KR970077364A - Semiconductor device manufacturing method - Google Patents

Semiconductor device manufacturing method Download PDF

Info

Publication number
KR970077364A
KR970077364A KR1019960017609A KR19960017609A KR970077364A KR 970077364 A KR970077364 A KR 970077364A KR 1019960017609 A KR1019960017609 A KR 1019960017609A KR 19960017609 A KR19960017609 A KR 19960017609A KR 970077364 A KR970077364 A KR 970077364A
Authority
KR
South Korea
Prior art keywords
semiconductor device
device manufacturing
gate electrode
forming
spacer
Prior art date
Application number
KR1019960017609A
Other languages
Korean (ko)
Inventor
고석윤
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019960017609A priority Critical patent/KR970077364A/en
Publication of KR970077364A publication Critical patent/KR970077364A/en

Links

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

본 발명은 게이트 전극의 측벽에 형성된 스페이서막을 이용하지 않고 LDD 구조의 소오스 및 드레인 영역을 형성하므로써, 스페이서층의 공정 과정을 생략할 수 있고, 스페이서 형성 과정에서 발생되는 파티클을 감소시킬 수 있으며, 핫 캐리어 영향을 감소시킬 수 있는 반도체 소자 제조 방법이 개시된다.In the present invention, the source and drain regions of the LDD structure are formed without using the spacer film formed on the sidewall of the gate electrode, the process of the spacer layer can be omitted, particles generated during the spacer formation process can be reduced, A semiconductor device manufacturing method capable of reducing a carrier effect is disclosed.

Description

반도체 소자 제조 방법Semiconductor device manufacturing method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

제2a도 내지 제2d도는 본 발명에 따른 반도체 소자 제조 방법을 설명하기 위한 단면도.FIGS. 2a to 2d are cross-sectional views for explaining a method of manufacturing a semiconductor device according to the present invention;

Claims (1)

반도체 소자 제조 방법에 있어서, 실리콘 기판상에 게이트 산화막 및 폴리 실리콘층을 형성하는 단계와, 상기 폴리 실리콘층 및 게이트 산화막을 순차적으로 패터닝하여 게이트 전극을 형성하는 단계와, 상기 전체 구조 상부에 아세닉(As) 이온을 주입하여 제1접합 영역을 형성하는 단계와, 상기 게이트 전극의 양 측부를 패터닝하는 단계와, 상기 전체 구조 상부에 인(P) 이온을 주입하여 제2접합 영역을 형성하는 단계로 이루어지는 것을 특징으로 하는 반도체 소자 제조 방법.A method of manufacturing a semiconductor device, comprising: forming a gate oxide film and a polysilicon layer on a silicon substrate; sequentially forming a gate electrode by patterning the polysilicon layer and a gate oxide film; Forming a second junction region by implanting phosphorous (P) ions into the upper portion of the entire structure; implanting phosphorous (As) ions to form a first junction region; patterning both side portions of the gate electrode; ≪ / RTI > ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: It is disclosed by the contents of the first application.
KR1019960017609A 1996-05-23 1996-05-23 Semiconductor device manufacturing method KR970077364A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960017609A KR970077364A (en) 1996-05-23 1996-05-23 Semiconductor device manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960017609A KR970077364A (en) 1996-05-23 1996-05-23 Semiconductor device manufacturing method

Publications (1)

Publication Number Publication Date
KR970077364A true KR970077364A (en) 1997-12-12

Family

ID=66219819

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960017609A KR970077364A (en) 1996-05-23 1996-05-23 Semiconductor device manufacturing method

Country Status (1)

Country Link
KR (1) KR970077364A (en)

Similar Documents

Publication Publication Date Title
KR940020594A (en) Method of manufacturing a semiconductor device having a silicon on insulator (SOI) structure
KR930001477A (en) Manufacturing method of mospat
KR960012564A (en) Thin film transistor and method of forming the same
EP0827205A3 (en) Method for manufacturing a semiconductor device
KR970063780A (en) Transistor manufacturing method
KR970077364A (en) Semiconductor device manufacturing method
KR980005882A (en) MOS transistor and its manufacturing method
KR980005881A (en) Method of manufacturing semiconductor device
KR970054438A (en) Power MOS device having an inclined gate oxide film and method of manufacturing same
KR940001460A (en) LDD manufacturing method of semiconductor device
KR950004612A (en) MOS transistor manufacturing method with low concentration drain (LDD) region
KR970054256A (en) Thin film transistor and method of manufacturing the same
KR950021269A (en) Source / Drain Formation Method of Semiconductor Device
KR970077366A (en) Method of manufacturing high-voltage transistor
KR960026558A (en) Device Separating Method of Semiconductor Device
KR970054448A (en) Manufacturing method of semiconductor device
KR950030387A (en) Transistor and manufacturing method
KR980006536A (en) Method of manufacturing semiconductor device
KR970072477A (en) Morse transistor structure and manufacturing method
KR930017207A (en) MOSFET manufacturing method
KR930018687A (en) Semiconductor device manufacturing method
KR950012645A (en) Method of manufacturing thin film transistor of semiconductor device
KR970003940A (en) Transistor manufacturing method of semiconductor device
KR930005243A (en) Structure and manufacturing method of transistor using shallow junction
KR970060509A (en) Method of manufacturing semiconductor device

Legal Events

Date Code Title Description
WITN Withdrawal due to no request for examination