en) | 1999-06-30 | 1999-06-30 | Method of producing transistor device using mask layer as the photomask of pocket ion implantation |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW88111072A TW429437B (en) | 1999-06-30 | 1999-06-30 | Method of producing transistor device using mask layer as the photomask of pocket ion implantation |
Publications (1)
Publication Number | Publication Date |
---|---|
TW429437B true TW429437B (en) | 2001-04-11 |
Family
ID=21641333
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW88111072A TW429437B (en) | 1999-06-30 | 1999-06-30 | Method of producing transistor device using mask layer as the photomask of pocket ion implantation |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW429437B (en) |
-
1999
- 1999-06-30 TW TW88111072A patent/TW429437B/en not_active IP Right Cessation
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Legal Events
Date | Code | Title | Description |
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GD4A | Issue of patent certificate for granted invention patent | ||
MK4A | Expiration of patent term of an invention patent |